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PD - 93911
IRFPS3815
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
= 150V
DSS
R
S
DS(on)
I
D
= 0.015Ω
= 105A
Description
The HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
Super-247™
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 105
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A
I
DM
PD @TC = 25°C Power Dissipation 441 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
T
J
T
STG
Pulsed Drain Current 390
Linear Derating Factor 2.9 W/°C
Gate-to-Source Voltage ± 30 V
Single Pulse Avalanche Energy 1610 mJ
Avalanche Current 58 A
Repetitive Avalanche Energy 38 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.34
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
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IRFPS3815
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1270 ––– VGS = 0V, VDS = 0V to 120V
oss
Drain-to-Source Breakdown Voltage 150 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.015 Ω VGS = 10V, ID = 63A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = 10V, ID = 250µA
Forward Transconductance 47 ––– ––– SVDS = 50V, ID = 58A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
µA
nA
= 100V, VGS = 0V
V
DS
VGS = -30V
Total Gate Charge ––– 260 390 ID = 58A
Gate-to-Source Charge ––– 53 80 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– 150 230 VGS = 10V
Turn-On Delay Time ––– 22 ––– VDD = 75V
Rise Time ––– 130 ––– ID = 58A
Turn-Off Delay Time ––– 51 ––– RG = 1.03Ω
ns
Fall Time ––– 60 ––– VGS = 10V
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 6810 ––– VGS = 0V
Output Capacitance ––– 1570 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 9820 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 670 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
105
390
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V
Reverse Recovery Time ––– 270 410 ns TJ = 25°C, IF = 58A
Reverse RecoveryCharge ––– 2990 4490 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 0.96mH
J
= 58A. (See Figure 12)
AS
≤ 58A, di/dt ≤ 450A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
,
oss
while V
is rising from 0 to 80% V
DS
DSS
TJ ≤ 175°C
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D
S
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IRFPS3815
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
5.0V
50µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
5.0V
10
D
I , Drain-to-Source Current (A)
50µs PULSE WIDTH
°
T = 175 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
97A
2.5
°
T = 175 C
J
100
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
5 6 7 8 9 10 11 12
V , Gate-to-Source Voltage (V)
GS
50µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFPS3815
)
12000
10000
Ciss
8000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Coss
6000
4000
C, Capacitance(pF)
2000
0
Crss
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
SHORTED
ds
20
I =
58A
D
V = 120V
DS
V = 75V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
DS
V = 30V
DS
FOR TEST CIRCUIT
0
0 100 200 300 400
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
13
100
°
T = 175 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.0 0.4 0.8 1.2 1.6 2.0
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
1000
10us
100
D
I , Drain Current (A)I , Drain Current (A)
10
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFPS3815
(
)
120
100
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
V
DS
90%
10%
V
GS
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
d(on)tr
R
D.U.T.
t
d(off)tf
D
+
V
DD
-
D = 0.50
thJC
0.1
0.20
0.10
0.05
P
0.02
0.01
0.01
SINGLE PULSE
THERMAL RESPONSE
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFPS3815
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(B R)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
DD
4000
TOP
3000
2000
1000
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
°
D
24A
41A
58A
Current Regulator
Same Type as D.U.T.
Q
10 V
G
12V
Q
GS
V
G
Q
GD
V
GS
Charge
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
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IRFPS3815
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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IRFPS3815
Super-247™ Package Outline
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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