Page 1
PD - 91318B
IRFR/U1205
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR1205)
l Straight Lead (IRFU1205)
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 55V
DSS
R
DS(on)
= 0.027Ω
ID = 44A
S
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
D - PAK
TO -252AA
I-P AK
TO-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31 A
I
DM
PD @TC = 25°C Power Dissipation 107 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 160
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 210 mJ
Avalanche Current 25 A
Repetitive Avalanche Energy 11 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
Junction-to-Ambient ––– 110
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IRFR/U1205
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.055 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.027 VGS = 10V, ID = 26A
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = VGS, ID = 250µA
Forward Transconductance 17 –– – – –– S VDS = 25V, ID = 25A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
VDS = 55V, VGS = 0V
µA
VGS = 20V
nA
Total Gate Charge ––– –– – 65 ID = 25A
Gate-to-Source Charge ––– ––– 12 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– –– – 27 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.3 ––– VDD = 28V
Rise Time ––– 69 –––
Turn-Off Delay Time ––– 47 – –– RG = 12Ω
ns
ID = 25A
Fall Time ––– 60 ––– RD = 1.1Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 410 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
44
160
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 22A, VGS = 0V
Reverse Recovery Time ––– 65 98 ns TJ = 25°C, IF =25A
Reverse RecoveryCharge ––– 1 60 240 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 470µH
DD
RG = 25Ω, I
I
≤ 25A, di/dt ≤ 320A/µs, V
SD
TJ ≤ 175°C
= 25A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
This is applied for I-PAK, Ls of D-PAK is measured between lead and
,
center of die contact
Uses IRFZ44N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com
D
S
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IRFR/U1205
)
A
)
A
A
)
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 1 00
V , Dra in- to -S o u rc e V o ltage (V
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , D ra in-to -S o u rc e Curre n t (A )
20µs PULSE W IDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o -S o u rc e V o ltage (V
DS
C
Fig 2. Typical Output Characteristics
2.5
I = 41 A
D
tion
2.0
T = 25°C
100
10
D
I , Drain-to-S ource Current (A)
1
45678910
V , Ga te-t o - So urc e Vo ltage ( V)
GS
Fig 3. Typical Transfer Characteristics
J
T = 175°C
J
V = 25V
DS
20µs PULSE W IDTH
1.5
1.0
(No rm alize d )
0.5
DS(on)
R , D r a in -t o -So u rce On Re s istan ce
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unction Tem pe rature (°C
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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IRFR/U1205
)
A
)
A
A
)
A
g
2500
2000
1500
1000
V = 0V, f = 1M H z
GS
C = C + C , C S H O RTE D
is s gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
C
500
0
rss
1 10 100
V , Drain -to -Sou rc e Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = 2 5A
V , Gate -to-Sou rc e Voltag e (V )
16
12
8
4
GS
D
V = 44 V
DS
V = 28 V
DS
FOR TEST CIRCUIT
0
0 10203040506070
Q , T ota l G a te C h arge (nC
G
SE E F IG U RE 1 3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A TION IN TH IS A REA LIMITE D
BY R
DS(on)
100
T = 175°C
J
T = 25 °C
10
SD
I , Reverse Drain Current (A)
1
0.5 1.0 1.5 2.0 2.5 3.0
J
V = 0V
V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
GS
100
10
D
I , Drain Current (A)
T = 25 °C
C
T = 17 5 °C
J
Sin
le Puls e
1
1 10 100
V , Dra in-t o-Sou rc e Voltage (V
DS
Fig 8. Maximum Safe Operating Area
10µs
100µs
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
IRFR/U1205
50
LIMITED BY PACKAGE
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U1205
A
A
)
15V
DRIVER
+
-
V
DD
R
V
G
10V
DS
L
D.U.T
I
AS
Ω
t
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
500
I
TO P 10 A
18A
400
300
200
100
AS
V = 25 V
E , S ing le Puls e Ava lan c he E n erg y (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
BOTT O M 25A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
6 www.irf.com
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IRFR/U1205
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRFR/U1205
A
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
- A -
5.46 (.215)
5.21 (.205)
4
6.22 (.245)
1.02 (.040)
1.64 (.025)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
1 2 3
5.97 (.235)
0.89 (.035)
3X
0.64 (.025)
0.25 ( .0 1 0 ) M A M B
4.57 (.180)
Part Marking Information
- B -
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 C O N F O RM S T O J E D E C O UT L IN E T O-2 5 2 A A.
4 DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOL D E R DIP M AX. + 0.16 ( .0 06) .
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN
TO-252AA (D-PARK)
E XAMP L E : T H IS IS A N IRF R 1 2 0
W IT H A SS E MBL Y
L OT C ODE 9 U1 P
INTERNATIONAL
R EC T IFIE R
L OGO
IRFR
120
FIR ST PO RTION
OF PART NUMBER
9U 1 P
ASSEM BLY
L O T C OD E
SECOND POR TION
OF PART NUMBER
8 www.irf.com
Page 9
Package Outline
R
TO-251AA Outline
Dimensions are shown in millimeters (inches)
IRFR/U1205
6.73 (.265)
6.35 (.250)
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
2X
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
9.65 (.380)
8.89 (.350)
0.89 (.035)
3X
0.64 (.025)
0 .2 5 (.0 1 0) M A M B
Part Marking Information
TO-251AA (I-PARK)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 C O N F O RM S T O J E D E C O UT L IN E T O-2 5 2 A A.
4 DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOL D E R D IP M A X. +0.16 ( .0 06) .
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN
E XAM P L E : T H IS IS A N IR F U 1 2 0
W IT H AS S E MB L Y
L O T CO DE 9 U 1 P
INTERNATIONAL
R E C T IF IER
LOG O
IR F U
120
FIRST PORTIO N
OF PART NUMBE
9 U 1 P
A S SE M BL Y
L O T C OD E
SECOND PORTION
OF PART NUMBER
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Page 10
IRFR/U1205
Tape & Reel Information
TO-252AA
TR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
12.1 ( .476 )
11.9 ( .469 )
NOT ES :
1. CONT ROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS AR E SH O WN IN M ILLIMETE RS ( INCHES ).
3. OU TL INE C O N F O R MS TO E IA-481 & EIA-541.
13 INCH
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
FEED DIRECTION
16 m m
NOTES :
1. OUTL INE C O N FOR MS T O E IA-48 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 5/98
10 www.irf.com
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