Datasheet IRFS7787PBF Datasheet

D

S

G

25 50 75 100 125 150 175

TC , CaseTemperature (°C)

0

20

40

60

80

I

D

, Drain Current (A)

4 8 12 16 20

VGS, Gate-to-Source Voltage (V)

0

10

20

30

40

R

DS

(on), Drain-to -Source On Resistance (

m



)

TJ = 25°C

TJ = 125°C

ID = 46A

StrongIRFET™

IRFB7787PbF

IRFS7787PbF

IRFSL7787PbF

Application

 Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant

TO-220AB

IRFB7787PbF

G

S

D

HEXFET® Power MOSFET

V

DSS

R

DS(on)

typ.

max

I

D

S

G

D2Pak

IRFS7787PbF

6.9m

8.4m

D

TO-262

IRFSL7787PbF

G D S

Gate Drain Source

Base part number Package Type Standard Pack Orderable Part Number

Form Quantity

IRFB7787PbF TO-220 Tube 50 IRFB7787PbF

IRFSL7787PbF TO-262 Tube 50 IRFSL7787PbF

Tube 50 IRFS7787PbF

IRFS7787PbF

D2-Pak

Tape and Reel Left 800 IRFS7787TRLPbF

75V

76A

G

S

D

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature

IRFB/S/SL7787PbF

Absolute Maximum Rating

Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 76 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 54

I

DM

Pulsed Drain Current  280

A

PD @TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 0.83 W/°C V T

T

GS

J

STG

Gate-to-Source Voltage ± 20 V Operating Junction and

Storage Temperature Range

-55 to + 175 °C

Soldering Temperature, for 10 seconds (1.6mm from case) 300

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Avalanche Characteristics

E

AS (Thermally limited)

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy  Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  mJ

See Fig 15, 16, 23a, 23b

144 209

mJ

A

Thermal Resistance Symbol Parameter Typ. Max. Units

R

JC



R

CS



R

JA



Junction-to-Case  Case-to-Sink, Flat Greased Surface Junction-to-Ambient 

––– 1.2

0.50 ––– ––– 62

°C/W

Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

V

(BR)DSS

R

Static Drain-to-Source On-Resistance

DS(on)

V

GS(th)

I

Drain-to-Source Leakage Current

DSS

I

GSS

R

G

Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA 

/T

J

––– 6.9 8.4 ––– 8.2 –––

VGS = 10V, ID = 46A

m

VGS = 6.0V, ID = 23A

Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 100µA

––– ––– 1.0

––– ––– 150 VDS = 75V,VGS = 0V,TJ =125°C Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

Gate Resistance ––– 2.1 –––

VDS = 75 V, VGS = 0V

µA

VGS = 20V

nA



Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Limited by T  ISD  46A, di/dt  425A/µs, V

, starting TJ = 25°C, L = 0.138mH, RG = 50, IAS = 46A, VGS =10V.

Jmax

DD

 V

(BR)DSS

, TJ  175°C.

 Pulse width  400µs; duty cycle  2%.  C  C

eff. (TR) is a fixed capacitance that gives the same charging time as C

oss

eff. (ER) is a fixed capacitance that gives the same energy as C

oss

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

DSS

.

 R is measured at TJ approximately 90°C.  Limited by T

, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.

Jmax

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

DSS

.

D

S

G

IRFB/S/SL7787PbF

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 154 ––– ––– S VDS = 10V, ID =46A Q

g

Q

gs

Q

gd

Q

sync

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss eff.(ER)

C

oss eff.(TR)

Total Gate Charge ––– 73 109

Gate-to-Source Charge ––– 18 ––– VDS = 38V

ID = 46A

nC

Gate-to-Drain Charge ––– 23 ––– VGS = 10V Total Gate Charge Sync. (Qg– Qgd) ––– 50 ––– Turn-On Delay Time ––– 11 –––

VDD = 38V

Rise Time ––– 48 ––– ID = 46A

Turn-Off Delay Time ––– 51 –––

Fall Time ––– 39 –––

Input Capacitance ––– 4020 –––

ns

RG= 2.7

VGS = 10V

VGS = 0V Output Capacitance ––– 330 ––– VDS = 25V

Reverse Transfer Capacitance ––– 205 ––– Effective Output Capacitance

(Energy Related)

––– 295 ––– VGS = 0V, VDS = 0V to 60V

ƒ = 1.0MHz, See Fig.7

pF

Output Capacitance (Time Related) ––– 380 ––– VGS = 0V, VDS = 0V to 60V

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

IS

I

SM

V

SD

Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  p-n junction diode.

––– ––– 76

––– ––– 280

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 46A,VGS = 0V 

MOSFET symbol

showing the

A

integral reverse

dv/dt Peak Diode Recovery dv/dt ––– 10 ––– V/ns TJ = 175°C,IS =46A,VDS = 75V

t

rr

Q

I

RRM

Reverse Recovery Time

rr

Reverse Recovery Charge

––– 33 ––– ––– 39 ––– TJ = 125°C IF = 46A, ––– 42 ––– ––– 61 ––– TJ = 125°C

Reverse Recovery Current ––– 2.2 ––– A

TJ = 25°C VDD = 64V

ns

TJ = 25°C di/dt = 100A/µs 

nC

TJ = 25°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

, Drain-to-Source Current (A)



60µs PULSE WIDTH

Tj = 25°C

4.5V

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

, Drain-to-Source Current (A)



60µs PULSE WIDTH

Tj = 175°C

4.5V

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

2.0 3.0 4.0 5.0 6.0 7.0

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

, Drain-to-Source Current (A)

V

DS

= 25V



60µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

ID = 46A

V

GS

= 10V

1 10 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance (pF)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

is s

= C

gs

+ Cgd, C

ds

SHORTE D

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 20 40 60 80 100

Q

G

Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V

GS

, Gate-to-Source Voltage (V)

VDS= 60V

VDS= 38V

V

DS=

15V

ID= 46A

IRFB/S/SL7787PbF

Fig 3. Typical Output Characteristics

Fig 5. Typical Transfer Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Normalized On-Resistance vs. Temperature

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs.

Gate-to-Source Voltage

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Temperature ( °C )

75

80

85

90

95

V

(BR)DSS

,

Drain-to-Source Breakdown Voltage (V)

Id = 1.0mA

0 10 20 30 40 50 60 70 80

V

DS,

Drain-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

Energy (µJ)

0 40 80 120 160

ID, Drain Current (A)

5.0

10.0

15.0

20.0

25.0

30.0

R

DS

(on), Drain-to -Source On Resistance (

m



)

V

GS

= 5.5V

V

GS

= 6.0V

V

GS

= 7.0V

V

GS

= 8.0V

V

GS

= 10V

0.1 1 10

VDS, Drain-toSource Voltage (V)

0.1

1

10

100

I

D

, Drain-to-Source Current (A)

Tc = 25°C Tj = 175°C Single Pulse

1msec

10msec

100µsec

DC

OPERATION I N THIS AREA LIMI TED BY RDS(on)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I

SD

, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

V

GS

= 0V

IRFB/S/SL7787PbF

Fig 9. Typical Source-Drain Diode Forward Voltage

Fig 11. Drain-to-Source Breakdown Voltage

Fig 10. Maximum Safe Operating Area

Fig 12. Typical C

Stored Energy

oss

Fig 13. Typical On-Resistance vs. Drain Current

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

Thermal Response ( Z

thJC

) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

0

20

40

60

80

100

120

140

160

E

AR

, Avalanche Energy (mJ)

TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 46A

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

1

10

100

Avalanche Current (A)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse)

IRFB/S/SL7787PbF

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 15. Avalanche Current vs. Pulse Width

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

Fig 16. Maximum Avalanche Energy vs. Temperature

temperature far in excess of T part type.

2. Safe operation in Avalanche is allowed as long asT exceeded.

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.

4. P

= Average power dissipation per single avalanche pulse.

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f Z PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ Z Iav = 2T/ [1.3·BV·Zth] E

(D, tav) = Transient thermal resistance, see Figures 14)

thJC

AS (AR)

= P

D (ave)·tav

. This is validated for every

jmax

is not

jmax

thJC

jmax

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS

(th) Gate threshold Voltage (V)

ID = 100µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

0 200 400 600 800

diF /dt (A/µs)

0

4

8

12

16

I

RRM

(A)

IF = 46A

VR = 64V

TJ = 25°C

TJ = 125°C

0 200 400 600 800

diF /dt (A/µs)

0

4

8

12

16

I

RRM

(A)

IF = 30A

VR = 64V

TJ = 25°C

TJ = 125°C

0 200 400 600 800

diF /dt (A/µs)

0

50

100

150

200

250

Q

RR

(nC)

IF = 30A

VR = 64V

TJ = 25°C

TJ = 125°C

0 200 400 600 800

diF /dt (A/µs)

0

50

100

150

200

250

Q

RR

(nC)

IF = 46A

VR = 64V

TJ = 25°C

TJ = 125°C

IRFB/S/SL7787PbF

Fig 17. Threshold Voltage vs. Temperature

Fig 18. Typical Recovery Current vs. dif/dt

Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt

Fig 21. Typical Stored Charge vs. dif/dt

R

G

I

A S

0. 01



t

p

D. U.T

L

V

DS

+

-

V

D D

DR IV ER

A

15 V

20 V

t

p

V

(B R )D S S

I

A S

Vd s

Vg s

Id

Vg s(t h)

Qg s1

Qg s2 Qgd Q god r

IRFB/S/SL7787PbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 23a. Unclamped Inductive Test Circuit

Fig 24a. Switching Time Test Circuit

VDD

Fig 23b. Unclamped Inductive Waveforms

Fig 24b. Switching Time Waveforms

Fig 25a. Gate Charge Test Circuit

Fig 25b. Gate Charge Waveform

I N T E R N A T I O N A L

P A R T N U M B E R

R E C T I F I E R

L O T C O D E

A S S E M B L Y

L O G O

Y E A R 0 = 2 0 0 0

D A T E C O D E

W E E K 1 9 L I N E C

L O T C O D E 1 7 8 9

E X A M P L E : T H I S I S A N I R F 1 0 1 0

N o t e : "P " i n a s s e m b l y li n e p o s i t i o n

i n d ic a t e s "L e a d - F r e e "

I N T H E A S S E M B L Y L I N E "C "

A S S E M B L E D O N W W 1 9 , 2 0 0 0

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

IRFB/S/SL7787PbF

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

LOGO

RECTIFIER

INTERNATIONAL

LOT CODE

ASSEMBLY

LOGO

RECTIFIER

INTERNATIONAL

DATE CODE

WEEK 19

YEAR 7 = 1997

PART NUMBER

A = ASSEMBLY SITE CODE

OR

PRODUCT (OPTIONAL)

P = DESIGNATES LEAD-FREE

EXAMPLE: THIS IS AN IRL3103L

LOT CODE 1789

ASSEMBLY

PART NUMBER

DATE CODE

WEEK 19 LINE C

LOT CODE

YEAR 7 = 1997

ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

TO-262 Package Outline (Dimensions are shown in millimeters (inches)

IRFB/S/SL7787PbF

TO-262 Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

DATE CODE

YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE

RECTIFIER

INTERNATIONAL

PART NUMBER

P = DESIGNATES LEAD - FREE

PRODUCT (OPTIONAL)

F530S

IN THE ASSEMBLY LINE "L"

ASSEMBLED ON WW 02, 2000

THIS IS AN IRF530S WITH

LOT CODE 8024

INTERNATIONAL

LOGO

RECTIFIER

LOT CODE

ASSEMBLY

YEAR 0 = 2000

PART NUMBER

DATE CODE

LINE L

WEEK 02

OR

F530S

LOGO

ASSEMBLY LOT CODE

D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

IRFB/S/SL7787PbF

D2Pak (TO-263AB) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

3

4

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449)

15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362) MIN.

30.40 (1.197) MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

IRFB/S/SL7787PbF

D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Qualification Information†

Qualification Level

IRFB/S/SL7787PbF

Industrial

(per JEDEC JESD47F)

††

Moisture Sensitivity Level

RoHS Compliant

TO-220 N/A

D2Pak

TO-262

(per JEDEC J-STD-020D††)

MSL1

Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History

Date Comment

03/05/2015

04/21/15

 Updated EAS

 Updated note 9 “Limited by T  Updated package outline on page 9,10,11.

= 209mJ on page 2

(L =1mH)

, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V” on page 2

Jmax

 Updated Vsd curve Fig 9 on page 5

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/