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POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on) ID Eyelets
IRFY430C 1.5 Ω 4.5A Ceramic
IRFY430CM 1.5 Ω 4.5A Ceramic
IRFY430C,IRFY430CM
500V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
PD - 91291C
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature
stability . They are well-suited f or applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
®
MOSFET technology is the key to International
TO-257AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
n Ideally Suited For Space Level
Applications
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 4.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 2.8
I
DM
PD @ TC = 25°C Max. Power Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 3.5
T
J
T
STG
Pulsed Drain Current ➀ 18
Linear Derating Factor 0.6 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 280 mJ
Avalanche Current ➀ 4.5 A
Repetitive Avalanche Energy ➀ 7.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300(0.063in./1.6mm from case for 10 sec)
Weight 4.3 (Typical) g
A
V/ns
o
C
For footnotes refer to the last page
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4/18/01
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IRFY430C, IRFY430CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Mi n T y p Max Uni ts T es t Co nd itions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
C
iss
C
oss
C
rss
DSS
D
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 1.5 Ω VGS = 10V, ID = 2.8A
Resistance
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.5 — — S ( )VDS > 15V, IDS = 2.8A ➃
Zero Gate Voltage Drain Current — — 25 VDS= 400V ,VGS=0V
— — 250 VDS = 400V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 29.5 VGS =10V, ID = 4.5A
Gate-to-Source Charge — — 4.6 nC VDS = 250V
Gate-to-Drain (‘Miller’) Charge — — 19.7
Turn-On Delay Time — — 35 VDD = 250V, ID = 4.5A,
Rise Time — — 30 RG = 7.5Ω
Turn-Off Delay Time — — 55
Fall Time — — 30
Total Inductance — 6.8 —
Input Capacitance — 650 — VGS = 0V, VDS = 25V
Output Capacitance — 135 — pF f = 1.0MHz
Reverse Transfer Capacitance — 65 —
Ω
µA
nA
ns
Measured from drain lead (6mm/0.25in. from
nH
package) to source lead (6mm/0.25in. from
package)
➃
VGS = 0V, TJ = 125°C
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
I
Continuous Source Current (Body Diode) — — 4.5
S
I
Pulse Source Current (Body Diode) ➀ —— 18
SM
V
Diode Forward Voltage — — 1. 4 V Tj = 25°C, IS = 4.5A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 900 nS Tj = 25°C, IF = 4.5A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 7.0 µC VDD ≤ 50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thCS
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 1.67
Case-to-sink — 0.21 —
Junction-to-Ambient — — 80 Typical socket mount
°C/W
+ LD.
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IRFY430C, IRFY430CM
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFY430C, IRFY430CM
3
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFY430C, IRFY430CM
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFY430C, IRFY430CM
A
15V
DRIVER
+
-
R
G
20V
1
V
DS
t
L
D.U.T
.
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )DS S
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
0
.3µF
D.U.T.
+
V
DS
-
V
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
GS
3mA
I
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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I
D
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Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 50V, starting TJ = 25°C, L= 28mH
DD
Peak IL = 4.5A, VGS = 10V
➂ I
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — TO-257AA
IRFY430C, IRFY430CM
≤ 4.5A, di/dt ≤ 75A/µs,
SD
VDD ≤ 500V, TJ ≤ 150°C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
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