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PD - 94103
SMPS MOSFET
IRFU3709
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
l Fully Characterized Avalanche Voltage
GS
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TC = 100°C Maximum Power Dissipation 48 W
Linear Derating Factor 0.96 mW/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ±20 V
Pulsed Drain Current 360
Junction and Storage Temperature Range -55 to + 150 °C
V
DSS
R
DS(on)
max I
30V 9.0mΩ 90A
I-Pak
IRFU3709
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.04
Junction-to-Ambient ––– 110 °C/W
Notes through are on page 9
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02/20/01
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IRFU3709
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.9 9.0 V
––– 7.9 10.5 VGS = 4.5V, ID = 12A
mΩ
= 10V, ID = 15A
GS
Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
= 16V
GS
nA
V
= -16V
GS
Forward Transconductance 53 ––– ––– SVDS = 15V, ID = 30A
Total Gate Charge ––– 27 41 ID = 15A
Gate-to-Source Charge ––– 6.7 ––– nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 9.7 ––– VGS = 4.5V
Output Gate Charge ––– 22 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 171 ––– ID = 30A
Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω
ns
Fall Time ––– 9.2 ––– VGS = 4.5V
Input Capacitance ––– 2672 ––– VGS = 0V
Output Capacitance ––– 1064 ––– pF VDS = 16V
Reverse Transfer Capacitance ––– 109 ––– ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 382 mJ
Avalanche Current ––– 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
90
360
showing the
A
p-n junction diode.
G
––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V
Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A, VR=15V
Reverse Recovery Charge ––– 46 69 nC di/dt = 100A/µs
Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 30A, VR=15V
Reverse Recovery Charge ––– 52 78 nC di/dt = 100A/µs
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D
S
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IRFU3709
1000
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
90A
°
T = 25 C
100
J
°
T = 150 C
J
1.5
1.0
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
2.0 3.0 4.0 5.0 6.0 7.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFU3709
)
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
+ C
C
iss
C
oss
C
rss
C SHORTED
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
6
I =
30A
D
5
4
3
2
GS
1
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
V = 6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.8 1.4 2.0 2.6
°
T = 150 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
1000
10us
100
D
I , Drain Current (A)I , Drain Current (A)
10
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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(
)
100
LIMITED BY PACKAGE
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFU3709
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
10
thJC
1
D = 0.50
0.20
P
0.10
0.1
0.05
Thermal Response(Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
THERMAL RESPONSE
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFU3709
A
15V
DRIVER
R
V
G
20V
DS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
1200
TOP
1000
800
+
V
DD
-
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
I
D
13A
19A
30A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
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DS
Page 7
IRFU3709
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRFU3709
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
2X
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
9.65 (.380)
8.89 (.350)
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CON TROL LIN G D IME NSION : INCH.
3 CON FOR MS TO J ED EC O U TL IN E TO-25 2AA.
4 DIMENSIONS SHOW N ARE BEFORE S OLD ER DIP,
S O LDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
I-Pak (TO-251AA) Part Marking Information
LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - S O UR CE
4 - D R A IN
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IRFU3709
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
= 25°C, L = 0.85mH
J
= 30A.
AS
This product has been designed and qualified for the industrial market.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/01
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