Datasheet irfr3418 Datasheet

Applications

l High frequency DC-DC converters

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design, (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

@ TC = 25°C

I

D

@ TC = 100°C

I

D

I

DM

PD @TC = 25°C

@TA = 25°C

P

D

dv/dt Peak Diode Recovery dv/dt T

J

T

STG

Drain-to-Source Voltage V

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation W

Maximum Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

c

@ 10V

GS

@ 10V

GS

e

V

DSS

80V

IRFR3418

IRFU3418

HEXFET® Power MOSFET

R

DS(on)

D-Pak

IRFR3418

Max.

± 20

70

-55 to + 175

300 (1.6mm from case )

Max I

14m

:

80

h

50

280

140

3.8

0.95

5.2

I-Pak

IRFU3418

PD - 94452

D

30A

A

V/ns

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

R

θJA

Junct ion-to-Case ––– 1.05

Junct ion-to-Ambient (PCB Mount) * ––– 40 °C/W

Junct ion-to-Ambient ––– 110

Notes  through  are on page 10

www.irf.com 1

09/12/02

IRFR/U3418

/

gy

(

)

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

gfs Forward Transconductance 66 ––– ––– S

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Avalanche Characteristics

E

AS

I

AR

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage 80 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.08 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 11.5 14

Gate Threshold Voltage 3.5 ––– 5.5 V

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Parameter Min. Typ. Max. Units

Total Gate Charge ––– 63 94

Gate-to-Source Charge ––– 23 ––– nC

Gate-to-Drain ("Miller") Charge ––– 23 –––

Turn-On Delay Time ––– 24 –––

Rise Time ––– 72 –––

Turn-Off Delay Time ––– 41 ––– ns

Fall Time ––– 27 –––

Input Capacitance ––– 3510 –––

Output Capacitance ––– 330 –––

Reverse Transfer Capacitance ––– 190 ––– pF

Output Capacitance ––– 1220 –––

Output Capacitance ––– 240 –––

Effective Output Capacitance ––– 360 –––

Parameter Units

Single Pulse Avalanche Ener

Avalanche Current

c

dh

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 70 A

(Body Diode) Pulsed Source Current ––– ––– 280

Body Diode

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 57 ––– ns

Reverse Recovery Charge ––– 130 ––– nC

Forward Turn-On Time

ch

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Typ.

–––

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

V

mΩ

= 10V, ID = 18A

GS

VDS = VGS, ID = 250µA

V

= 80V, VGS = 0V

DS

= 64V, VGS = 0V, TJ = 150°C

V

DS

V

= 20V

GS

= -20V

V

GS

Conditions

VDS = 25V, ID = 18A

I

= 18A

D

= 40V

V

DS

VGS = 10V

f

VDD = 40V

I

= 18A

D

= 6.8Ω

R

G

VGS = 10V

f

VGS = 0V

V

= 25V

DS

ƒ = 1.0MHz

= 0V, VDS = 1.0V, ƒ = 1.0MHz

V

GS

= 0V, VDS = 64V, ƒ = 1.0MHz

V

GS

V

= 0V, VDS = 0V to 64V

GS

Max.

260

18

Conditions

MOSFET symbol

showing the integral reverse

p-n junction diode.

= 25°C, IS = 18A, VGS = 0V

T

J

TJ = 150°C, IF = 18A, VDD = 25V di/dt = 100A/µs

f

= 1mA

D

f

G

e

mJ

A

D

S

f

2 www.irf.com

IRFR/U3418

1000

TOP 15V

100

) A

( t n e

r

10

r u

C e

c

r

1

u o S

o

t

n

0.1

i a

r D

,

D

I

0.01

6.0V

BOTTOM 6.0V

20µs PULSE WIDTH Tj = 25°C

0.001

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1000.00

VGS

10V

9.0V

8.0V

7.5V

7.0V

6.5V

1000

TOP 15V

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

6.0V

BOTTOM 6.0V

20µs PULSE WIDTH Tj = 175°C

0.1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

I =

D

70A

VGS

10V

9.0V

8.0V

7.5V

7.0V

6.5V

)

Α

(

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

100.00

10.00

TJ = 175°C

1.00

TJ = 25°C

0.10

V

= 25V

DS

20µs PULSE WIDTH

0.01

5 6 7 8 9 10 11 12 13 14 15

2.0

1.5

1.0

(Normalized)

, Drain-to-Source On Resistance

0.5

DS(on)

R

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (°C)

V =

GS

10V

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3

IRFR/U3418

100000

10000

) F p

( e c n a

t

i

1000

c a p a

C ,

C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

gs

gd

ds

+ Cgd, C

+ C

iss

C

rss

C

oss

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.00

12.0 ID= 18A

)

10.0

V

( e

g a

t

l

8.0

C

iss

C

oss

C

rss

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

0.0 0 10203040506070

Q

VDS= 64V

VDS= 40V

VDS= 16V

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

) A

(

100.00

t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

10.00

1.00

0.10

TJ = 175°C

TJ = 25°C

0.0 0.5 1.0 1.5 2.0

VSD, Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

)

1000

A

( t n e

r

r u

C

100

e c

r u o S

-

10

o

t

n

i a

r D ,

1

D

I

TC = 25°C

Tj = 175°C Single Pulse

0.1

1 10 100 1000

Fig 8. Maximum Safe Operating Area

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Forward Voltage

4 www.irf.com

IRFR/U3418

+

-

R

D.U.T.

D

V

DD

80

LIMITED BY PACKAGE

60

40

R

V

DS

V

GS

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

I , Drain Current (A)

20

Fig 10a. Switching Time Test Circuit

V

DS

90%

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

Fig 9. Maximum Drain Current Vs.

°

10% V

GS

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

10

thJC

1

D = 0.50

0.20

P

1 2

DM

t

1

t

2

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFR/U3418

A

15V

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

600

TOP

500

400

300

200

, Single Pulse Avalance Energy (mJ)

100

AS

E

0

25 50 75 100 125 150 175

BOTTOM

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

I

D

7.3A 13A 18A

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

6 www.irf.com

DS

IRFR/U3418

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

Driver Gate Drive

P.W.

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P. W .

VGS=10V

V

DD

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFET® Power MOSFETs

www.irf.com 7

IRFR/U3418

TO-251AA (I-Pak) Package Outline

Dimensions are shown in millimeters (inches)

5.46 (.215)

5.21 (.205)

1.52 (.060)

1.15 (.045)

- B -

2.28 (.090)

1.91 (.075)

1.14 (.045)

3X

0.76 (.030)

2.28 (.090)

6.73 (.265)

6.35 (.250)

- A -

4

1 2 3

3X

2X

1.27 (.050)

0.88 (.035)

6.22 (.245)

5.97 (.235)

9.65 (.380)

8.89 (.350)

0.89 (.035)

0.64 (.025)

0.25 (.010) M A M B

2.38 (.094)

2.19 (.086)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2 CONTROLLING DIMENSION : INCH.

3 C ONFORMS TO J EDEC OUTLINE TO-25 2AA.

4 D IMENSION S SHOW N ARE BEF ORE SOLDER DIP,

SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

TO-251AA (I-Pak) Part Marking Information

LEAD ASSIGNMENTS

1 - GATE 2 - DRAIN

3 - SOURCE

4 - DRAIN

P

A

T

R

U

N

E

B

R

E

X

A

M

P

E

:

L

I

H

S

T

S

I W L A I

A

N

T

H

I

A

S

T

O

C

D

S

E

M

B

L

A

S

E

H

T

N

2

0

1

R

F

R

I

E

Y

M

L

B

E

8

5

6

7

E

D

N

O

S

E

L

B

M

W Y

9

,

1

9

W L

9

1

9

I

N

E

"

A

"

T

N

E

N

R

I

A

L

N

O

T

I

R

E

I

C

E

R

F

T

I

L

G

O

A

S

O

L

Y

L

B

S

E

M

T

C

E

D

O

U

1

I

F

0

2

R

1

9

A

9

8

7

6

5

D Y W L

I

M

C

A

T

E

D

O

E

A

=

1

9

R

E

K

N

E

9

1

A

8 www.irf.com

TO-252AA (D-Pak) Package Outline

I

N

T

E

R

N

A

T

I

O

N

A

L

O

G

O

R

E

C

T

I

F

I

E

R

3

4

1

2

I

R

F

U

1

2

0

9

1

6

A

L

O

T

C

O

D

E

A

S

E

M

B

L

Y

E

X

A

M

P

L

E

:

W

I

T

H

A

S

E

M

B

L

Y

T

H

I

S

I

S

A

N

I

R

F

R

1

2

0

Y

E

A

R

9

=

1

9

D

A

T

E

C

O

D

E

L

I

N

E

A

W

E

K

1

6

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

A

"

A

S

E

M

B

L

E

D

O

N

W

1

6

,

1

9

L

O

T

C

O

D

E

1

2

3

4

P

A

R

T

N

U

M

B

E

R

Dimensions are shown in millimeters (inches)

IRFR/U3418

5.46 (.215 )

5.21 (.205 )

1.02 (.040)

1.64 (.025)

1.52 (.060)

1.15 (.045)

1.14 (.045)

2X

0.76 (.030)

2.28 (.090)

6.73 (.265)

6.35 (.250)

- A -

4

1 2 3

1.27 (.050 )

0.88 (.035 )

6.22 (.245)

5.97 (.235)

- B -

0.89 (.035)

3X

0.64 (.025)

0.25 (.010) M A M B

4.57 (.180)

2.38 (.094)

2.19 (.086)

10.42 (.410)

9.40 (.37 0)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JE DEC OUTLINE TO-252AA.

4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,

SOLD ER DIP MAX. +0. 16 (.0 06).

1.14 (.045)

0.89 (.035)

0.58 (.02 3)

0.46 (.01 8)

6.45 (.245)

5.68 (.224)

0.51 (.02 0) MIN.

0.58 (.023)

0.46 (.018)

LEAD ASSIGNMENTS

1 - GATE

2 - DRAIN

3 - SOURCE 4 - DRAIN

TO-252AA (D-Pak) Part Marking Information

www.irf.com 9

IRFR/U3418

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRR

TRL

12.1 ( .47 6 )

11.9 ( .46 9 )

NOTES :

1. CONTROLLIN G DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

FEED DIRECT ION

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C.

= 25°C, L = 1.6mH

J

= 18A.

AS

≤ 18A, di/dt ≤ 350A/µs, V

DD

≤ V

(BR)DSS

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

16 mm

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 Calculated continuous current based on maximum allowable

,

junction temperature. Package limitation current is 30A.

oss

while V

is rising from 0 to 80% V

DS

DSS

* When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/02

10 www.irf.com