Datasheet IRFZ34N Datasheet (International Rectifier)

PD - _____

PRELIMINARY

HEXFET® Power MOSFET

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

IRFZ34N

V

= 55V

DSS

R

DS(on)

ID = 26A

= 0.040Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 26
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 18 A
I

DM

PD @TC = 25°C Power Dissipation 56 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
T

J

T

STG

Pulsed Drain Current 100

Linear Derating Factor 0.37 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 110 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 5.6 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case –––– –––– 2.7
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62

8/29/95

IRFZ34N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 16A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– ––– 34 ID = 16A
Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.0 ––– VDD = 28V
Rise Time ––– 49 ––– ID = 16A
Turn-Off Delay Time ––– 31 ––– RG = 18Ω

ns

Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 700 ––– VGS = 0V
Output Capacitance ––– 240 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V

DD

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

––– ––– 26

––– ––– 100

Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

SD

TJ ≤ 175°C

= 25V, starting TJ = 25°C, L = 610µH

= 16A. (See Figure 12)

AS

Pulse width ≤ 300µs; duty cycle ≤ 2%.

A

≤ 16 A, di/dt ≤ 420A/µs, V

DD

≤ V

(BR)DSS

,

IRFZ34N

A

A

A

A

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH
T = 25°C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics,

TC = 25oC

100

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTO M 4.5V

100

10

4.5V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 175°C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 2. Typical Output Characteristics,

TC = 175oC

2.4

I = 26A

D

T = 25°C

J

T = 175°C

J

10

D

I , Drain-to-Source Current (A)

1

4 5 6 7 8 9 10

V , Gate-to-Source Voltage (V)

GS

V = 25V

DS

20µs PULSE WIDTH

2.0

1.6

1.2

(Normalized)

0.8

0.4

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

J

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

V = 10V

GS

IRFZ34N

A

A

A

A

1200

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

C

oss ds gd

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I = 16A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

V = 44V

DS

V = 28V

DS

FOR TEST CIRCUIT

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

SEE FIGURE 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

100

T = 175°C

J

T = 25°C

10

SD

I , Reverse Drain Current (A)

1

0.4 0.8 1.2 1.6 2.0

V , Source-to-Drain Voltage (V)

SD

J

V = 0V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

100

10

D

I , Drain Current (A)

T = 25°C

C

T = 175°C

J

Single Pulse

1

1 10 100

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10µs

100µs

1ms

10ms

IRFZ34N

A

R

D.U.T.

D

V

DD

V

DS

V

30

25

GS

R

G

10 V

20

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

15

10

D

I , Drain Current (Amps)

5

0

25 50 75 100 125 150 175

T , Case Temperature (°C)

C

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Case Temperature

10

thJC

D = 0.50

1

0.20

0.10

0.05

0.02

0.1

0.01
SINGLE PULSE

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

(THERMAL RESPONSE)

N otes :

1. D uty fac tor D = t / t

2. P eak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

DM

J

1 2

thJC

P

D M

t

1

C

t

2

A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFZ34N

A

10 V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

250

200

150

100

50

AS

V = 25V

E , Single Pulse Avalanche Energy (mJ)

DD

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( °C)

J

I
TOP 6.5A
11A
BOTTOM 16A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

10 V

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit
Appendix B: Package Outline Mechanical Drawing
Appendix C: Part Marking Information

Appendix A

IRFZ34N

Peak Diode Recovery dv/dt Test Circuit

D.U.T

R

G

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

V

DD

*

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRFZ34N

A

Package Outline

Appendix B

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN

0.55 (.022)

3X

0.46 (.018)

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M

INTERNATIONAL
RECTIFIER
LOGO

ASSEMBLY
LOT CODE

IRF1010

9246

9B 1M

Appendix C

PART NUMBER

DATE CODE
(YYWW)
YY = YEAR
WW = WEEK