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IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 500
(Ω)V
R
DS(on)
(Max.) (nC) 19
Q
g
(nC) 3.3
Q
gs
(nC) 13
Q
gd
Configuration Single
DPAK
(TO-252)
D
IPAK
(TO-251)
D
= 10 V 3.0
GS
G
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR420, SiHFR420)
• Straight Lead (IRFU420, SiHFU420)
• Available in Tape and Reel
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
S
G
S
D
G
N-Channel MOSFET
S
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR420-GE3 SiHFR420TR-GE3
Lead (Pb)-free
SnPb
Note
a. See device orientation.
IRFR420PbF IRFR420TRPbF
SiHFR420-E3 SiHFR420T-E3
IRFR420 IRFR420TR
SiHFR420 SiHFR420T
a
SiHFR420TRL-GE3aSiHFR420TRR-GE3aSiHFU420-GE3
a
IRFR420TRLPbFa IRFR420TRRPbFa IRFU420PbF
a
SiHFR420TL-E3a - SiHFU420-E3
a
IRFR420TRLa IRFR420TRRa IRFU420
a
SiHFR420TLa - SiHFU420
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 1.5
C
DS
± 20
GS
I
D
IDM 8.0
Linear Derating Factor 0.33
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
e
b
a
a
= 25 °C
e
c
C
TA = 25 °C 2.5
E
AS
I
AR
E
AR
P
D
dV/dt 3.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 Ω, IAS = 2.4 A (see fig. 12).
b. V
DD
c. ISD ≤ 2.4 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91275 www.vishay.com
S10-1135-Rev. C, 10-May-10 1
500
2.4
0.020
400 mJ
2.4 A
4.2 mJ
42
- 55 to + 150
d
V
AT
W/°C
W
°C
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IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
Note
a. When mounted on 1” square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com Document Number: 91275
2 S10-1135-Rev. C, 10-May-10
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID =1.4 A
DS(on)
fs
iss
-92-
oss
-37-
rss
g
--
gs
--
gd
d(on)
r
-33-
d(off)
-16-
f
D
V
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
die contact
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs
- 110
-50
°C/W
-3.0
VGS = 0 V, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
--3.0Ω
VDS = 50 V, ID = 1.4 A 1.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 2.1 A, VDS = 400 V,
I
= 10 V
D
see fig. 6 and 13
b
- 360 -
--
19
3.3
13
-8.0-
= 250 V, ID = 2.1 A,
V
DD
= 18 Ω, RD = 120 Ω, see fig. 10
g
G
G
TJ = 25 °C, IS = 2.4 A, VGS = 0 V
b
D
S
D
S
b
-8.6-
-4.5-
-7.5-
--2.4
--8.0
--1.6V
- 260 520 ns
b
- 0.70 1.4 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
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IRFR420, IRFU420, SiHFR420, SiHFU420
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 -Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91275 www.vishay.com
S10-1135-Rev. C, 10-May-10 3
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IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91275
4 S10-1135-Rev. C, 10-May-10
Page 5
IRFR420, IRFU420, SiHFR420, SiHFU420
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vishay Siliconix
R
D.U.T.
D
+
-
t
t
d(off)
f
V
DS
V
GS
R
g
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
t
d(on)
r
Fig. 10b - Switching Time Waveforms
V
DD
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Var y tp to obtain
required I
AS
R
V
L
DS
t
p
g
D.U.T.
I
AS
+
V
DD
-
V
DS
V
DS
V
DD
10 V
t
p
0.01 Ω
I
AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91275 www.vishay.com
S10-1135-Rev. C, 10-May-10 5
Page 6
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
10 V
V
Q
G
Q
GS
G
Q
GD
12 V
V
GS
0.2 µF
50 kΩ
3 mA
0.3 µF
D.U.T.
+
-
Charge
I
G
Current sampling resistors
I
D
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
V
DS
www.vishay.com Document Number: 91275
6 S10-1135-Rev. C, 10-May-10
Page 7
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
R
g
Driver gate drive
P.W.
+
-
Period
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
• dV/dt controlled by R
• Driver same type as D.U.T.
•
I
controlled by duty factor “D”
SD
• D.U.T. - device under test
-
D =
g
P.W.
Period
+
+
V
DD
-
V
= 10 Va
GS
D.U.T. l
Reverse
recovery
current
D.U.T. V
Re-applied
voltage
Inductor current
Note
a. V
waveform
SD
Body diode forward
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
current
dI/dt
Diode recovery
dV/dt
V
DD
I
SD
Fig. 14 -For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91275
.
Document Number: 91275 www.vishay.com
S10-1135-Rev. C, 10-May-10 7
Page 8
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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