Page 1
PD - 94182
IRFZ24VS
IRFZ24VL
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TC = 25°C Power Dissipation 44 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.2 V/ns
T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 0.29 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 17 A
Repetitive Avalanche Energy 4.4 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
S
D2Pak
IRFZ24VS
V
R
DS(on)
= 60V
DSS
= 60mΩ
ID = 17A
TO-262
IRFZ24VL
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
www.irf.com 1
Junction-to-Case ––– 3.4
Junction-to-Ambient (PCB Mounted)** ––– 40
°C/W
02/14/02
Page 2
IRFZ24VS/IRFZ24VL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 60 mΩ VGS = 10V, ID = 10A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 7.8 ––– ––– SVDS = 25V, ID = 10A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 23 ID = 17A
Gate-to-Source Charge ––– ––– 7.7 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 6.2 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.6 ––– VDD = 30V
Rise Time ––– 46 ––– ID = 17A
Turn-Off Delay Time ––– 21 ––– RG = 18Ω
ns
Fall Time ––– 24 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 590 ––– VGS = 0V
Output Capacitance ––– 140 ––– VDS = 25V
Reverse Transfer Capacitance ––– 23 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 140 43 mJ I
= 17A, L = 300µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
17
68
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 17A, VGS = 0V
Reverse Recovery Time ––– 53 79 ns TJ = 25°C, IF = 17A
Reverse Recovery Charge ––– 90 130 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 300µH
J
= 17A, VGS=10V (See Figure 12)
AS
≤ 17A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
,
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
Uses IRFZ24V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
2 www.irf.com
D
S
Page 3
IRFZ24VS/IRFZ24VL
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
T = 175 C
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
°
2.0
17A
I =
D
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
www.irf.com 3
Page 4
IRFZ24VS/IRFZ24VL
1000
800
Ciss
600
Coss
400
C, Capacitance(pF)
200
Crss
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 175 C
J
10
SHORTED
ds
20
I =
17A
D
V = 48V
DS
V = 30V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20 24
Q , Total Gate Charge (nC)
G
DS
V = 12V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
4 www.irf.com
Page 5
IRFZ24VS/IRFZ24VL
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
P
DM
t
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
Page 6
IRFZ24VS/IRFZ24VL
A
15V
DRIVER
+
-
V
DD
R
V
20V
V
DS
G
GS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
80
TOP
60
40
20
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
I
D
6.9A
12A
17A
°
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
6 www.irf.com
+
V
DS
-
Page 7
IRFZ24VS/IRFZ24VL
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
www.irf.com 7
Page 8
IRFZ24VS/IRFZ24VL
A
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MA X.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP .
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
2
D
Pak Part Marking Information
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.0 1 0) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNM E N TS
1 - G A TE
2 - D RA IN
3 - SOURCE
10.16 (.400)
REF .
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF .
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIE R
LO G O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1 M
PART NUMB ER
DATE CODE
(Y Y W W)
YY = YEAR
WW = WEEK
8 www.irf.com
Page 9
TO-262 Package Outline
IRFZ24VS/IRFZ24VL
TO-262 Part Mar king Information
www.irf.com 9
Page 10
IRFZ24VS/IRFZ24VL
D2Pak Tape & Reel Information
TRR
4.10 (.161)
3.90 (.153)
FEED DIRECTION
TRL
FEED DIRECTION
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.60 (.063)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609 )
15.22 (.601 )
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MA X.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
27.40 (1.079)
23.90 (.941)
4
26.40 (1.03 9 )
24.40 (.961)
3
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/02
10 www.irf.com
Loading...