Datasheet IRFS7437PBF Datasheet

Applications

R

DS(on)

typ.

1.4m

Ω

Form

Quantity

IRFS7437PbF

D2Pak

Tape and Reel Left

800

IRFS7437TRLPbF

l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits

l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters

l DC/AC Inverters

S trongIRFET

IRFS7437PbF

IRFSL7437PbF

HEXFET® Power MOSFET

V

D

DSS

max. 1.8mΩ

G

S

I

D

(Silicon Limited)

I

D

(Package Limited)

40V

250A

195A

c

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free

Base Part Number Package Type Orderable Part Number

IRFSL7437PbF TO-262 Tube 50 IRFSL7437PbF

IRFS7437PbF D2Pak Tube 50 IRFS7437PbF

)

Ω

6

(

m e

c n a

5

t s

i s e

R

4

n O e

c

r

3

u o S

o

t

-

2

n

i a

r D ,

1

) n o

(

S D

0

R

4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0

VGS, Gate-to-Source Voltage (V)

ID = 100A

TJ = 125°C

TJ = 25°C

D

S

G

D2Pak

IRFS7437PbF

D

G

TO-262

IRFSL7437PbF

S

D

GDS

Gate Drain Source

Standard Pack

250

LIMITED BY PACKAGE

200

) A

( t n e

150

r

r u

C n

i a

r

100

D ,

D

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature

IRFS7437PbF/IRFSL7437PbF

D

DM

GS

J

STG

AS (T herm ally limit ed)

AR

θ

JC

θ

JA

Absolute Maximum Ratings

Symbol Parameter Units

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

@ TC = 100°C Continuous Drain Curr ent, VGS @ 10V (Silicon Limited)

I

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

I

PD @TC = 25°C

Pulsed Drain Current

Maximum Power Dissipation

d

Linear Derating Factor

V

dv/dt

T

Gate-to- Source Voltage

Peak Diode Recovery

f

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

I

E

Single Pulse Avalanche Energy

Avalanche Current

d

Repetitive Avalanche Energy

e k

See Fig. 14, 15, 22a, 22b

d

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

Junction-to-C as e

Junction-to-Ambient (PCB Mount) , D2Pak

j

–––

––– 40

Max.

250

180

195

1000

230

1.5

± 20

3.0

-55 to + 175

300

x

10lbf

in (1.1Nxm)

350

802

c

0.65

A

W

W/°C

V

V/ns

°C

mJ

A

mJ

°C/W

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

ΔV

R

DS(on)

(BR)DSS

/ΔT

Drain-to-Sour c e Break dow n Voltage 40 ––– ––– V

Breakdown Voltage Temp. Coeffic ient ––– 0.029 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 1.4 1.8

––– 2.0 –––

V

I

DSS

GS(th)

Gate Threshold Voltage 2.2 3.0 3.9 V

Drain-to-Sour c e Leak age Cur r ent ––– ––– 1.0 μA

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate- t o-Source Rev er s e Leak age ––– ––– - 100

R

G

Internal Gate Resistance ––– 2.2 ––– Ω

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 50Ω, I

 I

≤ 100A, di/dt ≤ 1166A/μs, V

SD

, starting TJ = 25°C, L = 0.069mH

Jmax

= 100A, VGS =10V.

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.  C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 C

eff. (ER) is a fixed capacitance that gives the same energy as

oss

C

while V

oss

 R

is measured at TJ approximately 90°C.

θ

 Limited by T

DS

Jmax

Conditions

= 0V, ID = 250μA

V

GS

Reference to 25°C, I

VGS = 10V, ID = 100A

mΩ

V

= 6.0V, ID = 50A

GS

V

= VGS, ID = 150μA

DS

V

= 40V, VGS = 0V

DS

= 40V, VGS = 0V, TJ = 125°C

V

DS

V

= 20V

GS

V

= -20V

GS

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DSS

.

starting TJ = 25°C, L= 1mH, RG = 50Ω, I

= 1mA

D

= 40A, VGS =10V.

AS

d

IRFS7437PbF/IRFSL7437PbF

g

sync

d(on)

r

oss

rss

S

SM

rr

J

rr

on

D

DS

D

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 160 ––– ––– S Q Q

gs

Q

gd

Q t t t

d(off)

t

f

C

iss

C C C

eff. (ER ) Effective Output Cap acitance (En ergy Relate d)

oss

eff. (TR) Effective Output Cap acitance (Time Rela ted)

C

oss

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

V

SD

t

Q

I

RRM

t

Total Gate Charge ––– 150 225 nC Gate-to-Source Charge ––– 41 ––– Gate-to-Drain ("Miller") Charge ––– 51 ––– Total Gate C harge Sync. (Qg - Qgd) ––– 99 ––– Turn-On Delay Time ––– 19 ––– ns Rise Time ––– 70 ––– Turn-Off Delay Time ––– 78 ––– Fall Time ––– 53 ––– Input Capacitance ––– 7330 ––– pF Output Capacitance ––– 1095 ––– Reverse Transfer Capacitance ––– 745 –––

i

h

Continuous Source Current ––– ––– 250

––– 1310 ––– ––– 1735 –––

c

(Body Diode) Pulsed Source Current ––– ––– 1000 A

(Body Diode)

d

Diode Forward Voltage ––– 1.0 1.3 V Reverse Recovery Time ––– 30 ––– ns TJ = 25°C VR = 34V,

––– 30 ––– T

Reverse Recovery Charge ––– 24 ––– nC TJ = 25°C

––– 25 ––– TJ = 125°C Reverse Recovery Current ––– 1.3 ––– A TJ = 25°C Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 10V, ID = 100A I

= 100A

V

=20V

DS

VGS = 10V

= 100A, VDS =20V, VGS = 10V

I

g

VDD = 20V

= 30A

I R

= 2.7Ω

G

g

= 10V

V

GS

VGS = 0V V

= 25V ƒ = 1.0 MHz, See Fig. 5 V

= 0V, VDS = 0V to 32 V , See Fig. 11

GS

V

= 0V, VDS = 0V to 32 V

GS

Conditions

MOSFET symbol

A

showing the integral reverse

p-n junction diode. T

= 2 5°C, IS = 100A, VGS = 0V

J

= 125°C IF = 100A

g

di/dt = 100A/μs

D

G

S

g

IRFS7437PbF/IRFSL7437PbF

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

i

10

a

r D

,

D

I

4.5V

TOP 15V

BOTTOM 4.5V

≤60μs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

1000

) A

(

t n e

r

100

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

10

TJ = 175°C

TJ = 25°C

V

DS

= 10V

≤60μs PULSE WIDTH

1.0 3 4 5 6 7 8

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

) A

( t n e

r

r u

C e

c

r u

100

o S

o

t

n

i a

r D

,

D

I

10

4.5V

60μs PULSE WIDTH

≤

Tj = 175°C

TOP 15V

BOTTOM 4.5V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

1.8

1.6

1.4

1.2

1.0

0.8

ID = 100A

V

= 10V

GS

0.6

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

100000

) F p

10000

( e

c n a

t

i c a p a

C ,

1000

C

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

oss

= C

gd

ds

C

+ Cgd, C

+ C

gd

C

iss

C

oss

C

rss

SHORTED

ds

14

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 100A

12

10

8

6

4

S G

2

VDS= 32V

VDS= 20V

0

100

1 10 100

VDS, Drain-to-Source Voltage (V)

0 40 80 120 160 200

Q

Total Gate Charge (nC)

G

Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage

1000

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

100

10

1

0.1

0.0 0.5 1.0 1.5 2.0 2.5

TJ = 25°C

V

= 0V

GS

VSD, Source-to-Drain Voltage (V)

Fig 9. Typical Source-Drain Diode

) V

(

50

e g a

t

l o V

n w

o d k a e

r B

e c

r u o S

o

t

n

i a

r D

,

S S D

) R B

(

V

Id = 1.0mA

48

46

44

42

40

-60 -40 -20 0 20 40 60 80 100120140160180

Forward Voltage

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

)

8

Ω

m

( e

c

7

n a

t s

i s e

6

R n O

5

e c

r u o S

4

o

t

n

i a

3

r D

,

) n

2

o

( S

D

R

1

0 100 200 300 400 500

V

= 5.5V

GS

V

= 6.0V

GS

V

= 7.0V

GS VGS = 8.0V VGS = 10V

ID , Drain Current (A)

IRFS7437PbF/IRFSL7437PbF

1000

) A

( t n e

r

100

r u

C e

c

r u o

10

S

o

t

n

i a

r D

1

,

D

I

0.1

0.1 1 10

Limited by Package

OPERATION IN THIS AREA LIMITED BY RDS(on)

Tc = 25°C Tj = 175°C Single Pulse

VDS, Drain-toSource Voltage (V)

Fig 10. Maximum Safe Operating Area

1.2

1.0

0.8

) J

μ

( y

0.6

g

r e n E

0.4

0.2

0.0

0 10 20 30 40 50

V

Drain-to-Source Voltage (V)

DS,

Fig 12. Typical C

OSS

100μsec

1msec

10msec

DC

Stored Energy

Fig 13. Typical On-Resistance vs. Drain Current

IRFS7437PbF/IRFSL7437PbF

1

D = 0.50

)

C

0.1

J h

t Z (

e s n o

0.01

p s e

R l a

m

r e

0.001

h T

0.0001

1E-006 1E-005 0.0001 0.001 0.01 0.1

1000

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

)

A

(

t

100

n

e

r

u

C

e

h

c

n

a

l

a

10

v

A

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25°C and Tstart = 150°C. (Single Pulse)

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

Fig 15. Typical Avalanche Current vs.Pulsewidth

350

TOP Single Pulse

300

) J

m

( y

250

g

r e n E

200

e h c n a

150

l a v A ,

100

R A

E

50

0

25 50 75 100 125 150 175

BOTTOM 1% Duty Cycle ID = 100A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy vs. Temperature

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse)

tav (sec)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

. This is validated for every part type.

jmax

is not exceeded.

jmax

3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.

4. P

= Average power dissipation per single avalanche pulse.

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

IRFS7437PbF/IRFSL7437PbF

4.5

) V

4.0

( e

g a

t

l

3.5

o V

d

l o

3.0

h s e

r h

t e

t a

G ,

) h

t

( S G

V

ID = 150μA

2.5 ID = 1.0mA

ID = 1.0A

2.0

1.5

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 17. Threshold Voltage vs. Temperature

10

IF = 100A

VR = 34V

8

TJ = 25°C

TJ = 125°C

6

) A

(

R R

I

4

2

10

IF = 60A

VR = 34V

8

TJ = 25°C

TJ = 125°C

6

) A

(

R R

I

4

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 18 - Typical Recovery Current vs. dif/dt

140

IF = 60A

120

VR = 34V

TJ = 25°C

100

TJ = 125°C

) C

80

n

(

R R

60

Q

40

20

0

0 200 400 600 800 1000

diF /dt (A/μs)

140

120

100

) C

80

n

(

R R

60

Q

40

20

0

0 200 400 600 800 1000

Fig. 21 - Typical Stored Charge vs. dif/dt

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dtFig. 19 - Typical Recovery Current vs. dif/dt

IF = 100A

VR = 34V

TJ = 25°C

TJ = 125°C

diF /dt (A/μs)

IRFS7437PbF/IRFSL7437PbF

A

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test



+

V

DD

G

+

-

Re-Applied Voltage

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

20V

V

GS

Fig 23a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 23b. Unclamped Inductive Waveforms

R

D.U.T.

D

+

V

DD

-

V

DS

Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2μF

12V

V

GS

50KΩ

3mA

.3μF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

G

Current Sampling Resistors

Fig 25a. Gate Charge Test Circuit

I

D

Qgs1

Qgs2 Qgd Qgodr

Fig 25b. Gate Charge Waveform

2

D

Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

IRFS7437PbF/IRFSL7437PbF

D2Pak (TO-263AB) Part Marking Information

INTERNATIONAL RECTIFIER LOGO

ASSEMBLY LOT CODE

IRFS7437

PYWW?

LC L C

PART NUMBER

DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE

OR

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

INTERNATIONAL RECTIFIER LOGO

ASSEMBLY LOT CODE

IRFS7437

YWWP

LC LC

PART NUMBER

DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IRFS7437PbF/IRFSL7437PbF

TO-262 Part Marking Information

INTERNATIONAL RECTIFIER LOGO

ASSEMBLY LOT CODE

IRFSL7437

PYWW?

LC LC

PART NUMBER

OR

DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE

INTERNATIONAL RECTIFIER LOGO

ASSEMBLY LOT CODE

IRFSL7437

YWWP

LC LC

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

PART NUMBER

DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE

D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

IRFS7437PbF/IRFSL7437PbF

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

FEED DIRECTION

330.00 (14.173) MAX.

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

13.50 (.532)

12.80 (.504)

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) MIN.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

3

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

30.40 (1.197) MAX.

4

IRFS7437PbF/IRFSL7437PbF

Industrial

MS L1

Date

Comment

•

Updated data sheet based on corporate template.

•

Updated typo on the fig.19 and fig.21, unit of y-axis from "A" to "nC" on page7.

•

Updated package outline and part marking on page 9 & 10.

Qualificat ion information

Qualific ation level

Moisture Sensitivity Level

RoHS c ompliant

†

††

Yes

†††

guidelines)

(per JE DE C J-S T D-020D

†††

)

(per JEDEC JESD47F

D2Pak

TO-262

 Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

 Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

Revision History

4/30/2014

1/6/2015

•

Updated E

•

Updated note 9 “Limited by T

= 802mJ on page 2

AS (L =1mH)

, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 40A, VGS =10V”. on page 2

Jmax

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/