Page 1
PD - 94392
IRFR24N15D
SMPS MOSFET
IRFU24N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 24
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A
I
DM
PD @TC = 25°C Power Dissipation 140 W
V
GS
dv/dt Peak Diode Recovery dv/dt 4.9 V/ns
T
J
T
STG
Pulsed Drain Current 96
Linear Derating Factor 0.92 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
V
DSS
R
DS(on)
max I
150V 95mΩ 24A
D-Pak
IRFR24N15D
I-Pak
IRFU24N15D
°C
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 1.1
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient ––– 110
Notes through are on page 10
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03/14/02
Page 2
IRFR24N15D/IRFU24N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 200 ––– VGS = 0V, VDS = 0V to 120V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Drain-to-Source Breakdown Voltage 150 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– 82 95 mΩ VGS = 10V, ID = 14A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 8.2 ––– ––– SVDS = 25V, ID = 14A
Total Gate Charge ––– 30 45 ID = 14A
Gate-to-Source Charge ––– 7.4 11 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– 17 26 VGS = 10V,
Turn-On Delay Time ––– 11 ––– VDD = 75V
Rise Time ––– 53 ––– ID = 14A
Turn-Off Delay Time ––– 19 ––– RG = 6.8Ω
ns
Fall Time ––– 15 ––– VGS = 10V
Input Capacitance ––– 890 ––– VGS = 0V
Output Capacitance ––– 220 ––– VDS = 25V
Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 1460 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 95 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 170 mJ
Avalanche Current ––– 14 A
Repetitive Avalanche Energy ––– 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
24
96
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 110 ––– ns TJ = 25°C, IF = 14A
Reverse RecoveryCharge ––– 450 ––– nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
Page 3
IRFR24N15D/IRFU24N15D
)
1000
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
, Drain-to-Source Current (A)
D
0.01
I
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100
T = 175 C
J
100
10
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
0.1
0.1 1 10 100
Tj = 175°C
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
24A
I =
D
°
2.5
10
1
°
D
I , Drain-to-Source Current (A)
0.1
T = 25 C
J
V = 50V
DS
20µs PULSE WIDTH
4 6 8 10 12 14 16
V , Gate-to-Source Voltage (V
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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Page 4
IRFR24N15D/IRFU24N15D
)
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
Ciss
+ Cgd, C
gd
Coss
100
C, Capacitance(pF)
Crss
10
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
12
I
=
14A
D
10
8
6
4
GS
2
V , Gate-to-Source Voltage (V)
0
0 5 10 15 20 25 30 35
Q , Total Gate Charge (nC
G
V = 120V
DS
V = 75V
DS
V = 30V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
°
T = 175 C
J
10
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.5 1.0 1.5 2.0 2.5
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
10
100µsec
1msec
1
, Drain-to-Source Current (A)
Tc = 25°C
D
I
Tj = 175°C
10msec
Single Pulse
0.1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
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25
)
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature( C
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFR24N15D/IRFU24N15D
R
D.U.T.
t
d(off)tf
D
+
V
DD
-
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
10
thJC
1
D = 0.50
0.20
P
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRFR24N15D/IRFU24N15D
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
DD
320
TOP
240
160
80
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting Tj, Junction Temperature ( C)
BOTTOM
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
5.9A
10A
14A
Current Regulator
Same Type as D.U.T.
Q
G
12V
Q
GS
V
G
Q
GD
V
GS
Charge
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
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Page 7
IRFR24N15D/IRFU24N15D
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
-
VGS=10V
V
DD
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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Page 8
IRFR24N15D/IRFU24N15D
IRFU120
916A
LOT CODE
ASSEMBLY
EXAMPL E:
WI TH ASSEMBLY
THIS IS AN IRFR120
YEAR 9 = 1999
DATE C ODE
LINE A
WEEK 16
IN THE ASSEMBLY LI NE "A"
A SSEMBLED ON WW 16, 1999
LOT CODE 1234
PART NUMBER
INTERNAT IONAL
LOGO
RECTIFIER
3412
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
5.46 (.215)
5.21 (.205)
1.02 (.040)
1.64 (.025)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
- B -
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.38 (.094)
2.19 (.086)
10.42 (.410 )
9.40 (.370)
NOTES:
1 DIMENSION ING & TO LE RANCING PE R ANSI Y 14.5M, 1982 .
2 CONTROLLING DIMENSION : INCH.
3 C O N F O R M S T O JE D E C O U T LINE TO- 252 AA .
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.0 06).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
M IN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
D-Pak (TO-252AA) Part Marking Information
8 www.irf.com
Page 9
IRFR24N15D/IRFU24N15D
WEE K 19
LINE A
YEAR 9 = 1999
DATE C ODE
PART NUMBER
IN TH E ASSEMBLY LINE "A"
A SSEMBLED ON WW 19, 1999
LOT CODE 5678
RECTIFIER
LOGO
INTERNAT IONAL
ASSEMBLY
LOT CODE
56 78
EXAMPL E:
WI TH ASSEMBLY
THIS IS AN IRFR120
IRFU120
919A
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
2X
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.2 45)
5.97 (.2 35)
9.65 (.380)
8.89 (.350)
0.89 (.035)
3X
0.64 (.025)
0.25 ( .01 0) M A M B
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CON F O R MS T O JED E C O UTLINE TO-2 5 2A A.
4 DIME N SIO N S S HOW N ARE B E F ORE SOLD E R DIP,
S O LD E R DIP MAX. +0.16 (.006).
1.14 (.04 5)
0.89 (.03 5)
0.58 (.023)
0.46 (.018)
I-Pak (TO-251AA) Part Marking Information
LEAD ASSIGNMEN TS
1 - G ATE
2 - D RAIN
3 - SOURCE
4 - D RAIN
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Page 10
IRFR24N15D/IRFU24N15D
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. CONTROLLING DIMENSION : M ILLIM ETER.
2. ALL DIMENSIONS ARE SHO WN IN MILLIM ETERS ( INCHES ).
3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
13 INCH
NOTES :
1. OUTLINE CONFO RMS TO EIA-481.
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
16 mm
16.3 ( .641 )
15.7 ( .619 )
FEED DIR ECTION
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
C
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 1.7mH
J
AS
≤ 14A, di/dt ≤ 380A/µs, V
= 14A.
DD
≤ V
(BR)DSS
,
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
TJ ≤ 175°C.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
DSS
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
10 www.irf.com
Page 11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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