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irfr3412
Datasheet
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Datasheet irfr3412 Datasheet

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Page 1
PD - 94373
IRFR3412
SMPS MOSFET
IRFU3412
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching
V
100V 0.025Ω 48A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34 A I
DM
PD @TC = 25°C Power Dissipation 140 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.4 V/ns T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 0.95 W/°C Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 175 °C Storage Temperature Range Soldering Temperature, for 10 second 300(1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
R
DS(on)
max I
D-Pak I-Pak IRFR3412 IRFU3412
D
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V t
rr
Q I
RRM
t
on
SD
rr
Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V Reverse Recovery Time ––– 68 100 ns TJ = 125°C, IF = 29A Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs Reverse RecoveryCurrent ––– 4.5 6.8 A Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
––– –––
48
190
showing the
A
p-n junction diode.
G
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D
S
1/22/02
Page 2
IRFR/U3412
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 270 ––– VGS = 0V, VDS = 0V to 80V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θJA
R
θJA
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting T
I
AS
I
SD
TJ ≤ 150°C
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com
Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω VGS = 10V, ID = 29A Gate Threshold Voltage 3. 5 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 1.0 ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 95V, VGS = 0V
DS
= 20V
GS
V
= -20V
GS
Parameter Min. Typ. Max. Units Conditions Forward Transconductance 25 ––– ––– SVDS = 50V, ID = 29A Total Gate Charge ––– 59 89 ID = 29A Gate-to-Source Charge ––– 21 32 nC VDS = 50V Gate-to-Drain ("Miller") Charge ––– 17 26 VGS = 10V, Turn-On Delay Time ––– 19 ––– VDD = 50V Rise Time ––– 68 ––– ID = 29A Turn-Off Delay Time ––– 44 ––– RG = 6.8Ω
ns
Fall Time ––– 37 ––– VGS = 10V Input Capacitance ––– 3430 ––– VGS = 0V Output Capacitance ––– 270 ––– VDS = 25V Reverse Transfer Capacitance ––– 150 ––– pF ƒ = 1.0MHz Output Capacitance ––– 1040 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 170 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 160 mJ Avalanche Current ––– 29 A Repetitive Avalanche Energy ––– 14 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 1.05 Junction-to-Ambient (PCB mount)* ––– 50 °C/W Junction-to-Ambient ––– 110
Pulse width ≤ 300µs; duty cycle ≤ 2%. C
eff. is a fixed capacitance that gives the same charging time
= 25°C, L = 0.38mH, RG = 25Ω,
J
= 29A, (See Figure 12a)
≤ 29A, di/dt ≤ 420A/µs, V
DD
≤ V
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Page 3
IRFR/U3412
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
1000
VGS
TOP
15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
V , Drain-to-Source Voltage (V)
DS
4.5V
20µs PULSE WIDTH T = 25 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
V , Drain-to-Source Voltage (V)
DS
4.5V
20µs PULSE WIDTH T = 175 C
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
48A
2.5
100
°
T = 175 C
J
10
2.0
1.5
(Normalized)
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate -to -So u rce V o lta ge (V )
GS
Fig 3. Typical Transfer Characteristics
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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Page 4
IRFR/U3412
100000
) F
10000
p
( e
c
n
a
t
i
c
a
p
a C
1000
, C
100
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
SHORTED C
= C
rss
C
= C
oss
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.0
) A
(
t
100.0
n
e
r
r
u C n
i
a
r D e
s
r
e
v
e R
,
D S
I
TJ = 175°C
10.0
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ = 25°C
VSD, Source-toDrain V oltage (V)
gd
ds
+ Cgd, C
gs
+ C
gd
V
GS
= 0V
ds
20
ID= 29A
) V
(
16
e
g
a
t
l
o V
12
e
c
r
u
o S
-
o
8
t
-
e
t
a G
,
S
4
G
V
0
0 20406080100
VDS= 80V VDS= 50V
VDS= 20V
Q
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
) A
(
t
100
n
e
r
r
u C e
c
r
10
u
o S
-
o
t
-
n
i
a
r
1
D ,
D
I
Tc = 25°C Tj = 175°C Single Pulse
0.1 1 10 100 1000
V
OPERATION IN THIS AREA LIMITED BY RDS(on)
, Drain-toSource V oltage (V)
DS
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 5
50
LIMITED BY PACKAGE
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFR/U3412
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10% V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
10
thJC
1
D = 0.50
0.20 P
1 2
DM
t
1
t
2
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRFR/U3412
15V
DRIVER
+
V
DD
-
R
G
V
20V
V
DS
GS
L
D.U.T
I
AS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
300
TOP
250
200
A
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
I
D
12A 21A 29A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
6 www.irf.com
DS
Page 7
IRFR/U3412
R V
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
controlled by Duty Factor "D"
SD
• D.U.T. - Device Under Test
Period
D =
G
Period
P.W.
+
-
VGS=10V
V
DD
*
D.U.T. ISDWaveform
Reverse Recovery Current
e-Applied
oltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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Page 8
IRFR/U3412
I
N
T
E
R
N
A
T
I
O
N
A
L
L
O
G
O
R
E
C
T
I
F
I
E
R
3
4
1
2
I
R
F
U
1
2
0
9
1
6
A
L
O
T
C
O
D
E
A
S
S
E
M
B
L
Y
E
X
A
M
P
L
E
:
W
I
T
H
A
S
S
E
M
B
L
Y
T
H
I
S
I
S
A
N
I
R
F
R
1
2
0
Y
E
A
R
9
=
1
9
9
9
D
A
T
E
C
O
D
E
L
I
N
E
A
W
E
E
K
1
6
I
N
T
H
E
A
S
S
E
M
B
L
Y
L
I
N
E
"
A
"
A
S
S
E
M
B
L
E
D
O
N
W
W
1
6
,
1
9
9
9
L
O
T
C
O
D
E
1
2
3
4
P
A
R
T
N
U
M
B
E
R
TO-252AA (D-Pak) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
10.42 (.410)
9.40 (.370)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIME NSIO N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
5.46 (.215)
5.21 (.205)
1.02 (.040)
1.64 (.025)
1.52 (. 060)
1.15 (. 045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
- B -
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
4.57 (. 180)
TO-252AA (D-Pak) Part Marking Information
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020) MIN.
0.58 (. 023)
0.46 (. 018)
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
8 www.irf.com
Page 9
I
R
F
U
1
2
0
9
1
9
A
R
E
C
T
I
F
I
E
R
L
O
G
O
I
N
T
E
R
N
A
T
I
O
N
A
L
A
S
S
E
M
B
L
Y
L
O
T
C
O
D
E
5
6
7
8
E
X
A
M
P
L
E
:
W
I
T
H
A
S
S
E
M
B
L
Y
T
H
I
S
I
S
A
N
I
R
F
R
1
2
0
W
E
E
K
1
9
L
I
N
E
A
Y
E
A
R
9
=
1
9
9
9
D
A
T
E
C
O
D
E
P
A
R
T
N
U
M
B
E
R
I
N
T
H
E
A
S
S
E
M
B
L
Y
L
I
N
E
"
A
"
A
S
S
E
M
B
L
E
D
O
N
W
W
1
9
,
1
9
9
9
L
O
T
C
O
D
E
5
6
7
8
TO-251AA (I-Pak) Package Outline
Dimensions are shown in millimeters (inches)
IRFR/U3412
5.46 (.21 5)
5.21 (.20 5)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
3X
2X
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
9.65 (.380)
8.89 (.350)
0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES: 1 DIMENSIONING & TOL E RA NCING PER ANSI Y 1 4. 5 M , 1982. 2 CONTROLLING DIM E NS I O N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
TO-251AA (I-Pak) Part Marking Information
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
www.irf.com 9
Page 10
IRFR/U3412
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
16.3 ( .641 )
15.7 ( .619 )
FEED DIRECTION
16 mm
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/02
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