Datasheet IRFP7430PBF Specification

Applications

R

DS(on)

typ.

1.0m

Ω

StrongIRFET

IRFP7430PbF

TM

l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits

l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters

l DC/AC Inverters

D

G

S

HEXFET® Power MOSFET

V

DSS

max. 1.3mΩ I

D

(Silicon Limited)

I

D

(Package Limited)

D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free*

TO-247AC

IRFP7430PbF

GDS

Gate Drain Source

S

D

G

Ordering Information

Base Part Number Package Type Standard Pack Complete Part

Form Qua ntity

IRFP7430PbF TO-247 Tube 50 IRFP7430PbF

Number

40V

404A

195A

c

)

6.0

Ω

m (

e c n a

t s

i s e

4.0

R n O e

c

r u o S

o

t

2.0

n

i a

r D ,

) n o

( S D

0.0

R

4 6 8 10 12 14 16 18 20

V

Gate -to -Source Voltage (V)

GS,

TJ = 25°C

ID = 100A

TJ = 125°C

Fig 1. Typical On-Resistance vs. Gate Voltage

1

500

400

) A

( t n

300

e

r

r u

C n

i a

r

200

D ,

D

I

100

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Limited By Package

Fig 2. Maximum Drain Current vs. Case Temperature

IRFP7430PbF

(BR)DSS

GS( th)

DSS

G

DS

D

DS

D

GS

J

STG

AS (tes ted)

AR

θ

JA

Absolute Maximum Ratings

Symbol Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

I

D

I

DM

Pulsed Drain Current

d

PD @TC = 25°C Maximum Power Dissipation W

Linear Derating Factor

V

T

Gate-to-Source Voltage V

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS ( Thermally limited)

E

I

E

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value Avalanche Current

d

Repetitive Avalanche Energy

e

k

See Fig. 14, 15, 22a, 22b

d

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

JC

R

CS

R

Junction-to-Case

Case-to-Sink, Flat Greased Surface 0.24 –––

Junction-to-Ambient ––– 40

j

––– 0.41

Max.

404

286

195

1524

366

2.4

± 20

-55 to + 175

300

x

in (1.1Nxm)

10lbf

722

1360

c c

W/°C

°C

mJ

°C/W

A

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V ΔV R

DS(on)

V I

I

GSS

R

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 50Ω, I

 I

≤ 100A, di/dt ≤ 990A/μs, V

SD

Drain-to-Source Breakdown Voltage 40 ––– ––– V

/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C

Static Drain-to-Source On-Resistance ––– 1.0 1.3 mΩ

1.2 ––– mΩ Gate Threshold Voltage 2.2 ––– 3.9 V Drain-to-Source Leakage Current ––– ––– 1.0 μA

––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Internal Gate R esistance ––– 2.1 ––– Ω

 Pulse width ≤ 400μs; duty cycle ≤ 2%.  C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

 C

C

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

, starting TJ = 25°C, L = 0.14mH

Jmax

= 100A, VGS =10V.

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

mended footprint and soldering techniques refer to application note #AN-994.

 R

is measured at TJ approximately 90°C.

θ

 This value determined from sample failure population,

starting TJ = 25°C, L= 0.14mH, RG = 50Ω, I

* Halogen -Free since April 30, 2014

Conditions

VGS = 0V, ID = 250μA Reference to 25°C, I

= 10V, ID = 100A

V

GS

= 6.0V, ID = 50A

V

GS

= VGS, ID = 250μA

V

= 40V, VGS = 0V

V V

= 40V, VGS = 0V, TJ = 125°C

V

= 20V

GS

= -20V

V

GS

.

DSS

.

DSS

= 100A, VGS =10V.

AS

= 1.0mA

g

d

2

Dynamic @ TJ = 25°C (unless otherwise specified)

g

sync

d(on)

r

oss

rss

S

SM

rr

J

RRM

DS

D

J

D

DD

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 150 ––– ––– S Q Q

gs

Q

gd

Q t t t

d(off)

t

f

C

iss

C C C

eff. (ER ) Effective Output Capacitan ce (Energy Related)

oss

eff. (TR) Effective Output Capacitance (Time Rel ated)

C

oss

Total Gate Charge ––– 300 460 nC Gate-to-Source Charge ––– 77 ––– Gate-to-Drain ("Miller") Charge ––– 98 ––– Total Gate Charge Sync. (Qg - Qgd) ––– 202 ––– Turn-On Delay Time ––– 32 ––– ns Rise Time ––– 105 ––– Turn-Off Delay Time ––– 160 ––– Fall Time ––– 100 ––– Input Capacitance ––– 14240 ––– pF Output Capacitance ––– 2130 ––– Reverse Transfer Capacitance ––– 1460 –––

i

––– 2605 –––

h

––– 2920 –––

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

Continuous Source Current ––– ––– 376

(Body Diode)

I

V

SD

Pulsed Source Current ––– ––– 1576 A

(Body Diode)

d

Diode Forward Voltage ––– 0.86 1.2 V dv/dt Peak Diode Recovery t

Q

rr

I

Reverse Recovery Time ––– 52 ––– ns TJ = 25°C VR = 34V,

Reverse Recovery Charge ––– 97 ––– nC TJ = 25°C

Reverse Recovery Current ––– 2.3 ––– A TJ = 25°C

f

––– 2.7 ––– V/ns

––– 52 ––– T

––– 97 ––– T

c

IRFP7430PbF

Conditions

VDS = 10V, ID = 100A

= 100A

I

=20V

V

DS

g

= 10V

V

GS

I

= 100A, VDS =0V, VGS = 10V

= 20V

V I

= 30A

R

= 2.7Ω

G

VGS = 10V V

GS

V ƒ = 1.0 MHz V

GS

V

GS

MOSFET symbol

A

showing the integral reverse

p-n junction diode. T

= 25°C, IS = 100A, VGS = 0V

J

T

= 175°C, IS = 100A, VDS = 40V

= 125°C IF = 100A

= 125°C

J

g

= 0V = 25V

= 0V, VDS = 0V to 32V = 0V, VDS = 0V to 32V

Conditions

i h

G

g

di/dt = 100A/μs

D

S

g

3

IRFP7430PbF

1000

TOP 15V

) A

( t n e

r

100

r u

C e

c

r u o S

o

t

-

10

n

i a

r D

,

D

I

4.5V

≤

BOTTOM 4.5V

60μs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

1000

) A

( t

n e

r

100

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

10

TJ = 175°C

TJ = 25°C

V

DS

= 25V

≤60μs PULSE WIDTH

1.0 2 3 4 5 6 7

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

VGS

10V

8.0V

7.0V

6.0V

5.5V

4.8V

1000

TOP 15V

) A

( t n e

r

r u

C e

c

r

100

u o S

o

t

n

i a

r D

,

D

I

4.5V

≤

BOTTOM 4.5V

60μs PULSE WIDTH

VGS

10V

8.0V

7.0V

6.0V

5.5V

4.8V

Tj = 175°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

1.8

1.6

1.4

1.2

1.0

0.8

ID = 100A

V

= 10V

GS

0.6

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

100000

) F p

( e

c n a

t

i c a p a

C ,

C

4

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

iss

10000

C

oss

C

rss

1000

1 10 100

VDS, Drain-to-Source Voltage (V)

SHORTED

14.0 ID= 100A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 32V

VDS= 20V

0.0 0 50 100 150 200 250 300 350 400

QG, Total Gate Charge (nC)

Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage

IRFP7430PbF

1000

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

100

10

TJ = 25°C

1

V

GS

0.1

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

= 0V

Fig 9. Typical Source-Drain Diode

) V

(

47

e g a

t

l o

46

V n w

o

45

d k a e

r B

44

e c

r u o

43

S

o

t

n

i

42

a

r D

,

S

41

S D

) R

40

B

(

V

-60 -40 -20 0 20 40 60 80 100120140160180

Forward Voltage

Id = 1.0mA

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

)

6.0

Ω

m (

e c n a

t s

i s e

R

4.0

n O e

c

r u o S

o

t

-

2.0

n

i a

r D ,

) n o

(

S D

0.0

R

0 200 400 600 800 1000 1200

VGS = 5.5V

VGS = 6.0V

V

= 7.0V

GS

VGS = 8.0V

VGS =10V

ID, Drain Current (A)

10000

) A

1000

( t n e

r

r u

C

100

e c

r u o S

o

t

n

i a

r D ,

D

I

Limited by package

10

1

Tc = 25°C Tj = 175°C Single Pulse

0.1

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

1msec

VDS, Drain-toSource Voltage (V)

100μsec

10msec

DC

Fig 10. Maximum Safe Operating Area

2.5

VDS= 0V to 32V

2.0

)

1.5

J

μ

( y

g

r e n

1.0

E

0.5

0.0 0 5 10 15 20 25 30 35 40 45

V

Drain-to-Source Voltage (V)

DS,

Fig 12. Typical C

Stored Energy

OSS

Fig 13. Typical On-Resistance vs. Drain Current

5

IRFP7430PbF

1

W

/ C

° )

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.1

0.01

0.001

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and

) A

( t n e

r

r u

C e

h c n a

l a v A

100

10

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25°C and

Tstart = 150°C.

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

800

TOP Single Pulse

700

) J

m

600

( y

g

r e

500

n E

e h

400

c n a

l a

300

v A ,

R

200

A

E

BOTTOM 1.0% Duty Cycle ID = 100A

100

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy vs. Temperature

6

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

. This is validated for every part type.

jmax

is not exceeded.

jmax

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

= Average power dissipation per single avalanche pulse.

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

IRFP7430PbF

4.0

) V

(

3.5

e g a

t

l o

3.0

V d

l o h s e

2.5

r h

t e

t a

G ,

) h

t

( S G

V

ID = 250μA

ID = 1.0mA

2.0

ID = 1.0A

1.5

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 17. Threshold Voltage vs. Temperature

12

IF = 100A

VR = 34V

10

TJ = 25°C

TJ = 125°C

8

) A

(

6

M R R

I

4

12

IF = 60A

VR = 34V

10

TJ = 25°C

TJ = 125°C

8

) A

(

6

M R R

I

4

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 18 - Typical Recovery Current vs. dif/dt

300

IF = 60A

VR = 34V

250

TJ = 25°C

TJ = 125°C

)

200

C n

(

R R

Q

150

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

260

220

)

180

C n

(

R R

Q

140

100

60

0 200 400 600 800 1000

100

50

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dtFig. 19 - Typical Recovery Current vs. dif/dt

IF = 100A

VR = 34V

TJ = 25°C

TJ = 125°C

diF /dt (A/μs)

Fig. 21 - Typical Stored Charge vs. dif/dt

7

IRFP7430PbF

A





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test



G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

20V

V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

V

DS

D

V

DS

90%

D.U.T.

+

V

DD

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2μF

12V

V

GS

50KΩ

3mA

.3μF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

G

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

8

I

D

Qgs1

Qgs2 Qgd Qgodr

Fig 24b. Gate Charge Waveform

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

IRFP7430PbF

TO-247AC Part Marking Information

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at

9

http://www.irf.com/package/

IRFP7430PbF

N/A

•

Qualification information

†

Industrial

Qualification level

(per JEDEC JESD47F

††

guidelines)

Moisture Sensitivity Level TO-247AC

(per JE DE C J-S T D-020D††)

RoHS compliant

Yes

 Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

 Applicable version of JEDEC standard at the time of product release.

Revision History

Date Comment

•

Updated data sheet with new IR corporate template.

4/22/2014

Updated package outline and part marking on page 9.

•

Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

10

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