Page 1
SMPS MOSFET
PD - 94272
IRFR3911
IRFU3911
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max I
100V 0.115Ω 14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3911
I-Pak
IRFU3911
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.5 A
I
DM
PD @TC = 25°C Power Dissipation 56 W
V
GS
dv/dt Peak Diode Recovery dv/dt 7.1 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 0.37 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.7
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient ––– 110
Notes through are on page 10
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01/22/02
Page 2
IRFR3911/IRFU3911
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 130 ––– VGS = 0V, VDS = 0V to 80V
oss
Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.115 Ω VGS = 10V, ID = 8.4A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 20
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
µA
nA
= 100V, VGS = 0V
V
DS
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 9.6 ––– ––– SVDS = 50V, ID = 8.4A
Total Gate Charge ––– 21 32 ID = 8.4A
Gate-to-Source Charge ––– 4.3 6.5 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– 6.6 9.9 VGS = 10V
Turn-On Delay Time ––– 7.9 ––– VDD = 500V
Rise Time ––– 26 ––– ID = 8.4A
Turn-Off Delay Time ––– 52 ––– RG = 22Ω
ns
Fall Time ––– 25 ––– VGS = 10V
Input Capacitance ––– 740 ––– VGS = 0V
Output Capacitance ––– 110 ––– VDS = 25V
Reverse Transfer Capacitance ––– 18 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 700 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 61 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 68 mJ
Avalanche Current ––– 8.4 A
Repetitive Avalanche Energy ––– 0.0056 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
14
56
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V
Reverse Recovery Time ––– 86 ––– ns TJ = 25°C, IF = 8.4A
Reverse RecoveryCharge ––– 290 ––– nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
Page 3
IRFR3911/IRFU3911
(
)
100
10
1
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100.00
TJ = 25°C
)
(Α
4.5V
TJ = 175°C
100
10
1
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
2.0
14A
I =
D
4.5V
10.00
, Drain-to-Source Current
D
I
1.00
3.0 5.0 7.0 9.0 11.0 13.0 15.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
Vs. Temperature
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Page 4
IRFR3911/IRFU3911
)
10000
1000
100
C, Capacitance(pF)
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
Coss
Crss
10
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.00
SHORTED
ds
12
D
I =
8.4A
10
7
5
2
GS
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25
Q , Total Gate Charge (nC
G
V = 80V
DS
V = 50V
DS
V = 20V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TJ = 175°C
100
10.00
10
100µsec
TJ = 25°C
1.00
, Reverse Drain Current (A)
SD
I
0.10
0.0 0.5 1.0 1.5 2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
V
GS
= 0V
1
, Drain-to-Source Current (A)
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
1msec
10msec
Forward Voltage
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IRFR3911/IRFU3911
(
)
R
D.U.T.
D
+
V
DD
-
15
12
R
V
DS
V
GS
G
9
6
D
I , Drain Current (A)
3
Fig 10a. Switching Time Test Circuit
V
DS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
90%
0
25 50 75 100 125 150 175
T , Case Temperature
C
Fig 9. Maximum Drain Current Vs.
C
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
thJC
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRFR3911/IRFU3911
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
DD
120
TOP
96
72
48
24
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
°
I
D
3.4A
5.9A
8.4A
Current Regulator
Same Type as D.U.T.
Q
G
12V
Q
GS
V
G
Q
GD
V
GS
Charge
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
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Page 7
IRFR3911/IRFU3911
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
-
VGS=10V
V
DD
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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Page 8
IRFR3911/IRFU3911
IRFU120
916A
LOT CODE
ASSEMBLY
EXAMPLE:
WITH ASS EMBLY
THIS IS AN IRFR120
YEAR 9 = 1999
DATE C ODE
LINE A
WEE K 16
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 16, 1999
LOT CODE 1234
PART NUMBER
INTERNAT IONAL
LOGO
RECTIFIER
3412
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
5.46 (.215)
5.21 (.205)
1.02 (.040)
1.64 (.025)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
- B -
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.38 (.094)
2.19 (.086)
10.42 (.410 )
9.40 (.370)
NOTES:
1 DIMENSION ING & TO LE RANCING PE R ANSI Y 14.5M, 1982 .
2 CONTROLLING DIMENSION : INCH.
3 C O N F O RM S T O JED E C O U TLINE TO-25 2AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.0 06).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
M IN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - S O U R CE
4 - D R A IN
D-Pak (TO-252AA) Part Marking Information
8 www.irf.com
Page 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
IRFR3911/IRFU3911
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
2X
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.2 45)
5.97 (.2 35)
9.65 (.380)
8.89 (.350)
0.89 (.035)
3X
0.64 (.025)
0.25 ( .01 0) M A M B
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CON F OR MS T O JE DE C O UTL INE T O - 252AA.
4 DIME N SIONS SH O W N ARE BEFO RE SOLD E R DIP,
S O LD E R DIP MAX. +0.16 (.006).
1.14 (.04 5)
0.89 (.03 5)
0.58 (.023)
0.46 (.018)
I-Pak (TO-251AA) Part Marking Information
LEAD ASSIGNMEN TS
1 - G ATE
2 - D RAIN
3 - SOURCE
4 - D RAIN
EXAMPLE:
THIS IS AN IRFR120
WI TH ASSEMBLY
LOT CODE 5678
A SSEMBLED ON WW 19, 1999
IN TH E ASSEMBL Y LINE "A"
INTERNAT IONAL
RECTIFIER
LOGO
ASSEMBLY
IRFU120
919A
56 78
PART NUMBER
DATE C ODE
YEAR 9 = 1999
WEE K 19
LINE A
LOT CODE
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Page 10
IRFR3911/IRFU3911
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. CONTROLLING DIMENSION : M ILLIM ETER.
2. ALL DIMENSIONS ARE SHO WN IN MILLIM ETERS ( INCHES ).
3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
13 INCH
NOTES :
1. OUTLINE CONFO RMS TO EIA-481.
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
16 mm
16.3 ( .641 )
15.7 ( .619 )
FEED DIR ECTION
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
C
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 1.9mH
J
AS
≤ 8.4A, di/dt ≤ 320A/µs, V
= 8.4A.
DD
≤ V
(BR)DSS
,
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
TJ ≤ 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
DSS
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
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