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PROVISIONAL
PD- 93932
IRFPS60N50C
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 60
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 38 A
I
DM
PD @TC = 25°C Power Dissipation 390 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 240
Linear Derating Factor 3.1 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
Recommended clip force 20 N
V
DSS
R
DS(on)
typ. I
500V 0.038Ω 60A
Super-247™
D
°C
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 600 mJ
Avalanche Current ––– 60 A
Repetitive Avalanche Energy ––– 39 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.32
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
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IRFPS60N50C
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 780 ––– VGS = 0V, VDS = 0V to 400V
oss
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.68 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.038 0.043 Ω VGS = 10V, ID = 36A
Gate Threshold Voltage 3. 5 – –– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -20V
Forward Transconductance 34 ––– ––– S VDS = 50V, ID = 36A
Total Gate Charge – – – 330 ––– ID = 36A
Gate-to-Source Charge ––– 77 ––– nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– 160 ––– VGS = 10V,
Turn-On Delay Time ––– 39 ––– VDD = 250V
Rise Time ––– 49 ––– ID = 36A
Turn-Off Delay Time ––– 94 ––– RG = 1.3Ω
ns
Fall Time ––– 11 ––– VGS = 10V,
Input Capacitance ––– 10760 – –– VGS = 0V
Output Capacitance ––– 6120 ––– VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 25760 –– – VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 240 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
60
240
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V
Reverse Recovery Time ––– 920 1380 ns TJ = 125°C, IF = 36A
Reverse RecoveryCharge ––– 20 30 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting T
I
AS
I
SD
= 25°C, L = 0.93mH, RG = 25Ω,
J
= 36A,
≤ 36A, di/dt ≤ 42A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
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Super-247™ Package Outline
PROVISIONAL
IRFPS60N50C
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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