Page 1
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S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 50
R
()V
DS(on)
Q
(Max.) (nC) 9.1
g
Q
(nC) 3.0
gs
Q
(nC) 5.9
gd
Configuration Single
= - 10 V 0.50
GS
FEATURES
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9010-GE3 SiHFR9010TR-GE3
Lead (Pb)-free
IRFR9010PbF IRFR9010TRPbF
SiHFR9010-E3 SiHFR9010T-E3
Note
a. See device orientation.
a
a
a
SiHFR9010TRL-GE3aSiHFU9010-GE3
IRFR9010TRLPbF
SiHFR9010TL-E3
a
a
IRFU9010PbF
SiHFU9010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
= 100 °C - 3.3
C
DS
± 20
GS
I
D
IDM - 21
Linear Derating Factor 0.20 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
= - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.
DD
- 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 .
c. I
SD
d. 0.063" (1.6 mm) from case.
S13-0167-Rev. D, 04-Feb-13
d
for 10 s 300
1
E
AS
I
AR
E
AR
D
dV/dt 5.8 V/ns
, T
J
stg
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 50
- 5.3
136 mJ
- 5.3 A
2.5 mJ
25 W
- 55 to + 150
Document Number: 91378
V
AT
°C
Page 2
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain)
a
thJA
thCS
R
thJC
- - 110
-1.7-
--5.0
Note
a. Mounting pad must cover heatsink surface area.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
DS(on)
fs
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V ID = - 2.8 A
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-160-
oss
-30-
rss
g
V
-2.03.0
gs
-3.95.9
gd
d(on)
r
-1320
d(off)
-3559
f
D
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
TJ = 25 °C, IF = - 4,7 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = - 250 μA - 50 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = max. rating, VGS = 0 V - - - 250
b
VDS - 50 V, IDS = - 2.8 A 1.1 1.7 - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 9
= - 4.7 A, VDS = 0.8 x max.
I
D
= - 10 V
GS
rating, see fig. 16
(Independent operating
temperature)
= - 25 V, ID = - 4.7 A,
V
DD
R
= 24 , RD = 5.6 , see fig. 15
g
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = - 5.3 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WCase-to-Sink R
- - - 1000
- 0.35 0.5
-240-
-6.19.1
-6.19.2
-4771
-4.5-
-7.5-
--- 5.3
--- 18
--- 5.5V
33 75 160 ns
0.090 0.22 0.52 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [email protected]
S13-0167-Rev. D, 04-Feb-13
2
Document Number: 91378
Page 3
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 3 - Typical Saturation Characteristics
S13-0167-Rev. D, 04-Feb-13
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Document Number: 91378
Page 4
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IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 8 - Normalized On-Resistance vs. Temperature
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0167-Rev. D, 04-Feb-13
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91378
Page 5
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R
g
I
L
0.05 Ω
t
p
D.U.T.
L
V
DS
+
V
DD
- 10 V
Var y tp to obtain
required I
L
I
AS
V
DS
V
DD
V
DS
t
p
I
L
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 13a - Maximum Avalanche vs. Starting Junction
Temperature
Fig. 13b - Unclamped Inductive Test Circuit
Fig. 13c - Unclamped Inductive Waveforms
S13-0167-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
5
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 91378
Page 6
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
- 10 V
+
-
V
DS
V
DD
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
www.vishay.com
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Vishay Siliconix
S13-0167-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 15a - Switching Time Waveforms
Fig. 15b - Switching Time Test Circuit
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 16a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
0.2 µF
12 V
0.3 µF
-
V
+
D.U.T.
V
GS
- 3 mA
I
G
Current sampling resistors
I
DS
D
Fig. 16b - Gate Charge Test Circuit
6
Document Number: 91378
Page 7
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
P.W.
Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D =
P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by R
g
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
• Compliment N-Channel of D.U.T. for driver
V
DD
• I
SD
controlled by duty factor “D”
Note
Note
a. V
GS
= - 5 V for logic level and - 3 V drive devices
V
GS
= - 10 V
a
D.U.T. lSD waveform
D.U.T. V
DS
waveform
V
DD
Re-applied
voltage
Ripple ≤ 5 %
I
SD
Reverse
recovery
current
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Vishay Siliconix
Fig. 17 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91378
S13-0167-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
.
7
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 91378
Page 8
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Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
L3
A
C2
DIM. MIN. MAX. MIN. MAX.
MILLIMETERS INCHES
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
D
H
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
L4
L5
L
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
b
e1
b2
e
C
A1
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
gage plane height (0.5 mm)
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
D1
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T16-0236-Rev. P, 16-May-16
E1
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
1
Document Number: 71197
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 9
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
Application Note 826
Vishay Siliconix
0.243
(6.180)
Return to Index
Return to Index
0.420
(10.668)
0.180
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.087
0.090
0.055
(1.397)
(2.202)
(2.286)
APPLICATION NOTE
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
Page 10
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
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Document Number: 91000
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