Page 1
HEXFET® Power MOSFET
PD - 91354A
IRFZ24N
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET
®
power MOSFETs from
G
D
V
= 55V
DSS
R
S
DS(on)
ID = 17A
= 0.07Ω
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TC = 25°C Power Dissipation 45 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 71 mJ
Avalanche Current 10 A
Repetitive Avalanche Energy 4.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 3.3
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
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IRFZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω VGS = 10V, ID = 10A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.5 ––– – –– S VDS = 25V, ID = 10A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
µA
nA
Total Gate Charge ––– –– – 20 ID = 10A
Gate-to-Source Charge ––– ––– 5.3 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 7. 6 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.9 ––– VDD = 28V
Rise Time ––– 34 ––– ID = 10A
Turn-Off Delay Time ––– 19 ––– RG = 24Ω
ns
Fall Time ––– 27 ––– RD = 2.6Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
–––
–––
4.5
7.5
–––
–––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 370 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 65 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 17
A
––– ––– 68
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 10A, VGS = 0V
Reverse Recovery Time ––– 56 83 ns TJ = 25°C, IF = 10A
Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 1.0mH
DD
RG = 25Ω, I
= 10A. (See Figure 12)
AS
I
≤ 10A, di/dt ≤ 280A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
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D
S
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IRFZ24N
)
A
)
A
)
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
D
I , Drain-to-Source Current (A )
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 100
V , Dra in -to - S o ur c e Vo ltage (V
DS
C
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
100
VGS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A )
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in -to -S o u r ce V o ltage (V
DS
C
Fig 2. Typical Output Characteristics,
TJ = 175oC
3.0
I = 17 A
D
2.5
T = 25°C
J
T = 175°C
J
10
D
I , D ra in-to- So urc e C urre n t (A)
1
45678910
V , Gate -to-S o urce Vo ltage (V
GS
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(N ormalized )
1.0
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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IRFZ24N
)
A
g
g
g
)
A
A
)
A
g
700
600
500
400
300
C, Capacitance (pF)
200
100
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C S H O RT E D
is s
C = C
C = C + C
C
iss
C
oss
C
rss
V , Dra in -to -S o u rce V o ltage (V
DS
s gd d s
d
rss
oss ds
d
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 1 0A
V , Ga te -to-So u rc e V o lta ge (V)
16
12
GS
D
8
4
V = 44 V
DS
V = 28 V
DS
FOR TEST CIRCUIT
0
048121620
Q , T ota l G a te C h arge (nC
G
SE E F IG U RE 1 3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ERA T IO N IN T H IS A R E A L IMITED
BY R
DS(on)
T = 175°C
J
T = 25 °C
J
10
SD
I , Re ve r se D r ain Cur ren t (A )
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
GS
100
10
D
I , Drain Current (A)
T = 25 °C
C
T = 17 5 °C
J
Sin
le Pu l s e
1
1 10 100
V , Dra in -to -S ou rc e V o ltage (V
DS
Fig 8. Maximum Safe Operating Area
10µs
100µs
1ms
10ms
Forward Voltage
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20
A
)
(
)
16
12
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRFZ24N
R
D
D.U.T.
+
V
DD
-
8
D
I , D ra in C u rre n t (A mps )
4
0
25 50 75 100 125 150 175
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.1
Thermal Res ponse (Z )
0.01
0.01
S IN GLE PU L S E
THERMAL RESPONSE
No t e s :
1. Duty factor D = t / t
2. Pea k T = P x Z + T
0.00001 0.0001 0.001 0.01 0.1 1
t , Rec tangular Pulse Duration (sec
1
J
DM
P
12
thJC
DM
t
1
t
2
C
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ24N
A
)
D.U.T .
I
AS
L
0.01Ω
+
V
DD
-
R
10 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
140
120
100
80
60
40
20
AS
V = 25 V
E , S ing le Pu ls e Ava la n ch e E n erg y ( mJ )
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
I
TO P 4.2A
7.2A
BOTTOM 1 0A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
D
50KΩ
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
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DS
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Peak Diode Recovery dv/dt Test Circuit
IRFZ24N
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
-
VGS=10V
V
DD
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® power MOSFETs
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IRFZ24N
A
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
4
1 2 3
6.47 (.255)
6.10 (.240)
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNM ENTS
1 - GA T E
2 - DR A IN
3 - SO U RC E
4 - DR A IN
0.93 (.037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 . 5 M , 1 9 8 2 . 3 OU T LIN E C O N F O R M S T O J E D E C OU T L IN E T O - 2 20 - A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (.027)
0.36 (.01 4) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W ITH A SS EMB LY
LOT CO DE 9B1M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 9/99
8 www.irf.com
INTERN A TION A L
RE CTIFIER
L OGO
ASSEMBLY
LOT C OD E
I RF1010
9246
9B 1M
PART NUMB ER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Page 9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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