Page 1
PD - 94114
PROVISIONAL
SMPS MOSFET
IRFB42N20D
IRFS42N20D
IRFSL42N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 300
V
GS
dv/dt Peak Diode Recovery dv/dt TBD V/ns
T
J
T
STG
Pulsed Drain Current 170
Linear Derating Factor 2 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 260 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
R
DS(on)
max I
200V 0.055Ω 42.6A
TO-220AB
IRFB42N20D
D2Pak
IRFS42N20D
TO-262
IRFSL42N20D
°C
D
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes through are on page 6
www.irf.com 1
03/05/01
Page 2
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
DS(on)
V
GS(th)
I
DSS
I
GSS
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– TBD ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.055 Ω VGS = 10V, ID = 25.5A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
V
= -30V
GS
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– TBD ––– VGS = 0V, VDS = 0V to 160V
oss
Forward Transconductance TBD ––– ––– SVDS = 25V, ID = 25.5A
Total Gate Charge ––– 103 ––– ID = 25.5A
Gate-to-Source Charge ––– 26 ––– nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 48 ––– VGS = 10V
Turn-On Delay Time ––– TBD ––– VDD = 100V
Rise Time ––– TBD ––– ID = 25.5A
Turn-Off Delay Time ––– TBD ––– RG = TBDΩ
ns
Fall Time ––– TBD ––– VGS = 10V
Input Capacitance ––– 3470 ––– VGS = 0V
Output Capacitance ––– 560 ––– VDS = 25V
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
Output Capacitance ––– TBD ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– TBD ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– TBD mJ
Avalanche Current ––– 25.5 A
Repetitive Avalanche Energy ––– 30 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 0.5
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient ––– 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
42.6
170
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25.5A, VGS = 0V
Reverse Recovery Time ––– TBD TBD ns TJ = 25°C, IF = 25.5A
Reverse RecoveryCharge ––– 2.4 3.6 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com
D
S
Page 3
PROVISIONAL
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A
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
.415
2.87 (.113
2.62 (.103
15.24 (.600
14.84 (.584
14.09 (.555
13.47 (.530
10.54
10.29 (.405
1 2 3
4
6.47 (.2 5 5
6.10 (.2 4 0
1.15 (.045
MIN
4.06 (.160
3.55 (.140
3.78 (.149
3.54 (.139
- A -
IRFB/IRFS/IRFSL42N20D
4.69 (.1 8 5
4.20 (.1 6 5
- B -
1.32 (.052
1.22 (.048
LEAD ASSIGNMENTS
1 - G AT E
2 - D RA IN
3 - S OU RC E
4 - D RA IN
0.93 (.037
3X
1.40 (.0 5 5
3X
1.15 (.0 4 5
2.54 (.100
NOTES:
1 DIMEN S IONING & TO LE R A N C ING P ER ANS I Y14.5M, 1982. 3 OUTL INE C ONFORMS TO JED EC O U T LINE TO -220A B.
2 C O NTR O L L ING D IME NS IO N : INC H 4 H E A T S INK & L EA D M E A S UR E M E N T S D O N OT INCLUDE BURRS.
2X
0.69 (.027
0.36 (.014) M B A M
0.55 (.022
3X
0.46 (.018
2.92 (.115
2.64 (.104
TO-220AB Part Marking Information
EXAM PLE : THIS IS AN IRF1010
W ITH A S S EM B L Y
LOT C OD E 9 B 1 M
INTERN ATIONAL
R E C T IF IE R
LOG O
A S S E MB L Y
LOT C O DE
IRF1010
9246
9B 1 M
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
www.irf.com 3
Page 4
IRFB/IRFS/IRFSL42N20D
A
D2Pak Package Outline
PROVISIONAL
10.54 (.415)
1.40 (.055)
MA X.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
2
D
Pak Part Marking Information
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNM E N TS
1 - G A TE
2 - D RAIN
3 - SOURCE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIE R
LO G O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1M
PART NUMB ER
DATE CODE
(Y Y W W )
YY = YEAR
WW = WEEK
4 www.irf.com
Page 5
PROVISIONAL
TO-262 Package Outline
IRFB/IRFS/IRFSL42N20D
TO-262 Part Marking Information
www.irf.com 5
Page 6
IRFB/IRFS/IRFSL42N20D
D2Pak Tape & Reel Information
TRR
4.10 (.161)
3.90 (.153)
FEED DIRECTION
TRL
FEED DIRECTION
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
PROVISIONAL
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.60 (.063)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609)
15.22 (.601)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COMFO RM S TO EIA-418.
2. CO NTROLLING D IME NSION: MIL LIMETER.
3. DIMENSION M EAS URED @ HU B.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
27.40 (1.079)
23.90 (.941)
4
26.40 (1.039)
24.40 (.961)
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
C
eff. is a fixed capacitance that gives the same charging time
Starting T
RG = TBDΩ, I
I
SD
= 25°C, L = TBDmH
J
AS
≤ 25.5A, di/dt ≤ TBDA/µs, V
= 25.5A.
DD
≤ V
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
This is only applied to TO-220AB package
TJ ≤ 175°C
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
4
DSS
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 9/00
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