Page 1
IRFR220, IRFU220
Data Sheet July 1999
4.6A, 200V, 0.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA9600.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFR220 TO-252AA IFR220
IRFU220 TO-251AA IFU220
NOTE: When ordering, use the entire part number.
File Number
Features
• 4.6A, 200V
DS(ON)
= 0.800Ω
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
2410.2
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN (FLANGE)
DRAIN
GATE
GATE
DRAIN
SOURCE
S
DRAIN
(FLANGE)
4-389
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
IRFR220, IRFU220
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specfied
C
IRFR220, IRFU220 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
D
DM
GS
D
200 V
200 V
4.6 A
2.9 A
18 A
±20 V
50 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
85 mJ
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
DSSID
GS(TH)VGS
DSS
D(ON)VDS
= 250µA, VGS = 0V, (Figure 10) 200 - - V
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
> I
D(ON)
, VGS = 0V - - 25 µA
DSS
, VGS = 0V, TJ = 125oC - - 250 µA
DSS
x r
DS(ON)MAX
, VGS = 10V,
4.6 - - A
(Figure 7)
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VDD
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
GSS
VGS = ±20V - - ±100 nA
= 2.4A, VGS = 10V, (Figures 8, 9) - 0.47 0.800 Ω
VDS≥ 50V, ID = 2.4A, (Figure 12) 1.7 2.6 - S
fs
= 100V, I
VGS = 10V
r
MOSFET Switching Times are Essentially Independent of Operating Temperature
f
= 10V, ID = 4.6A, VDS = 0.8 x Rated BV
I
= 1.5mA, (Figure 14)
g(REF)
Gate Charge is Essentially Independent of Operat-
gs
ing Temperature
gd
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 330 - pF
ISS
OSS
RSS
Measured From the Drain
D
Lead, 6.0mm (0.25in)
FromPackage to Centerof
Die
Measured From the
S
Source Lead, 6.0mm
(0.25in) From Package to
Source Bonding Pad
θJC
Typical Solder Mount - - 110oC/W
θJA
≈ 4.6A, R
D
= 18Ω, RL = 18Ω,
GS
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
G
- 8.8 13 ns
-2741ns
-2132ns
-1421ns
,
DSS
-1218nC
- 2.3 3.4 nC
- 4.5 6.8 nC
- 120 - pF
-41-pF
- 4.5 - nH
D
L
D
L
S
S
- 7.5 - nH
- - 2.5oC/W
4-390
Page 3
IRFR220, IRFU220
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I
Source to Drain Diode Voltage (Note 2) V
SD
SDM
SD
Reverse Recovery Time t
Reverse Recovery Charge Q
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD= 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω,peak IAS = 4.6A.
Modified MOSFET Symbol Showing the Integral
Reverse P-N Junction
D
- - 4.6 A
- - 18 A
Rectifier
G
S
TJ = 25oC, ISD = 4.6A, VGS = 0V, (Figure 13) - - 1.8 V
TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs 69 170 400 ns
rr
TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs 0.30 0.72 1.8 µC
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
T
, CASE TEMPERATURE (oC)
C
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
0.5
1
0.2
0.1
THERMAL IMPEDANCE
-2
10
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
-4
10
10
, TRANSIENT
θJC
Z
5
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
25 75 125
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
-3
t1, RECTANGULAR PULSE DURATION (S)
-2
10
50 100
TC, CASE TEMPERATURE (oC)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
0.1 1 10
θJC
1/t2
+ T
150
C
4-391
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
Page 4
IRFR220, IRFU220
Typical Performance Curves
100
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
10
1
, DRAIN CURRENT (A)
D
I
0.1
T
= MAX RATED
J
TC = 25oC
SINGLE PULSE
101
VDS, DRAIN TO SOURCE VOLTAGE (V)
Unless Otherwise Specified (Continued)
10
10µs
100µs
1ms
10ms
DC
100
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
020406080
VGS = 10V
= 8V
V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 6V
VGS = 4V
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
VGS = 10V
VGS =8V
VGS =7V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 50V
V
DS
1
TJ = 150oC
TJ = 25oC
VGS = 7V
VGS = 5V
100
4
, DRAIN CURRENT (A)
D
I
2
0
0
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS =4V
23 5
VGS =6V
VGS =5V
4
0.1
, DRAIN CURRENT (A)
D
I
-2
10
0246810
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
VGS = 10V
3
2
, DRAIN TO SOURCE
ON RESISTANCE (S)
1
DS(ON)
r
0
0 5 10 15 20 25
, DRAIN CURRENT (A)
I
D
VGS = 20V
3.0
2.4
1.8
1.2
ON RESISTANCE
0.6
NORMALIZED DRAIN TO SOURCE
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 2.4A
-40 0 40
TJ, JUNCTION TEMPERATURE (oC)
80
120
160
FIGURE 8. DRAIN TO SOURCE ON RESISTANCEvs GATE
VOLTAGE AND DRAIN CURRENT
4-392
FIGURE 9. NORMALIZED DRAIN TOSOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Page 5
IRFR220, IRFU220
Typical Performance Curves
1.25
ID = 250µA
1.15
1.05
0.95
BREAKDOWN VOLTAGE
0.85
NORMALIZED DRAIN TO SOURCE
0.75
-40 0 40
, JUNCTION TEMPERATURE (oC)
T
J
Unless Otherwise Specified (Continued)
80
120
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 50V
4
TJ = 25oC
3
160
1000
VGS= 0V, f = 1MHz
C
= CGS + C
ISS
C
= C
RSS
800
C
≈ C
OSS
600
400
C, CAPACITANCE (pF)
200
0
110
GD
GD
+ C
DS
GD
C
ISS
C
OSS
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
2
2
, TRANSCONDUCTANCE (S)
1
fs
g
0
0246810
, DRAIN CURRENT (A)
I
D
TJ = 150oC
TJ = 150oC
1
, SOURCE TO DRAIN CURRENT (A)
SD
I
0.1
0 0.3 0.6 0.9 1.2
, SOURCE TO DRAIN VOLTAGE (V)
V
SD
TJ = 25oC
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 4.6A
= 160V
V
16
12
8
, GATE TO SOURCE (V)
GS
4
V
0
0246810
Q
, TOTAL GATE CHARGE (nC)
g(TOT)
DS
VDS = 100V
= 40V
V
DS
1.5
4-393
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Page 6
IRFR220, IRFU220
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
TO OBTAIN
P
REQUIRED PEAK I
V
GS
AS
R
G
+
V
DD
-
DUT
0V
P
I
AS
0.01Ω
0
t
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
P
I
AS
t
AV
V
DS
V
DD
t
ON
t
d(ON)
t
R
L
+
V
R
G
DD
-
V
DS
90%
0
r
10%
DUT
V
GS
V
GS
10%
0
50%
PULSE WIDTH
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
12V
BATTERY
0
0.2µF
50kΩ
I
G(REF)
CURRENT
REGULATOR
0.3µF
G
IG CURRENT
SAMPLING
RESISTOR RESISTOR
SAME TYPE
AS DUT
D
DUT
S
CURRENT
I
D
SAMPLING
(ISOLATED
SUPPLY)
V
DS
V
DD
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
I
G(REF)
0
t
d(OFF)
90%
V
GS
t
OFF
50%
t
f
10%
90%
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
4-394
Page 7
IRFR220, IRFU220
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Intersil semiconductor products are sold by description only. Intersil Corporationreserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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4-395
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