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PD - 9.1672A
TO-220AB
IRFZ34E
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 60V
DSS
R
S
DS(on)
ID = 28A
= 0.042Ω
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 28
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
I
DM
PD @TC = 25°C Power Dissipation 68 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 112
Linear Derating Factor 0.46 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 97 mJ
Avalanche Current 17 A
Repetitive Avalanche Energy 6.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 2.2
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
°C
11/4/97
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IRFZ34E
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.042 Ω VGS = 10V, ID = 17A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 7.6 ––– ––– S VDS = 25V, ID = 17A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Total Gate Charge ––– ––– 30 ID = 17A
Gate-to-Source Charge ––– ––– 6.7 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 12 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 5.1 ––– VDD = 30V
Rise Time ––– 30 ––– ID = 17A
Turn-Off Delay Time ––– 22 ––– RG = 13Ω
Fall Time ––– 30 ––– RD = 1.8Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7. 5 –––
Input Capacitance ––– 680 ––– VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 80 ––– ƒ = 1.0MHz, See Fig. 5
= 25°C (unless otherwise specified)
J
––– ––– 25 VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
µA
nA
ns
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 28
––– ––– 100
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 17A, VGS = 0V
Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 17A
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25°C, L = 670µH
J
= 17A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
A
≤ 17 A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
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IRFZ34E
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
°
T = 25 C
J
T = 175 C
J
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 175 C
°
J
Fig 2. Typical Output Characteristics
2.5
°
2.0
I =
D
28A
10
1
D
I , Drain-to-Source Current (A)
V = 25V
DS
0.1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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IRFZ34E
1200
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I =
17 A
D
V = 48V
DS
V = 30V
15
10
5
GS
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
100
T = 150 C
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
°
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRFZ34E
)
30
25
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ34E
D.U.T .
I
AS
L
0.01Ω
+
V
DD
-
R
10 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
200
TOP
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
6.9A
12A
17A
°
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same T ype as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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IRFZ34E
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
di/dt
Diode Recovery
dv/dt
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
V
DD
I
SD
Page 8
IRFZ34E
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
1 2 3
4
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - G AT E
2 - D RA IN
3 - S OUR CE
4 - D RA IN
0.93 (.037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIME N S IONING & TOLERANCING PER AN SI Y14.5M, 1982. 3 O UTLINE CONF OR M S TO JEDE C O UT LINE TO-220-AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (.027)
0.36 (.01 4 ) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF 1010
W IT H AS SEMBL Y
LOT C ODE 9 B 1M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
INTER NATIONAL
RECTIFIER
LOG O
ASSEMBLY
LO T C O D E
IRF1010
9246
9B 1M
PART NUMBER
DATE CODE
(YYWW)
YY = YEA R
WW = WEEK
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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