Page 1
INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRFZ44CN
FEATURES
·Drain Current –ID=49A@ T
·Drain Source Voltage-
: V
= 55V(Min)
DSS
·Static Drain-Source On-Resistance
: R
= 0.032Ω(Max)
DS(on)
·Fast Switching
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃
C
=25℃)
a
V
DSS
V
GS
I
D
I
DM
P
D
T
J
T
stg
Drain-Source Voltage 55 V
Gate-Source Voltage-Continuous ±20 V
Drain Current-Continuous 49 A
Drain Current-Single Pluse (tp≤10μs)
Total Dissipation @TC=25℃ 94 W
Max. Operating Junction T emperature 175 ℃
Storage Temperature -55~175 ℃
160 A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
R
th j-c
th j-a
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient 62
℃/W
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRFZ44CN
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
·
V
(BR)DSS
V
GS
R
DS(on)
I
I
V
GSS
DSS
SD
Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 V
Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V
)
(th
Drain-Source On-Resistance VGS= 10V; ID= 25A 0.032 Ω
Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA
Zero Gate Voltage Drain Current
DS
V
= 55V; VGS=0; Tj= 150℃
DS
25
250
μA
= 55V; VGS=0
V
Forward On-Voltage IS= 25A; VGS=0 1.3 V
isc Website：www.iscsemi.cn
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