Datasheet irfz34vs Datasheet

PD - 94180

IRFZ34VS

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34VL) is available for lowprofile application.

HEXFET® Power MOSFET

D

G

S

D2Pak

IRFZ34VS

IRFZ34VL

V

= 60V

DSS

R

DS(on)

ID = 30A

IRFZ34VL

= 28mΩ

TO-262

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A I

DM

PD @TC = 25°C Power Dissipation 70 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  4.5 V/ns T

J

T

STG

Pulsed Drain Current  120

Linear Derating Factor 0.46 W/°C Gate-to-Source Voltage ± 20 V Avalanche Current 30 A Repetitive Avalanche Energy 7.0 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

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Junction-to-Case ––– 2.15 Junction-to-Ambient (PCB Mounted)** ––– 40 °C/W

02/14/02

IRFZ34VS/IRFZ34VL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 28 mΩ VGS = 10V, ID = 18A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 15 ––– ––– SVDS = 25V, ID = 18A

Drain-to-Source Leakage Current

––– ––– 25 ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 60V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 49 ID = 30A Gate-to-Source Charge ––– ––– 12 nC VDS = 48V Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = 10V, See Fig. 6 and 13  Turn-On Delay Time ––– 10 ––– VDD = 30V Rise Time ––– 65 ––– ID = 30A Turn-Off Delay Time ––– 31 ––– RG = 12Ω

ns

Fall Time ––– 40 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 1120 ––– VGS = 0V Output Capacitance ––– 250 ––– VDS = 25V Reverse Transfer Capacitance ––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5  Single Pulse Avalanche Energy ––– 260 81 mJ

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––

30

120

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V  Reverse Recovery Time ––– 70 110 ns TJ = 25°C, IF = 30A Reverse Recovery Charge ––– 99 150 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

= 25°C, L = 180µH

J

= 30A. (See Figure 12)

AS

≤ 30A, di/dt ≤ 250A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Uses IRFZ34V data and test conditions.

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

,

For recommended footprint and soldering techniques refer to

application note #AN-994.

2 www.irf.com

D

S

IRFZ34VS/IRFZ34VL

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.5

30A

I =



D

3.0

°

T = 25 C



J

100

T = 175 C



J

10

D

I , Drain-to-Source Current (A)

V = 50V

DS



1

4 5 6 7 8 9 10 11

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

Vs. Temperature

www.irf.com 3

IRFZ34VS/IRFZ34VL

)

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C + C

C



C

iss



oss



rss

C SHORTED C C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

30A

D



V = 48V

DS

V = 30V

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50

Q , Total Gate Charge (nC)

G

DS



V = 12V

DS

FOR TEST CIRCUIT



SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED



BY R

DS(on

13

100

°

T = 175 C



J

10

°

T = 25 C



J

1

SD

I , Reverse Drain Current (A)

V = 0 V



0.1

0.0 0.4 0.8 1.2 1.6 2.0

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100

10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C



Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS



10us



100us



1ms



10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRFZ34VS/IRFZ34VL

30

25

20

15

10

D

I , Drain Current (A)

5

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

thJC

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE



(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFZ34VS/IRFZ34VL

A

15V

DRIVER

R

V

G

20V

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

160

TOP



120

+

V

DD

-

80

40

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

I

°

D 12A 21A 30A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

12V

.2µF

.3µF

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

V

GS

3mA

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

D.U.T.

I

G

I

D

6 www.irf.com

+

V

DS

-

IRFZ34VS/IRFZ34VL

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

G

• D.U.T. - Device Under Test

+

V

DD

-

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

www.irf.com 7

IRFZ34VS/IRFZ34VL

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055) MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIMENSIONS AFTER SOLDER DIP . 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.0 1 0) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNM E N TS 1 - G A TE 2 - D RA IN 3 - SOURCE

10.16 (.400) REF .

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF .

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INT ERNATIONAL RE CTIFIE R LO G O

A S SEMBLY LO T CO D E

F530S

9246

9 B 1 M

PART NUMB ER

DATE CODE (Y Y W W ) YY = YEAR WW = WEEK

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Package Outline

TO-262 Outline

IRFZ34VS/IRFZ34VL

Part Marking Information

TO-262

www.irf.com 9

IRFZ34VS/IRFZ34VL

)

(

)

Tape & Reel Information

D2Pak

TRR

1.60 (.063

1.50 (.059

4.10 (.1 6 1

3.90 (.1 5 3

1.60 (.06 3

1.50 (.05 9

0.368 (.0145

0.342 (.0135

FEED D IRECTION

1.85 (.0 7 3

1.65 (.0 6 5

TRL

10.90 (.42 9

10.70 (.42 1

FEED DIRECTION

13.50 (.532

12.80 (.504

330.00

14.173

MAX.

NOTES :

1. COM FO R M S TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457

11.40 (.449

16.10 (.634

15.90 (.626

1.75 (.069

1.25 (.049

15.42 (.609

15.22 (.601

27.40 (1.079

23.90 (.9 41

4

26.40 (1.039

24.40 (.961

3

24.30 (.957

23.90 (.941

4.72 (.136

4.52 (.178

60.00 (2.362 MIN.

30.40 (1.197 MAX .

4

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/02

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