Page 1
IRFR214, IRFU214
Data Sheet July 1999 File Number
2.2A, 250V, 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFR214 TO-252AA IRFR214
IRFU214 TO-251AA IRFU214
NOTE: When ordering, use the entire part number.
Features
• 2.2A, 250V
DS(ON)
= 2.000Ω
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
o
C Operating Temperature
• 150
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
3274.2
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
IRFR214, IRFU214
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFR214, IRFU214 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
D
DM
GS
D
250 V
250 V
2.2
1.4
8.8 A
±20 V
25 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
as
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
61 mJ
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC TO 125oC
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
On-State Drain Current I
D(ON)VDS
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 4) r
DS(ON)ID
Forward Transconductance (Note 4) g
Turn-On Delay Time t
d(ON)VDD
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)VGS
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
GSS
fs
r
f
gs
gd
ISS
OSS
RSS
= 250µA, VGS = 0V 250 - - V
= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS =0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
, VGS = 0V
DSS
- - 250 µA
TJ = 150oC
> I
D(ON)
x r
DS(ON)MAX
, VGS = 10V 2.2 - - A
VGS = ±20V - - ±100 nA
= 1.3A, VGS = 10V (Figure 8) - 1.6 2.000 Ω
VDS = ≥ 50V, IDS = 1.3A 1.1 - - S
= 0.5 x Rated BV
≈ 2.7A, RGS=24Ω,
DSS,ID
- 7.0 - ns
RL = 4.5Ω,VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 7.6 - ns
-16- ns
- 7.0 - ns
= 10V, ID≈ 5.6A, VDS= 0.8 x Rated BV
DSS
,
- - 10 nC
(Figure 11)
Gate Charge is Essentially Independent of Operating Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz
- - 1.8 nC
- - 5.5 nC
- 140 - pF
(Figure 9)
-42-pF
- 9.6 - pF
4-384
Page 3
IRFR214, IRFU214
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 2)
SD
I
SDM
Measured From the
D
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From The
S
Source Lead, 6mm
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
- 4.5 - nH
- 7.5 - nH
(0.25in) From Header to
Source Bonding Pad
θJC
Free Air Operation - - 110
θJA
Modified MOSFET
Symbol Showing the Integral Reverse
P-N Junction Diode
G
L
S
S
- - 5.0
D
- - 2.2 A
- - 8.8 A
G
o
C/W
o
C/W
S
Source to Drain Diode Voltage (Note 4) V
Reverse Recovery Time t
Reverse Recovery Charge Q
TJ = 25oC, ISD = 2.2A, VGS = 0V(Figure 10) - - 2.0 V
SD
TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs 97 - 390 ns
rr
TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs 0.32 - 1.3 µC
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. VDD = 50V, starting TJ= 25oC, L = 21mH, RG = 25Ω, peak IAS = 2.2A.
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
2.4
2.0
1.6
1.2
0.8
, DRAIN CURRENT (A)
D
I
0.4
0
25 50 75 100 125
T
, CASE TEMPERATURE (oC)
C
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4-385
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Page 4
IRFR214, IRFU214
Typical Performance Curves
10
0.5
0.2
1
0.1
0.05
, TRANSIENT
JC
θ
Z
100
10
0.02
0.01
0.1
THERMAL IMPEDANCE
0.01
-5
10
OPERATION IN THIS
AREA LIMITED
BY r
SINGLE PULSE
10
DS(ON)
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Unless Otherwise Specified (Continued)
-3
10
t1, RECTANGULAR PULSE DURATION (s)
100µs
-2
10
0
10
0.1 1
TOP
BOTTOM
VGS= 15V
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
= 10V
= 8V
= 7V
= 6V
= 5.5V
= 5V
= 4.5V
P
DM
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1
t
2
1/t2
+ T
JC
C
θ
10
1.0
, DRAIN CURRENT (A)
D
I
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
0.1
110
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
1ms
10ms
100 1000
-1
10
, DRAIN CURRENT (A)
D
I
-1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
= 25oC
0
10
C
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS (TC = 25oC)
TOP
0
10
BOTTOM
-1
10
, DRAIN CURRENT (A)
D
I
-1
10
VGS= 15V
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
V
GS
VDS, DRAIN TO SOURCE VOLTAGE (V)
= 10V
= 8V
= 7V
= 6V
= 5.5V
= 5V
= 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 150oC
T
0
10
C
1
10
10
TJ = 150oC
1
TJ = 25oC
0.1
, DRAIN CURRENT (A)
-2
10
D
I
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= ≥ 50V
-3
10
456 10789
DS
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. OUTPUT CHARACTERISTICS (TC = 150oC) FIGURE 7. TRANSFER CHARACTERISTICS
4-386
Page 5
IRFR214, IRFU214
Typical Performance Curves
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V, ID = 5.6A
GS
2.0
Unless Otherwise Specified (Continued)
1.5
1.0
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TOSOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V
GS
TJ = 150oC
0
10
TJ = 25oC
500
400
300
VGS = 0V, f = 1MHz
C
ISS
C
RSS
C
OSS
C
ISS
= CGS + C
= C
GD
= CDS + C
GD
GS
200
C
C, CAPACITANCE (pF)
100
0
10
OSS
C
RSS
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
ID = 2.7A
16
12
8
VDS = 200V
V
= 125V
DS
VDS = 50V
2
10
4
, SOURCE TO DRAIN CURRENT (A)
SD
I
-1
10
0.6 0.8 1.0 1.2 1.4
, SOURCE TO DRAIN VOLTAGE (V)
V
SD
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
02 46 810
Q
, GATE CHARGE (nC)
g
FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
V
DS
BV
DSS
VARY t
TO OBTAIN
P
REQUIRED PEAK I
V
GS
t
0V
P
AS
L
R
G
+
V
DD
-
DUT
I
AS
0.01Ω
0
t
P
I
AS
t
AV
V
DS
V
DD
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
4-387
Page 6
IRFR214, IRFU214
Test Circuits and Waveforms
R
G
V
GS
FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
12V
BATTERY
0.2µF
50kΩ
0.3µF
(Continued)
R
L
DUT
+
V
DD
-
V
DS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
t
ON
t
d(ON)
t
gs
50%
10%
r
PULSE WIDTH
Q
Q
g(TOT)
gd
V
DS
0
V
GS
0
V
DD
90%
10%
Q
t
d(OFF)
90%
V
GS
t
OFF
50%
t
f
90%
10%
G
I
0
G(REF)
IG CURRENT
SAMPLING
RESISTOR RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
D
S
CURRENT
I
D
SAMPLING
DUT
0
I
V
DS
0
G(REF)
FIGURE 17. GATE CHARGE WAVEFORMS
V
DS
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Intersil semiconductor products are sold by description only. Intersil Corporationreserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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4-388
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