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PD -9.1276C
TO-220AB
IRFZ34N
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 55V
DSS
R
S
DS(on)
I
D
= 0.040Ω
= 29A
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 29
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
I
DM
PD @TC = 25°C Power Dissipation 68 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 100
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 65 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 6.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 2.2
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
°C
8/25/97
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IRFZ34N
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 16A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 V
Total Gate Charge ––– –– – 3 4 ID = 16A
Gate-to-Source Charge –– – ––– 6.8 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.0 ––– VDD = 28V
Rise Time ––– 49 ––– ID = 16A
Turn-Off Delay Time ––– 31 ––– RG = 18Ω
Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Input Capacitance ––– 700 ––– VGS = 0V
Output Capacitance ––– 240 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5
= 25°C (unless otherwise specified)
J
––– ––– 25 V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
µA
nA
= 55V, VGS = 0V
DS
= 20V
GS
= -20V
GS
ns
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 29
––– ––– 100
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 410µH
= 16A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
A
≤ 16 A, di/dt ≤ 420A/µs, V
DD
≤ V
(BR)DSS
D
G
S
)
S+LD
,
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IRFZ34N
1000
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO T T OM 4. 5V
1000
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
4.5V
4.5V
1
D
I , Drain- to-S o urce C u rrent (A )
20µ s PULSE WID TH
T = 25 °C
0.1
0.1 1 10 100
V , Dra in-to-So urc e V olta ge (V )
DS
C
A
1
D
I , Drain-to-Sou rce C urrent (A )
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
V , Drain-to-So urc e V oltag e (V)
DS
C
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100
2.4
I = 26A
D
A
T = 25°C
J
T = 175°C
J
10
D
I , Drain-to-S ource C u rrent (A)
1
45678910
V , Gate-to-Source Voltage (V)
GS
V = 2 5V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.6
1.2
(N o r m a lized)
0.8
0.4
DS(on)
R , Dr ain-to- So u rc e O n R e sistan c e
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em perat u re ( °C )
J
V = 10 V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFZ34N
1200
1000
800
600
400
C, C apac itance (pF)
200
0
1 10 100
V = 0V , f = 1M H z
GS
C = C + C , C S HO RTE D
iss g s gd ds
C = C
rss gd
C = C + C
C
oss ds gd
iss
C
oss
C
rss
V , Dr ain-to-S ou rce V olta ge ( V )
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = 16 A
V , G ate- to -S ou rc e V o ltage (V )
16
12
8
4
GS
D
V = 44 V
DS
V = 28 V
DS
FOR TEST CIRCUIT
A
0
0 10203040
Q , Total Ga te Ch arg e (nC)
G
SEE FIGURE 1 3
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O PERAT ION IN THIS A REA LIM ITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
10
SD
I , Reverse Drain Current (A)
1
0.4 0.8 1.2 1.6 2.0
V , Sour c e-to-D rain Volt a ge (V)
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10µs
10
D
I , Drain Cu rrent (A )
T = 25°C
C
T = 175°C
J
Single Pulse
A
1
1 10 100
V , Drain-to-So urc e Vo ltag e (V)
DS
100µs
1ms
A
Fig 8. Maximum Safe Operating Area
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IRFZ34N
+
-
30
25
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
thJC
D = 0.50
1
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
J DM thJC C
1 2
P
DM
t
1
t
2
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IRFZ34N
D.U.T .
I
AS
L
0.01Ω
+
V
DD
-
R
10 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
140
120
100
80
60
40
20
AS
V = 25 V
E , S ing le P ulse A va lanc he E ne rgy (m J )
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TO P 6.5A
1 1 A
BOTTOM 16A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
A
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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IRFZ34N
+
-
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
Period
P.W.
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
di/dt
Diode Recovery
dv/dt
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
V
DD
I
SD
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IRFZ34N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
1 2 3
4
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
0.93 (.037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB.
2 CONTROLLING D IMENSION : INCH 4 HEATSINK & LEAD MEASURE ME NTS DO NOT INCLUDE BURRS.
2X
0.69 (.027)
0.36 (.014) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH AS S E M B L Y
LOT C ODE 9 B1 M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/9 7
INTERNATIONAL
RE CTIF IER
LO GO
ASSEMBLY
LOT CO D E
IR F1010
9246
9B 1M
PART NUMBER
DATE COD E
(YYW W )
YY = YE A R
WW = W EEK
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
A
Page 9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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