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PD - 94042
IRFZ34V
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
D
V
R
DS(on)
= 60V
DSS
= 28mΩ
ID = 30A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
I
DM
PD @TC = 25°C Power Dissipation 70 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 120
Linear Derating Factor 0.46 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 81 mJ
Avalanche Current 30 A
Repetitive Avalanche Energy 7.0 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 2.15
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFZ34V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.062 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 26 mΩ VGS = 10V, ID = 18A
Gate Threshold Voltage 2.0 –– – 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 15 ––– ––– S VDS = 25V, ID = 18A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 4 9 ID = 30A
Gate-to-Source Charge ––– – –– 12 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 10 ––– VDD = 30V
Rise Time ––– 65 ––– ID = 30A
Turn-Off Delay Time ––– 31 ––– RG = 12Ω
ns
Fall Time ––– 40 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1120 ––– VGS = 0V
Output Capacitance ––– 250 ––– VDS = 25V
Reverse Transfer Capacitance ––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
30
120
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V
Reverse Recovery Time ––– 70 110 ns TJ = 25°C, IF = 30A
Reverse Recovery Charge ––– 99 150 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
I
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 180µH
J
= 30A. (See Figure 12)
AS
≤ 30A, di/dt ≤ 250A/µs, V
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
DD
≤ V
(BR)DSS
,
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D
S
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IRFZ34V
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
30A
I =
D
3.0
°
T = 25 C
J
100
T = 175 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4 5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRFZ34V
2000
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
+ C
C
C
C
iss
oss
rss
C SHORTED
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I =
30A
D
V = 48V
DS
V = 30V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
DS
V = 12V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
100
°
T = 175 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.0 0.4 0.8 1.2 1.6 2.0
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFZ34V
30
25
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ34V
A
15V
DRIVER
R
V
G
20V
DS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
160
TOP
120
+
V
DD
-
80
40
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
I
°
D
12A
21A
30A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
.3µF
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
V
GS
3mA
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
D.U.T.
I
G
I
D
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+
V
DS
-
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IRFZ34V
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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Page 8
IRFZ34V
A
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4. 5 M , 1 9 82 . 3 OU T L IN E C O N F O R M S T O JE D E C OU T LIN E T O -2 2 0 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W IT H A SSEMB L Y
LOT CO D E 9B1 M
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERN A TION A L
RE CTIFIER
L OGO
ASSEMBLY
LOT CODE
3X
2.92 (.115)
2.64 (.104)
I RF1010
9246
9B 1 M
0.55 (.022)
0.46 (.018)
PART NUMB ER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 11/00
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