Page 1
Power MOSFET
TO-247AC
G
D
S
IRFPG30, SiHFPG30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 1000
(Ω)V
R
DS(on)
Q
(Max.) (nC) 80
g
(nC) 10
Q
gs
Q
(nC) 42
gd
Configuration Single
= 10 V 5.0
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
S
N-Channel MOSFET
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFPG30PbF
SiHFPG30-E3
IRFPG30
SiHFPG30
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 2.0
C
DS
± 20
GS
I
D
IDM 12
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 1.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 35 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12).
DD
c. I
≤ 3.1 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91252 www.vishay.com
S11-0441-Rev. B, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
1000
3.1
180 mJ
3.1 A
13 mJ
125 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
Page 2
IRFPG30, SiHFPG30
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 1.4 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
- 140 -
oss
-50-
rss
g
--10
gs
--42
gd
d(on)
r
-89-
d(off)
-29-
f
D
V
V
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-1.0
VGS = 0 V, ID = 250 μA 1000 - -
VDS = VGS, ID = 250 μA 2.0 -
= ± 20 V - -
GS
VDS = 1000 V, VGS = 0 V - -
= 800 V, VGS = 0 V, TJ = 125 °C - -
DS
= 10 V ID = 1.9 A
GS
VDS = 50 V, ID = 1.9 A
VGS = 0 V,
= 25 V,
V
DS
b
b
--
2.4 - -
- 980 -
4.0 V
± 100 nA
100
500
5.0 Ω
f = 1.0 MHz, see fig. 5
--80
= 3.1 A, VDS = 400 V
I
= 10 V
GS
D
see fig. 6 and 13
b
-12-
V
= 500 V, ID = 3.1 A,
DD
= 12 Ω, RD = 170 Ω, see fig. 10
g
b
-24-
-5.0-
-13-
--3.1
--12
TJ = 25 °C, IS = 3.1 A, VGS = 0 V
b
--
-
b
-
1.8 V
410 620 ns
1.3 2.0 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
μA
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91252
2 S11-0441-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFPG30, SiHFPG30
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91252 www.vishay.com
S11-0441-Rev. B, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 4
IRFPG30, SiHFPG30
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91252
4 S11-0441-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 5
IRFPG30, SiHFPG30
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Vishay Siliconix
R
D.U.T.
D
+
-
V
DS
V
GS
R
G
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DD
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 10b - Switching Time Waveforms
Document Number: 91252 www.vishay.com
S11-0441-Rev. B, 14-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 6
IRFPG30, SiHFPG30
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
A
10 V
Var y tp to obtain
required I
AS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
V
DS
t
p
V
DS
I
AS
V
DD
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
10 V
V
Q
GS
G
G
Q
GD
Charge
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91252
6 S11-0441-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 7
Peak Diode Recovery dV/dt Test Circuit
IRFPG30, SiHFPG30
Vishay Siliconix
D.U.T.
+
-
R
g
Driver gate drive
P.W.
+
-
Period
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
• dV/dt controlled by R
• Driver same type as D.U.T.
•
I
controlled by duty factor “D”
SD
• D.U.T. - device under test
-
D =
g
P.W.
Period
+
+
V
DD
-
V
= 10 Va
GS
D.U.T. l
Reverse
recovery
current
D.U.T. V
Re-applied
voltage
Inductor current
Note
a. V
waveform
SD
Body diode forward
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
current
dI/dt
Diode recovery
dV/dt
V
DD
I
SD
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91252
.
Document Number: 91252 www.vishay.com
S11-0441-Rev. B, 14-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 8
TO-247AC (HIGH VOLTAGE)
4
E
E/2
R/2
3
Q
B
Package Information
Vishay Siliconix
A
S
A2
A
Ø k BD
D2
A
7
ØP
MM
(Datum B)
ØP1
2 x R
(2)
5
L1
2 x b2
3 x b
MM
0.10 AC
D
1
C
3
2
L
See view B
2 x e
b4
D
A
C
A1
DDE E
View B
Thermal pad
Planting
C
C
(c)
4
5
E1
MM
0.01 BD
View A - A
(b1, b3, b5)
(b, b2, b4)
Section C - C, D - D, E - E
(4)
5
D1
Base metal
c1
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.300 BSC
b5 2.59 3.38 0.102 0.133 Ø P 3.56 3.66 0.140 0.144
c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC
ECN: S-81920-Rev. A, 15-Sep-08
DWG: 5971
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
Document Number: 91360 www.vishay.com
Revision: 15-Sep-08 1
Page 9
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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