Page 1
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S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 50
R
()V
DS(on)
Q
(Max.) (nC) 14
g
Q
(nC) 6.5
gs
Q
(nC) 6.5
gd
Configuration Single
= - 10 V 0.28
GS
FEATURES
• Surface Mountable (Order As IRFR9020,
SiHFR9020)
• Straight Lead Option (Order As IRFU9020,
SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of power
MOSFET’s to high volume applications where PC board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9020-GE3 SiHFR9020TR-GE3
Lead (Pb)-free
IRFR9020PbF IRFR9020TRPbF
SiHFR9020-E3 SiHFR9020T-E3
Note
a. See device orientation.
a
a
a
SiHFR9020TRL-GE3aSiHFU9020-GE3
IRFR9020TRLPbF
SiHFR9020TL-E3
a
a
IRFU9020PbF
SiHFU9020-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
= 100 °C - 6.3
C
DS
± 20
GS
I
D
IDM - 40
Linear Derating Factor 0.33 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 5.8 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
= - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A
b. V
DD
c. I
- 9.9 A, dI/dt -120 A/μs, VDD 40 V, TJ 150 °C.
SD
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0169-Rev. D, 04-Feb-13
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 50
- 9.9
250 mJ
- 9.9 A
4.2 mJ
42 W
- 55 to + 150
Document Number: 90350
V
AT
°C
Page 2
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
- - 110
-1.7-
--3.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
oss
rss
g
gs
gd
d(on)
r
d(off)
-2538
f
D
S
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V ID = 5.7 A
-320-
-70-
-4.36.5
V
-4.36.5
-1218
VGS = 0 V, ID = - 250 μA - 50 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = max. rating, VGS = 0 V - - 250
b
VDS - 50 V, IDS = - 5.7 A 2.3 3.5 - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 9
= - 9.7 A, VDS = 0.8 x max.
I
D
= - 10 V
GS
rating, see fig. 18
(Independent operating
temperature)
= - 25 V, ID = - 9.7 A,
V
DD
R
= 18 , RD = 2.4 , see fig. 17
g
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
Vishay Siliconix
°C/WCase-to-Sink R
- - 1000
- 0.20 0.28
-490-
-9.414
-8.212
-5766
-4.5-
-7.5-
μA
pFOutput Capacitance C
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = - 9.9 A, VGS = 0 V
b
TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/μs
--- 9.9
--- 40
--- 6.3V
56 110 280 ns
b
0.17 0.34 0.85 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. Pulse width 300 μs; duty cycle 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [email protected]
S13-0169-Rev. D, 04-Feb-13
2
Document Number: 90350
Page 3
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 3 - Typical Saturation Characteristics
S13-0169-Rev. D, 04-Feb-13
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Document Number: 90350
Page 4
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 8 - Normalized On-Resistance vs. Temperature
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0169-Rev. D, 04-Feb-13
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 90350
Page 5
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I
AS
V
DS
V
DD
V
DS
t
p
I
L
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 13 - Maximum Avalanche vs. Starting Junction
Temperature
Fig. 14 - Unclamped Inductive Test Circuit
Fig. 15 - Unclamped Inductive Waveforms
S13-0169-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions, contact: [email protected]
5
Document Number: 90350
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 6
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
www.vishay.com
Fig. 16 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Vishay Siliconix
Fig. 17 - Switching Time Waveforms
Fig. 19 - Basic Gate Charge Waveform
Fig. 18 - Switching Time Test Circuit
S13-0169-Rev. D, 04-Feb-13
6
For technical questions, contact: [email protected]
Fig. 20 - Gate Charge Test Circuit
Document Number: 90350
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 7
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
P.W.
Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D =
P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by R
g
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
• Compliment N-Channel of D.U.T. for driver
V
DD
• I
SD
controlled by duty factor “D”
Note
Note
a. V
GS
= - 5 V for logic level and - 3 V drive devices
V
GS
= - 10 V
a
D.U.T. lSD waveform
D.U.T. V
DS
waveform
V
DD
Re-applied
voltage
Ripple ≤ 5 %
I
SD
Reverse
recovery
current
www.vishay.com
Vishay Siliconix
Fig. 21 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90350
S13-0169-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
.
7
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 90350
Page 8
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Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
L3
A
C2
DIM. MIN. MAX. MIN. MAX.
MILLIMETERS INCHES
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
D
H
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
L4
L5
L
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
b
e1
b2
e
C
A1
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
gage plane height (0.5 mm)
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
D1
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T16-0236-Rev. P, 16-May-16
E1
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
1
Document Number: 71197
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 9
TO-251AA (HIGH VOLTAGE)
Package Information
Vishay Siliconix
4
E1
View A - A
Thermal PAD
D1
4
(Datum A)
3
E
b4
θ2
5
C
L3
L1
B
B
2 x e
Lead tip
A
4
L2
D
C
L
3 x b2
3 x b
0.010 C BMA
0.010 BA
B
3
M
0.25
C
4
0.25
Plating
(c)
Section B - B and C - C
5
b1, b3
(b, b2)
Base
metal
c1
A
c2
θ1
5
A
C
Seating
plane
A
A1
c
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -
A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265
b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -
b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC
b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380
b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090
b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050
c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060
c1 0.41 0.56 0.016 0.022 θ1 0' 15' 0' 15'
c2 0.46 0.86 0.018 0.034 θ2 25' 35' 25' 35'
D 5.97 6.22 0.235 0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362 www.vishay.com
Revision: 15-Sep-08 1
Page 10
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
Application Note 826
Vishay Siliconix
0.243
(6.180)
Return to Index
Return to Index
0.420
(10.668)
0.180
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.087
0.090
0.055
(1.397)
(2.202)
(2.286)
APPLICATION NOTE
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
Page 11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
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Revision: 13-Jun-16
1
Document Number: 91000
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