Datasheet irfr3504 Datasheet

PD - 94499A

AUTOMOTIVE MOSFET

IRFR3504 IRFU3504

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

G

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 87 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 61 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 30 I

DM

PD @TC = 25°C Power Dissipation 140 W

V

GS

E

AS

E

(tested) Single Pulse Avalanche Energy Tested Value 480

AS

I

AR

E

AR

T

J

T

STG

Pulsed Drain Current  350

Linear Derating Factor 0.92 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 240 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy mJ Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

HEXFET® Power MOSFET

D

V

= 40V

DSS

R

S

D-Pak

IRFR3504

DS(on)

I

D

= 9.2mΩ

= 30A

I-Pak

IRFU3504

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

R

θJA

Junction-to-Case ––– 1.09 Junction-to-Ambient (PCB mount) ––– 50 °C/W Junction-to-Ambient ––– 110

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com 1

12/11/02

IRFR/U3504

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 870 ––– VGS = 0V, VDS = 0V to 32V

oss

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 7.8 9.2 mΩ VGS = 10V, ID = 30A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA Forward Transconductance 40 ––– ––– S VDS = 10V, ID = 30A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 40V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– 48 71 ID = 30A Gate-to-Source Charge ––– 12 18 nC VDS = 32V Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 10V Turn-On Delay Time ––– 11 ––– VDD = 20V Rise Time ––– 53 ––– ID = 30A Turn-Off Delay Time ––– 36 ––– RG = 6.8Ω

ns

Fall Time ––– 22 ––– VGS = 10V  Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact Input Capacitance ––– 2150 ––– VGS = 0V Output Capacitance ––– 580 ––– VDS = 25V Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz, See Fig. 5 Output Capacitance ––– 2830 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 510 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

87

350

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 30A, VGS = 0V  Reverse Recovery Time ––– 53 80 ns TJ = 25°C, IF = 30A, VDD = 20V Reverse Recovery Charge ––– 86 130 nC di/dt = 100A/µs  Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2 www.irf.com

D

S

IRFR/U3504

1000

TOP 15V

)

100

A

( t n e

r

10

u C e

c

r

1

u o S

o

t

n

0.1

i a

r D

,

D

0.01

I

4.0V

BOTTOM 4.0V

20µs PULSE WIDTH

0.001

0.1 1 10 100 1000

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000.00

VGS

10V

7.0V

6.0V

5.5V

5.0V

4.5V

1000

TOP 15V

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

4.0V

BOTTOM 4.0V

20µs PULSE WIDTH Tj = 175°C

0.1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

80

VGS

10V

7.0V

6.0V

5.5V

5.0V

4.5V

)

Α

(

t

100.00

n e

r

r u

C e

c

r

10.00

u o S

o

t

n

i a

r

1.00

D ,

D

I

TJ = 25°C

V

DS

TJ = 175°C

= 25V

20µs PULSE WIDTH

0.10

2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

70

S

( e

c

60

n a

t c u

50

d n o c s

40

n a

r T

30

d

r a

w

r

20

o F ,

s

f

10

G

TJ = 25°C

TJ = 175°C

V

= 25V

DS



20µs PULSE WIDTH

0

0 20 40 60 80 100 120

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRFR/U3504

100000

10000

) F p

( e c n a

t

i

1000

c a p a

C ,

C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

+ Cgd, C

+ C

gd

C

iss

C

oss

C

rss

SHORTED

ds

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

100

°

T = 175 C

J

10

°

T = 25 C

1

SD

I , Reverse Drain Current (A)

0.1

0.0 0.5 1.0 1.5 2. 0 2.5 3.0

V ,Source- to-Dr ain Voltage (V)

J

SD

V = 0 V

GS

12

I

=

30A

D

10

8

6

4

GS

2

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50

Q , Total Gate Charge (nC)

G

V = 32V

DS

V = 20V

DS

V = 8V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

10

i a

r D ,

D

I

1

1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

1msec

Tc = 25°C Tj = 175°C Single Pulse

10msec

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRFR/U3504

100

LIMITED BY PACKAGE

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

2.5

87A

I =

D

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Juncti on Temperature ( C)

J

Fig 10. Normalized On-Resistance

Vs. Temperature

V =

GS

°

10V

thJC

1

D = 0.50

0.20

P

1 2

DM

t

1

t

2

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Not es:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFR/U3504

A

15V

DRIVER

+

-

V

DD

R

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

500

TOP

400

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)

BOTTO M

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

I

D 12A 21A

30A

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

(

3.5

e g a

t

l o V

d

l

3.0

o h s e

r h

t

2.5

e

t a

G

) h

t

(

2.0

S G

V

1.5

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

10000

IRFR/U3504

1000

) A

( t n e

100

r

r u

C e

h c

10

n a

l a v A

1

0.1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Duty Cycle = Single Pulse

250

TOP Single Pulse BOTTOM 10% Duty Cycle

)

200

J m

( y

g

r e n

150

E e

h c n a

l

100

a v

A ,

R A

50

E

0

25 50 75 100 125 150 175

ID = 30A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

Fig 16. Maximum Avalanche Energy

Vs. Temperature

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

www.irf.com 7

IRFR/U3504

+

-

+

-

Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

D.U.T

+



-

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

+



V

DD

R

G

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

Re-Applied Voltage

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

V

DD

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

D-Pak (TO-252AA) Package Outline

,17(51$7,21$/

/2*

2

5(&7,

),(

5









,5)8



$

/27&2'

(

$66(0%/

<

(;$03

/(

:

,7+$66(0%/

<

7+,6,6

$1,5)5

<($5 





'$7(&2'(

/,1(

$

:((.

,17+($66(0%/</

,

1($



$66(0%/('



21::



/27&2'

(



3$5

7180%(

5

Dimensions are shown in millimeters (inches)

IRFR/U3504

5.46 (.215 )

5.21 (.205 )

1.02 (.040)

1.64 (.025)

1.52 (.060)

1.15 (.045)

1.14 (.045)

2X

0.76 (.030)

2.28 (.090)

6.73 (.265)

6.35 (.250)

- A -

4

1 2 3

1.27 (.050 )

0.88 (.035 )

6.22 (.245)

5.97 (.235)

- B -

0.89 (.035)

3X

0.64 (.025)

0.25 (.010) M A M B

4.57 (.180)

2.38 (.094)

2.19 (.086)

10.42 (.410)

9.40 (.37 0)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14. 5M, 1982.

2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OU TLINE TO- 252AA.

4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,

SOLD ER D IP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.02 3)

0.46 (.01 8)

6.45 (.245)

5.68 (.224)

0.51 (.02 0) MIN.

0.58 (.023)

0.46 (.018)

LEAD ASSIGNMENTS 1 - GAT E

2 - DRAIN 3 - SOURCE

4 - DRAIN

D-Pak (TO-252AA) Part Marking Information

www.irf.com 9

IRFR/U3504

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

5.46 (.215)

5.21 (.205)

1.52 (.060)

1.15 (.045)

- B -

2.28 (.090)

1.91 (.075)

1.14 (.045)

3X

0.76 (.030)

2.28 (.090)

6.73 (.265)

6.35 (.250)

- A -

4

1 2 3

3X

2X

1.27 (.050)

0.88 (.035)

6.22 (.245)

5.97 (.235)

9.65 (.380)

8.89 (.350)

0.89 (.035)

0.64 (.025)

0.25 (.010) M A M B

2.38 (.094)

2.19 (.086)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2 CONTROLLING DIMENSION : INCH.

3 C ONFORMS TO J EDEC OUTLINE TO-252AA.

4 D IMENSIONS SHOW N ARE BEF ORE SOLDER DIP,

SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

I-Pak (TO-251AA) Part Marking Information

LEAD ASSIGNMENTS

1 - GATE 2 - DRAIN

3 - SOURCE

4 - DRAIN

10 www.irf.com

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRR

IRFR/U3504

TRL

12.1 ( .476 )

11.9 ( .469 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

L = 0.52mH, RG = 25Ω, I

, starting TJ = 25°C,

Jmax

AS

= 30A, VGS =10V. Part not recommended for use above this value.

 I

≤ 30A, di/dt ≤ 170A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

 C

oss

as C

 Limited by T

8.1 ( .318 )

7.9 ( .312 )

16 mm

eff. is a fixed capacitance that gives the same charging time

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

DSS

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

,

 When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/02

www.irf.com 11