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PD - 90380
PROVISIONAL
IRFPS59N60C
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg Reduces Drive
Required
l Improved Gate Resistance for Faster
Switching
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Lowest Conduction Loss in Package
Outline
l Effective C
specified (See AN 1001)
OSS
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A
I
DM
PD @TC = 25°C Power Dissipation 390 W
V
GS
dv/dt Peak Diode Recovery dv/dt TBD V/ns
T
J
T
STG
Pulsed Drain Current 240
Linear Derating Factor 3.1 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -40 to + 150
Storage Temperature Range -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
V
DSS
600V 0.045Ω 59A
HEXFET® Power MOSFET
R
DS(on)
Super-247™
max I
D
Applicable Off Line SMPS Topologies:
l Power Factor Correction Boost
l Full Bridge
www.irf.com 1
11/2/99
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IRFPS59N60C
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 370 ––– VGS = 0V, VDS = 0V to 480V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2 www.irf.com
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.43 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.045 Ω VGS = 10V, ID = 35A
Gate Threshold Voltage 4.0 ––– 6.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 100
––– ––– 500 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 35 ––– ––– S VDS = 50V, ID = 35A
Total Gate Charge ––– – –– 490 ID = 35A
Gate-to-Source Charge ––– ––– 100 nC VDS = 360V
Gate-to-Drain ("Miller") Charge ––– ––– 250 VGS = 10V
Turn-On Delay Time ––– 33 – –– VDD = 300V
Rise Time ––– 110 ––– ID = 35A
Turn-Off Delay Time ––– 86 ––– RG = 1.0Ω
ns
Fall Time ––– 18 ––– RD = 8.5Ω
Input Capacitance ––– 10490 ––– VGS = 0V
Output Capacitance ––– 5140 ––– VDS = 25V
Reverse Transfer Capacitance ––– 280 ––– pF ƒ = 1.0MHz,
Output Capacitance ––– 24050 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 220 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– TBD mJ
Avalanche Current ––– 35 A
Repetitive Avalanche Energy ––– 39 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.32
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 35A, VGS = 0V
Reverse Recovery Time ––– 770 1150 ns TJ = 25°C, IF = 35A
Reverse RecoveryCharge ––– 20 30 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
59
240
showing the
A
p-n junction diode.
G
D
S
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Super-247™ Package Outline
IRFPS59N60C
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 150°C
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
= 25°C, L = TBDmH
J
= 59A, dv/dt=TBD V/ns.
AS
≤ TBDA, di/dt ≤ TBDA/µs, V
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
≤ V
DD
(BR)DSS
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 11/99
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