Datasheet IRFP460, IRFP462 Specification

SEMICONDUCTOR

January 1998

IRFP460,

IRFP462

20A and 17A, 500V, 0.27 and 0.35 Ohm,

N-Channel Power MOSFETs

Features

• 20A and 17A, 500V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.27Ω and 0.35Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP460 TO-247 IRFP460
IRFP462 TO-247 IRFP462

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17465.

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN
(TAB)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

5-1

File Number 2291.2

IRFP460, IRFP462

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP460 IRFP462 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

500 500 V
500 500 V

20
12

17
11

80 68 A
±20 ±20 V
250 250 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 2.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

960 960 mJ

-55 to 150 -55 to 150

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V, (Figure 10)

IRFP460 500 - - V

IRFP462 500 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VGS

DSS

D(ON)VDS

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

o

- - 250 µA

x r

DS(ON)MAX

, VGS = 0V TJ = 125

DSS,

, VGS = 10V

IRFP460 20 - - A

IRFP462 17 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSS

DS(ON)ID

VGS = ±20V - - ±100 nA

= 11A, VGS = 10V, (Figures 8, 9)

IRFP460 - 0.24 0.27 Ω

IRFP462 - 0.27 0.35 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS≥ 50V, IDS > 11A, (Figure 12) 13 19 - S

fs

= 250V, ID = 21A, RGS = 4.3Ω, RD = 12Ω,

-2335ns

VGS = 10V, (Figures 17, 18) MOSFET Switching

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate-Drain)

Times are Essentially Independent of Operating

r

Temperature

f

= 10V, ID = 21A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figures 14, 19, 20)

G(REF)

DSS,

- 81 120 ns

- 85 130 ns

-6598ns

- 120 190 nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

OperatingTemperature

gs

gd

-18-nC

-62-nC

5-2

IRFP460, IRFP462

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VDS = 25V, VGS = 0V, f = 1MHz, (Figure 10) - 4100 - pF

ISS

OSS

RSS

Measured from the

D

Drain Lead, 6mm
(0.25in) from Package to
Center of Die

Measured from the

S

Source Lead, 6mm

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

- 480 - pF

-84-pF

- 5.0 - nH

-13-nH

(0.25in) from Header to
Source Bonding Pad

θJC

Free Air Operation - - 30oC/W

θJA

G

L

S

S

- - 0.50oC/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SD

SDM

Modified MOSFET
Symbol Showing the

D

Integral Reverse
P-N Junction Rectifier

TJ = 25oC, ISD = 21A, VGS = 0V, (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 280 580 1200 ns

rr

TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 3.8 8.1 18 µC

RR

G

S

- - 20 A

- - 80 A

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 4.3mH, RGS= 25Ω, Peak IAS = 20A (Figures 15, 16).

5-3

IRFP460, IRFP462

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

C/W)

o

0.5

0.1

0.2

0.1

0.05

0.02

-2

10

0.01

, THERMAL IMPEDANCE (

θJC

Z

-3

10

10

SINGLE PULSE

-5

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (S)

20

16

IRFP460

12

8

, DRAIN CURRENT (A)

D

I

4

0

25 75 125

IRFP462

50 100

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

θJC

1/t2

x R

2

θJC

+ T

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

0.1 1 10

150

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

10

5
2

IRFP460

2

10

5

IRFP462
IRFP460

2

IRFP462

10

5
2

, DRAIN CURRENT (A)

D

1

I

5

T

= 25oC

C

= MAX RATED

T

J

2

SINGLE PULSE

0.1
12 5102 5

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
AREA IS LIMITED
BY r

DS(ON)

2

10

10µs
100µs

1ms

10ms

DC

25

3

10

40

32

24

16

, DRAIN CURRENT (A)

D

I

8

0

0 50 100 150 200

VGS = 10V
VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V
VGS = 4.0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

80µs PULSE TEST

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5-4

250

IRFP460, IRFP462

Typical Performance Curves

40

80µs PULSE TEST

32

24

16

, DRAIN CURRENT (A)

D

I

8

0

0

4

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.5

80µs PULSE TEST

2.0

1.5

VGS = 10V

812 20

Unless Otherwise Specified (Continued)

2

10

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V
VGS = 4.0V

16

VGS = 10V

10

1

, DRAIN CURRENT(A)

0.1

D

I

-2

10

3.0

2.4

1.8

VDS≥ 50V
80µs PULSE TEST

TJ = 150oC

TJ = 25oC

0246810

VGS = 10V, ID = 11A

V

, GATE TO SOURCE VOLTAGE (V)

GS

1.0

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

DS(ON)

0.5

r

0

0 20 40 60 80 100

, DRAIN CURRENT (A)

I

D

VGS = 20V

FIGURE 8. DRAIN TO SOURCE ON RESIST ANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 0 40
T

, JUNCTION TEMPERATURE (oC)

J

80

120

160

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

-40 0 40
T

J

, JUNCTION TEMPERATURE (oC)

80

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

10000

8000

C

ISS

6000

C

4000

C, CAPACITANCE (pF)

2000

0

12 5102 5

OSS

C

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS= 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

= CDS+ C

OSS

120

GD

GD

GD

160

10

2

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5-5

IRFP460, IRFP462

Typical Performance Curves

40

VDS≥ 50V
80µs PULSE TEST

32

24

16

, TRANSCONDUCTANCE (S)

fs

8

g

0

0 8 16 24 32 40

TJ = 25oC

TJ = 150oC

, DRAIN CURRENT (A)

I

D

Unless Otherwise Specified (Continued)

2

10

5

2

10

5

TJ = 150oC

2
1
5

, SOURCE TO DRAIN CURRENT (A)

2

SD

I

0.1
0 0.4 0.8 1.2 1.6 2.0

TJ = 25oC

V

, SOURCE TO DRAIN VOLTAGE (V)

SD

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 21A

V

= 400V

16

12

DS

VDS = 250V

= 100V

V

DS

8

, GATE TO SOURCE (V)

GS

4

V

0

0 40 80 120 160 200

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5-6

IRFP460, IRFP462

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

G

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

DUT

0

I

V

DS

G(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

5-7