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PD - 91671B
TO-220AB
IRFZ44E
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
R
DS(on)
V
DSS
= 60V
= 0.023Ω
ID = 48A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 192
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 220 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFZ44E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 – –– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.063 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.023 Ω VGS = 10V, ID = 29A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 15 ––– ––– S VDS = 30V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 60 ID = 29A
Gate-to-Source Charge ––– ––– 13 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 30V
Rise Time ––– 60 ––– ID = 29A
Turn-Off Delay Time ––– 70 ––– RG = 15Ω
ns
Fall Time ––– 70 ––– RD = 1.1Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1360 ––– VGS = 0V
Output Capacitance ––– 420 ––– VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
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Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
48
192
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 29A
Reverse Recovery Charge ––– 177 266 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 29A, di/dt ≤ 320A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25°C, L = 520µH
J
= 29A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
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IRFZ44E
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
48A
°
T = 25 C
J
100
T = 175 C
J
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFZ44E
2500
2000
1500
1000
V
=
0V,
GS
C
=
C
iss gs gd , ds
C
=
C
rss gd
C
=
C
oss ds gd
C
iss
C
oss
f = 1MHz
+ C
+ C
C SHORTED
C, Capacitance (pF)
C
500
0
rss
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I =
29
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
V = 48V
DS
V = 30V
DS
FOR TEST CIRCUIT
SEE FIGURE
DS(on)
13
100
T = 175 C
10
SD
I , Reverse Drain Current (A)
1
0.5 1.0 1.5 2.0 2.5
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
°
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
Forward Voltage
Forward Voltage
V = 0 V
GS
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
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50
40
30
50
40
30
V
V
DS
DS
V
V
GS
GS
R
R
G
G
10V
10V
Pulse Width ≤ 1 µs
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Duty Factor ≤ 0.1 %
IRFZ44E
R
D
D.U.T.
D.U.T.
+
V
DD
-
20
20
D
I , Drain Current (A)
D
I , Drain Current (A)
10
10
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
10
T , Case Temperature ( C)
C
T , Case Temperature ( C)
C
Case Temperature
Case Temperature
°
°
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
t
t
d(off)tf
d(off)tf
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ44E
A
15V
DRIVER
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
500
TOP
I
D
12A
21A
400
+
V
DD
-
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature( C)
J
BOTTOM
29A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
.3µF
10 V
Q
GS
V
G
Fig 13a. Basic Gate Charge Waveform
Q
GD
Charge
V
GS
3mA
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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D.U.T.
I
G
I
D
+
V
DS
-
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IRFZ44E
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRFZ44E
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN
0.93 (.037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CON TR O LL ING D IME N S IO N : INC H 4 H E ATS INK & L E A D M E A S U R E M E N T S DO N OT INCLUDE BURRS.
2X
0.69 (.027)
0.36 (.014) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1 M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 7/99
8 www.irf.com
INT ER NA TIONA L
R E C T IF IE R
LOG O
AS SEMBLY
LOT CODE
IRF1010
9246
9B 1M
PART NUMBER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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