Datasheet irfps29n60l Datasheet

PD - 94622

s

f

SMPS MOSFET

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

IRFPS29N60L

HEXFET® Power MOSFET

V

DSSRDS(on)

600V

175m

typ.

Trr typ.

Ω 130ns 29A

I

D

• Motor Control applications

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity

.

Super-247™

Absolute Maximum Ratings

Parameter Max. Units

I

@ TC = 25°C Continuous Drain Current, V

D

@ TC = 100°C Continuous Drain Current, VGS @ 10V

I

D

I

DM

@TC = 25°C

P

D

V

GS

dv/dt Peak Diode Recovery dv/dt T

J

T

STG

Pulsed Drain Current Power Dissipation 480 W

Linear Derating Factor 3.8 W/°C Gate-to-Source Voltage ±30 V

Operating Junction and -55 to + 150 Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in)

c

GS

d

@ 10V

29 18 A

110

12 V/ns

Diode Characteristics

Symbol Parameter Min. Typ. Max. Unit

I

S

I

SM

V t

rr

Q

I

RRM

t

on

SD

rr

Continuous Source Current ––– ––– 29 MOSFET symbol (Body Diode) A showing the

Pulsed Source Current ––– ––– 110 integral reverse (Body Diode) Diode Forward Voltage ––– ––– 1.5 V Reverse Recovery Time ––– 130 190 ns

Reverse Recovery Charge ––– 630 950 nC

Reverse Recovery Current ––– 9.4 14 A Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



c

––– 240 360

––– 1820 2720

Conditions

p-n junction diode.

= 25°C, IS = 29A, VGS = 0V

T

J

= 25°C, IF = 29A

T

J

T

= 125°C, di/dt = 100A/µs

J

= 25°C, IS = 29A, VGS = 0V

T

J

T

= 125°C, di/dt = 100A/µs

J

= 25°C

T

J

f

www.irf.com 1

2/6/03

IRFPS29N60L

/

Single Pul

gy

d

Aval

c

R

c

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

∆

V

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G

(BR)DSS

Drain-to-S ou r c e Br eakdow n V ol t a ge 600 ––– ––– V

∆

T

Breakdown Voltag e Temp. Coef fi cient ––– 0.53 ––– V/°C

J

Stat ic D r ai n- to-Source On- R e sist an ce ––– 175 210 Gate Threshold Voltage 3.0 ––– 5.0 V Drain-to-S ou r c e Le akage Cur r en t ––– – –– 50 µA

––– ––– 2.0 mA Gate-to-Sou r c e Forward Lea k age ––– ––– 100 nA Gate-to-Source Rev erse Le akage ––– – –– -100 Internal Gate Resistance ––– 0.86 –––

VGS = 0V, ID = 250µA Referen c e to 25° C, I V

mΩ

GS

V

DS

V

DS

V

DS

VGS = 30V V

GS

Ω

f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forwa r d Transconductance 15 ––– ––– S Q Q Q t t t t C C C C C

g gs

gd d(on) r d(off) f

iss

oss

rss

oss

eff. eff. (ER)

Total Gate Charge ––– ––– 220 Gate-to-Source Charge ––– ––– 67 nC Gate-to-Drain ("Miller") Charge ––– ––– 96 Turn-On Delay Time ––– 34 ––– Rise Time ––– 100 ––– ns Turn-Off Delay Time ––– 66 ––– Fall Time ––– 54 ––– Input Capacitance ––– 6160 ––– Output Capacitance ––– 530 ––– Reverse Trans fer Capac itanc e – –– 44 ––– pF Effe c tive Output C ap ac itanc e ––– 250 ––– Effective Output Capacitance ––– 190 –––

(Energy Related)

VDS = 50V, ID = 17A

= 29A

I

D

V

DS

V

GS

VDD = 300V

= 29A

I

D

R

G

V

GS

VGS = 0V V

DS

ƒ = 1.0MHz , See Fig. 5 V

GS

Avalanche Characteristics

Symbol

E

AS

I

AR

E

AR

anche Current

epetitive Avalanche Energy

Parameter Typ. Units

se Avalanche Ener



––– mJ ––– A ––– mJ

Thermal Resistance

Symbol Parameter Typ. Units

R

JC

θ

R

CS

θ

R

JA

θ

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See Fig. 11)

 Starting T

I

= 29A. (See Figure 12a)

AS

 I

≤ 29A, di/dt ≤ 560A/µs, V

SD

TJ ≤ 150°C.

Junction-to-Case ––– Case-to-Sink, Flat, Greased Sur face 0.24 °C/W Junction-to-Ambient –––

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

= 25°C, L = 1.5mH, RG = 25Ω,

J

≤ V

DD

(BR)DSS

,

while VDS is rising from 0 to 80% V

oss

C

eff.(ER) is a fixed capacitance that stores the same energy

oss

as C

while VDS is rising from 0 to 80% V

oss

2 www.irf.com

Conditions

= 1mA

D

= 10V, ID = 17A

f

= VGS, ID = 250µA = 600V, VGS = 0V = 480V, VGS = 0V, TJ = 125°C

= -30V

Conditions

= 480V = 10V, See Fig . 7 & 15

f

= 4.3Ω

= 10V, See Fig . 11a & 11b

= 25V

= 0V,VDS = 0V to 480V

g

Max.

570

29 48

Max.

0.26 –––

40

.

DSS

.

DSS

f

IRFPS29N60L

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

D

1000

100

10

1

0.1

TOP 15V

BOTTOM 4.5V

VGS 10V

9.0V

7.0V

5.5V

5.0V

20µs PULSE WIDTH Tj = 25°C

4.5V

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000.00

)

Α

100.00

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

D

10.00

1.00

0.10

TJ = 150°C

TJ = 25°C

V

= 50V

DS

20µs PULSE WIDTH

0.01 4 6 8 10

VGS, Gate-to-Source Voltage (V)

100

TOP 15V

) A

(

t

n

e

r

10

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

BOTTOM 4.5V

1

VGS 10V

9.0V

7.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 150°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 28A V

= 10V

GS

2.5

2.0

)

d

e

z

i

1.5

l

a m

r

o N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRFPS29N60L

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

C

iss

C

oss

C

rss

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

20

ID= 28A

) V

(

16

e

g

a

t

l

o V

12

e

c

r

u

o S

-

o

8

t

-

e

t

a G

,

S

4

G

V

0

0 40 80 120 160 200 240

VDS= 480V VDS= 300V

VDS= 150V

Q

Total G ate Charge (nC)

G

40

35

30

25

)

J

µ

( y

20

g

r

e

n E

15

10

1000.00

) A

(

t

100.00

n

e

r

u C n

i

a

r

10.00

D e

s

r

e

v

e R

,

1.00

D S

I

0.10

5

0

0 100 200 300 400 500 600 700

V

Drain-to-Source Voltage (V)

DS,

Fig 6. Typ. Output Capacitance

Stored Energy vs. V

TJ = 150°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drai n Voltage (V)

DS

V

GS

= 0V

Fig 7. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 8. Typical Source-Drain Diode

Forward Voltage

4 www.irf.com

IRFPS29N60L

+

-

1000

OPERATION IN THIS AREA

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D ,

I

100

10

1

D

Tc = 25°C Tj = 150°C Single Pulse

LIMITED BY RDS(on)

100µsec

1msec

10msec

0.1 1 10 100 1000 10000

VDS, Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

30

25

) A

(

20

t

n

e

r

u C

15

n

i

a

r D

10

,

D

I

5

0

25 50 75 100 125 150

TC , Case Temper ature (°C)

Fig 10. Maximum Drain Current vs.

Case Temperature

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 11a. Switching Time Test Circuit

V

DD

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 11b. Switching Time Waveforms

www.irf.com 5

IRFPS29N60L

1

)

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

D = 0.50

0.1

0.01

0.001

0.20

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5.0

) V

( e

g

4.0

a

t

l

o V

d

l

o

h

s

3.0

e

r

h

t e

t

a G

)

h

2.0

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = 250µA

Fig 13. Threshold Voltage vs. Temperature

6 www.irf.com

IRFPS29N60L

A

1200

)

J m

( y

1000

g

r

e

n E

e

800

h

c

n

a

l

a

600

v A

e

s

l

u

400

P e

l

g

n

i S

200

,

S A

E

0

25 50 75 100 125 150

TOP 13A

BOTTOM29A

Starting TJ , Junction Temperature (°C)

Fig 14a. Maximum Avalanche Energy

vs. Drain Current

15V

V

DS

L

DRIVER

I

D

18A

V

(BR)DSS

t

p

R

G

20V

Fig 14b. Unclamped Inductive Test Circuit

12V

V

GS

Fig 15a. Gate Charge Test Circuit

D.U.T

I

AS

0.01

t

p

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

3mA

Current Sampling Resistors

+

V

DD

-

Ω

I

AS

Fig 14c. Unclamped Inductive Waveforms

Q

G

VGS V

+

V

D.U.T.

I

G

DS

-

I

D

Q

GS

V

G

Q

GD

Charge

Fig 15b. Basic Gate Charge Waveform

www.irf.com 7

IRFPS29N60L

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

+



-



-

+



R

G

Driver Gate Drive

P.W.

• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test

Period

D =

G

P.W.

Period

VGS=10V

V

DD

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 16. For N-Channel HEXFET® Power MOSFETs

8 www.irf.com

Super-247™ (TO-274AA) Package Outline

0.13 [.005]

2.15 [.084]

1.45 [.058]

4

2X R

3.00 [.118]

2.00 [.079]

20.80 [.818]

19.80 [.780]

16.10 [.632]

15.10 [.595]

5.50 [.216]

A

4.50 [.178]

IRFPS29N60L

16.10 [.633]

15.50 [.611]

0.25 [.010]

13.90 [.547]

13.30 [.524]

4

BA

1.30 [.051]

0.70 [.028]

C

14.80 [.582]

13.80 [.544]

5.45 [.215] 2X

12

3

4.25 [.167]

3.85 [.152]

1.60 [.062]

3X

1.45 [.058]

0.25 [.010]

BA

B

Ø 1.60 [.063]

1.30 [.051]

3X

1.10 [.044]

NOTES :

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.

2. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES]

3. CONTR OLLING DIMENSION: MILLIMET ER

4. OUT LINE CONFORMS TO JEDE C OUTLINE TO-274AA

2.35 [.092]

1.65 [.065]

SECTI ON E-E

MAX.

Super-247™ (TO-274AA)Part Marking Information

EXAMPLE: THIS IS AN IRFPS37N50A WITH

ASSEMBL Y LO T COD E A8B9

INTERNATIONAL RECTIFIER LOGO

IRFPS37N50A

A8B9

0020

ASSEMBLY LOT CODE

TOP

Super TO-247™ package is not recommended for Surface Mount Application.

PART NUMBER

DATE CODE (YYWW)

YY = YEAR WW = WEEK

EE

LEAD AS S I GNMENT S

MOSF E T IGB T

1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.2/03

www.irf.com 9