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DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR420, SiHFR420)
G
• Straight lead (IRFU420, SiHFU420)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) 500
R
(Ω)V
DS(on)
Q
max. (nC) 19
g
Q
(nC) 3.3
gs
Q
(nC) 13
gd
Configuration Single
= 10 V 3.0
GS
S
are possible in typical surface-mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and
halogen-free
SiHFR420-GE3 SiHFR420TR-GE3
IRFR420PbF-BE3 IRFR420TRPbF-BE3 IRFR420TRLPbF-BE3 - -
Lead (Pb)-free IRFR420PbF IRFR420TRPbF
Note
a. See device orientation
a
SiHFR420TRL-GE3 aSiHFR420TRR-GE3 aSiHFU420-GE3
a
IRFR420TRLPbF a IRFR420TRRPbF a IRFU420PbF
Available
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
Gate-source voltage V
Continuous drain current V
Pulsed drain current
a
Linear derating factor 0.33
Linear derating factor (PCB mount)
Single pulse avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
e
b
a
a
Maximum power dissipation T
Maximum power dissipation (PCB mount)
Peak diode recovery dV/dt
c
e
Operating junction and storage temperature range T
Soldering recommendations (peak temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
= 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 Ω, IAS = 2.4 A (see fig. 12)
b. V
DD
c. I
≤ 2.4 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
SD
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
S21-0771-Rev. F, 19-Jul-2021
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 10 V
GS
= 25 °C
C
TA = 25 °C 2.5
For 10 s 260
DS
± 20
GS
T
= 25 °C
C
= 100 °C 1.5
C
I
D
IDM 8.0
E
AS
I
AR
E
AR
P
D
dV/dt 3.5 V/ns
, T
J
stg
-55 to +150
1
500
2.4
0.020
W/°C
400 mJ
2.4 A
4.2 mJ
42
Document Number: 91275
V
AT
W
°C
Page 2
IRFR420, IRFU420, SiHFR420, SiHFU420
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP MAX. UNIT
Maximum junction-to-ambient R
a
Maximum junction-to-case (drain) R
thJA
R
thJA
thJC
- 110
-50
-3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
V
temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
DS
Gate-source threshold voltage V
Gate-source leakage I
Zero gate voltage drain current I
Drain-source on-state resistance R
Forward transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID =1.4 A
DS(on)
fs
Dynamic
Input capacitance C
Reverse transfer capacitance C
Total gate charge Q
Gate-drain charge Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate input resistance R
Internal drain inductance L
iss
-92-
oss
-37-
rss
g
--3.3
gs
--13
gd
d(on)
r
-33-
d(off)
-16-
f
g
D
V
package and center of
Internal source inductance L
S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
Pulsed diode forward current
a
Body diode voltage V
Body diode reverse recovery time t
Body diode reverse recovery charge Q
Forward turn-on time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
VGS = 0 V, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
b
VDS = 50 V, ID = 1.4 A 1.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 2.1 A, VDS = 400 V,
I
= 10 V
GS
V
R
= 18 Ω, RD = 120 Ω, see fig. 10
g
D
see fig. 6 and 13
= 250 V, ID = 2.1 A,
DD
b
b
f = 1 MHz, open drain 1.8 - 12.6 Ω
Between lead,
6 mm (0.25") from
die contact
TJ = 25 °C, IS = 2.4 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WMaximum junction-to-ambient (PCB mount)
--3.0Ω
- 360 -
--19
-8.0-
-8.6-
-4.5-
-7.5-
--2.4
--8.0
--1.6V
- 260 520 ns
-0.701.4μC
μA
pFOutput capacitance C
nC Gate-source charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [email protected]
S21-0771-Rev. F, 19-Jul-2021
2
Document Number: 91275
Page 3
IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S21-0771-Rev. F, 19-Jul-2021
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91275
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IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S21-0771-Rev. F, 19-Jul-2021
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91275
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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
10 V
Var y tp to obtain
required I
AS
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 10a - Switching Time Test Circuit
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 10b - Switching Time Waveforms
V
DS
t
p
V
DD
V
DS
S21-0771-Rev. F, 19-Jul-2021
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
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5
For technical questions, contact: [email protected]
I
AS
Document Number: 91275
Page 6
www.vishay.com
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
0.2 µF
12 V
V
GS
0.3 µF
D.U.T.
3 mA
I
G
Current sampling resistors
I
D
+
-
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
V
DS
S21-0771-Rev. F, 19-Jul-2021
6
Document Number: 91275
For technical questions, contact: [email protected]
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Page 7
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IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
R
g
Driver gate drive
P.W.
+
-
Period
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
• dV/dt controlled by R
• Driver same type as D.U.T.
I
controlled by duty factor “D”
•
SD
• D.U.T. - device under test
-
D =
g
P.W.
Period
+
+
V
DD
-
V
= 10 Va
GS
D.U.T. l
Reverse
recovery
current
D.U.T. V
Re-applied
voltage
Inductor current
Note
a. V
waveform
SD
Body diode forward
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
current
dI/dt
Diode recovery
dV/dt
V
DD
I
SD
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91275
S21-0771-Rev. F, 19-Jul-2021
.
7
Document Number: 91275
For technical questions, contact: [email protected]
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Page 8
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VERSION 1: FACILITY CODE = Y
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
b
e1
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
Note
• Dimension L3 is for reference only
A
C2
L3
D1
D
L4
L5
b2
e
gage plane height (0.5 mm)
C
A1
H
E1
L
Revision: 03-Oct-2022
For technical questions, contact: [email protected]
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1
Document Number: 71197
Page 9
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VERSION 2: FACILITY CODE = N
Package Information
Vishay Siliconix
e
D
L4
3x b
GAUGE
PLANE
θ
2x b2
2x
E
b3
L6
e
(3°)
MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.39
A1 - 0.13
b 0.65 0.89
b1 0.64 0.79
b2 0.76 1.13
b3 4.95 5.46
c 0.46 0.61
c1 0.41 0.56
c2 0.46 0.60
D 5.97 6.22
D1 5.21 -
E 6.35 6.73
E1 4.32 -
e 2.29 BSC
H 9.94 10.34
e
L3
L5
0.25 C A B
(3°)
L2
A
θ
C
C
L
(L1)
c2
DETAIL "B"
θ
H
H
C
A1
E1
SEATING
PLANE
E1/2
c
b1
D1
(b)
c1
DETAIL "B"
MILLIMETERS
DIM. MIN. MAX.
L 1.50 1.78
L1 2.74 ref.
L2 0.51 BSC
L3 0.89 1.27
L4 - 1.02
L5 1.14 1.49
L6 0.65 0.85
0° 10°
1 0° 15°
2 25° 35°
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
ECN: E22-0399-Rev. R, 03-Oct-2022
DWG: 5347
Revision: 03-Oct-2022
For technical questions, contact: [email protected]
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2
Document Number: 71197
Page 10
OPTION 1:
Base
metal
Plating
b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
D
A
c2
c
Lead tip
5
5
(Datum A)
Thermal PAD
E1
4
D1
View A - A
A1
A
A
C
Seating
plane
C
C
B
B
θ1
θ2
B
4
4
4
3
5
L1
L
L3
3 x b2
3 x b
3
b4
E
2 x e
0.010 C BMA
0.25
0.010 BA
0.25
L2
A
C
M
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Case Outline for TO-251AA (High Voltage)
Package Information
Vishay Siliconix
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 -
A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265
b 0.64 0.89 0.025 0.035 E1 4.32 - 0.170 -
b1 0.65 0.79 0.026 0.031 e 2.29 BSC 2.29 BSC
b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380
b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090
b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050
c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060
c1 0.41 0.56 0.016 0.022 1 0' 15' 0' 15'
c2 0.46 0.86 0.018 0.034 2 25' 35' 25' 35'
D 5.97 6.22 0.235 0.245
ECN: E21-0682-Rev. C, 27-Dec-2021
DWG: 5968
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension are shown in inches and millimeters
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC
Revision: 27-Dec-2021
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®
outline TO-251AA
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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1
Document Number: 91362
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E1
θ1
θ2
b1, b3
b, b2
c
c1
Section “B-B” and “C-C”
A1
c
b2
b
e
Ø 1.00
x 0.10 deep
L2
L4L3
DL1
CC
B
B
L
A
c2
D1
D2
Third angle
projection
E
b4
C
L
θ1
OPTION 2: FACILITY CODE = N
Package Information
Vishay Siliconix
DIM. MIN. NOM. MAX. DIM. MIN. NOM. MAX.
A 2.180 2.285 2.390 D2 5.380 - -
A1 0.890 1.015 1.140 E 6.350 6.540 6.730
b 0.640 0.765 0.890 E1 4.32 - -
b1 0.640 0.715 0.790 e 2.29 BSC
b2 0.760 0.950 1.140 L 8.890 9.270 9.650
b3 0.760 0.900 1.040 L1 1.910 2.100 2.290
b4 4.950 5.205 5.460 L2 0.890 1.080 1.270
c 0.460 - 0.610 L3 1.140 1.330 1.520
c1 0.410 - 0.560 L4 1.300 1.400 1.500
c2 0.460 - 0.610 1 0° 7.5° 15°
D 5.970 6.095 6.220 24° - -
D1 4.300 - -
ECN: E21-0682-Rev. C, 27-Dec-2021
DWG: 5968
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimension are in millimeters, angles are in degrees
• Heat sink side flash is max. 0.8 mm
Revision: 27-Dec-2021
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [email protected]
2
Document Number: 91362
Page 12
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
Application Note 826
Vishay Siliconix
0.243
(6.180)
Return to Index
Return to Index
0.420
(10.668)
0.180
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.087
0.090
0.055
(1.397)
(2.202)
(2.286)
APPLICATION NOTE
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
Page 13
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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Revision: 01-Jan-2024
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