Datasheet IRFP9150 Datasheet (Intersil)

IRFP9150

Data Sheet August 1999

25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET

This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switchingconvertors,motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.

The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.

Formerly developmental type TA49230.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP9150 TO-247 IRFP9150

NOTE: When ordering, use the entire part number.

File Number

Features

• 25A, 100V

DS(ON)

= 0.150Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

2293.4

Packaging

DRAIN

(FLANGE)

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

4-63

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFP9150

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP9150 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 10kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

-100 V

-100 V

-25

-18

-100 A
±20 V
150 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

as

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

1300 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2)

I

D(ON) VDS > I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = -250µA (Figure 10) 1 - - V

= VGS, ID = -250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TC= 125oC - - 250 µA

DSS

x r

DS(ON)MAX,VGS

= 10V -25 - - A

VGS = ±20V - - ±100 nA

= -10V, ID = -10A (Figure 8, 9) - 0.090 0.150 Ω
VDS≤ -10V, ID = -12.5A (Figure 12) 4 10 - S

= -50V, ID≈ -25A, RG = 6.8Ω, RL = 2Ω
(Figures 17 and 18) MOSFET switching times are es­sentially independent of operating temperature).

- 16 24 ns

- 110 160 ns

- 65 100 ns

-4670ns

= -10V, ID = -25A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

DSS

(Gate Charge is Essentially Independent Of Operat­ing Temperature)

- 82 120 nC

-14-nC

-42-nC

VGS = 0V, VDS = -25V, f = 1.0MHz
(Figure 11)

- 2400 - pF

- 850 - pF

- 400 - pF

Measured From the Drain
Lead, 6mm (0.25in) From
the Package to the Center
of the Die

MeasuredFromthe Source
Pin, 6mm (0.25in) From
Header to the Source
Bonding Pad

Modified MOSFET
Symbol Showing the In­ternal Device Induc­tances

D

L

D

G

L

S

S

- 5.0 - nH

-13-nH

- - 0.83oC/W

Free Air Operation - - 30

0

C/W

4-64

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

IRFP9150

Modified MOSFET Symbol
Showing the Integral Re­verse P-N Junction Diode

D

- - -25 A

- - -100 A

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TJ = 25oC, ISD = -25A, VGS = 0V (Figure 13) - -0.9 -1.5 V

SD

TJ = 25oC, ISD = -25A, dISD/dt = 100A/µs - 150 300 ns

rr

TJ = 25oC, ISD = -25A, dISD/dt = 100A/µs 0.3 0.7 1.5 µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3

4. VDD= 25V, start TJ= 25oC, L = 3.2mH, RG= 25Ω, peak IAS= 25A (Figures 15, 16).

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

-30

-25

-20

-15

-10

, DRAIN CURRENT (A)

D

I

-5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE(oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

10

DUTY CYCLE IN DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

1

0.01

0.10

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

NORMALIZED EFFECTIVE TRANSIENT

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-65

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

, SQUARE WAVE PULSE DURATION (s)

t

1

-2

10

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

TJ= PDMx Z

-1

10

t

1

t

2

1/t2

x R

θJC

+ T

C

10

θJC

1

IRFP9150

Typical Performance Curves

200

IRFP9150,1

100

IRFP9150,1

10

, DRAIN CURRENT (A)

D

I

TC = 25oC
T

1

1 10 100

OPERATION IN THIS

AREA IS LIMITED

= MAX RATED

J

BY r

DS(ON)

VDS, DRAIN VOLTAGE (V)

Unless Otherwise Specified (Continued)

10ms

100ms

0.1s

IRFP9150
IRFP9151

1s

DC

-100
VGS = 14V

-80

-60

-40

, DRAIN CURRENT (A)

D

I

-20

0

-10 -20 -30 -40 -50
(V

DS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

T

= 25oC

C

VGS = 4V

), DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

PULSE DURATION = 80µs

-50

DUTY CYCLE = 0.5% MAX
T

= 25oC

C

-40

-30

VGS = 10V

VGS = 8V

VGS = 7V

-100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

≤ -50V

V

DS

-10

VGS = 12V

VGS = 10V

VGS = 9V

VGS = 8V

VGS = 7V
VGS = 6V

VGS = 5V

-20

, DRAIN CURRENT (A)

D

I

-10

0

0-1-2-3-4-5

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = 6V

VGS = 5V

VGS = 4V

-1

DRAIN TO SOURCE CURRENT (A)

D(ON),

I

-0.1
0 -2-4-6-8

V

, GATE TO SOURCE VOLTAGE (V)

GS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

350

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

300

250

200

150

DRAIN TO SOURCE

100

ON RESISTANCE (mΩ)

DS(ON),

r

50

0 -20 -40 -60 -80 -100

VGS = 10V

, DRAIN CURRENT (A)

I

D

VGS = 20V

2.2

1.8

1.4

1.0

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 10V, ID = -10A

V

GS

-40 0 40 80 120
T

, JUNCTION TEMPERATURE (oC)

J

-10

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-66

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRFP9150

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 0 40 80 120 160
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

12

9

6

TRANSCONDUCTANCE (S)

3

fs,

g

25oC

150

o

C

4500
4000
3500
3000
2500
2000
1500

C, CAPACITANCE (pF)

1000

500

0

C

RSS

-10 -20 -30 -40
, DRAIN TO SOURCE VOLTAGE (V)

V

DS

C

C

OSS

ISS

VGS= 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

≈ C

OSS

GD

DS

+ C

GD

GD

-50

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

10

o

C

150

1

, DRAIN CURRENT (A)

SD

I

25oC

0.1

0 -10 -20 -30 -40 -50

, DRAIN CURRENT (A)

I

D

0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
V

, SOURCE TO DRAIN VOLTAGE (V)

SD

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

0

-5

-10

-15

, GATE TO SOURCE VOLTAGE (V)

GS

V

-20
0 20 80 140 160 180

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

V

DS

ID= -25A

V

DS

= -20V

1201006040

V

DS

= -80V

= -50V

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-67

IRFP9150

Test Circuits and Waveforms

V

DS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

L

R

G

-

V

DD

+

DUT

I

AS

0.01Ω

0

V

DD

I

AS

t

P

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

BV

t

AV

DSS

V

DS

t

ON

t

d(ON)

t

R

L

DUT

R

V

GS

G

-

V

DD

+

0

V

DS

V

GS

0

r

10%

90%

10%

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

-V

DS

D

(ISOLATED
SUPPLY)

DUT

0

V

DS

Q

gs

Q

gd

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

V

GS

t

OFF

50%

90%

90%

t

f

10%

Q

g(TOT)

S

CURRENT

I

D

SAMPLING

DUT

+V

DS

V

DD

0

I

g(REF)

G

0

I

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

4-68

IRFP9150

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly ,the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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