Page 1
SMPS MOSFET
Document Number: 91236
www.vishay.com
1
PD-94809
IRFP460NPbF
Applications
HEXFET® Power MOSFET
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Switch Mode Power Supply ( SMPS )
Lead-Free
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective Coss specified ( See AN1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
I
DM
PD @TC = 25°C Power Dissipation 280 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 80
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
500V 0.24Ω 20A
TO-247AC
°C
D
Typical SMPS Topologies:
Full Bridge
PFC Boost
Notes through are on page 8
11/3/03
Page 2
IRFP460NPbF
Document Number: 91236
www.vishay.com
2
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 200 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.24 Ω VGS = 10V, ID = 12A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 10 ––– ––– S VDS = 50V, ID = 12A
Total Gate Charge ––– ––– 124 ID = 20A
Gate-to-Source Charge ––– ––– 40 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 57 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 23 ––– VDD = 250V
Rise Time ––– 87 ––– ID = 20A
Turn-Off Delay Time ––– 34 ––– RG = 4.3Ω
ns
Fall Time ––– 33 ––– RD = 13Ω,See Fig. 10
Input Capacitance ––– 3540 ––– VGS = 0V
Output Capacitance ––– 350 ––– VDS = 25V
Reverse Transfer Capacitance ––– 30 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 3930 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 95 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 340 mJ
Avalanche Current ––– 20 A
Repetitive Avalanche Energy ––– 28 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V
Reverse Recovery Time ––– 550 825 ns TJ = 25°C, IF = 20A
Reverse RecoveryCharge ––– 7.2 10.8 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
20
80
showing the
A
p-n junction diode.
D
G
S
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IRFP460NPbF
Document Number: 91236
www.vishay.com
3
100
10
1
0.1
0.01
D
I , Drain-to-Source Current (A)
0.001
0.1 1 10 100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
°
T = 150 C
J
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
3.5
3.0
I =
D
20A
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
Page 4
IRFP460NPbF
Document Number: 91236
www.vishay.com
4
100000
10000
)
F
p
(
e
c
n
a
t
i
1000
c
a
p
a
C
,
C
100
10
1 10 100 1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
Ciss
Coss
Crss
+ Cgd, C
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
SD
SHORTED
ds
V = 0 V
GS
20
I =
20A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100 120 140
Q , Total Gate Charge (nC)
G
V = 400V
DS
V = 250V
DS
V = 100V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
)
A
(
t
100
n
e
r
r
u
C
e
c
r
u
10
o
S
o
t
n
i
a
r
D
1
,
TA = 25°C
D
I
TJ = 150°C
Single Pulse
0.1
10 100 1000 10000
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
13
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Page 5
IRFP460NPbF
Document Number: 91236
www.vishay.com
5
R
D.U.T.
D
+
V
DD
-
20
15
R
V
DS
V
GS
G
10V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
I , Drain Current (A)
5
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
thJC
0.01
Thermal Response (Z )
0.001
0.20
0.1
0.10
0.05
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
P
DM
1 2
J DM thJC C
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRFP460NPbF
A
Document Number: 91236
www.vishay.com
6
15V
DRIVER
+
-
V
R
G
20V
V
DS
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
DD
750
TOP
600
450
300
150
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
8.9A
12.6A
20A
°
Fig 12b. Unclamped Inductive Waveforms
Q
10 V
Q
GS
V
G
G
Q
GD
Charge
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling R esistors
+
V
DS
-
I
D
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Page 7
IRFP460NPbF
Document Number: 91236
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRFP460NPbF
Document Number: 91236
www.vishay.com
8
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
Notes:
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3.65 (.143)
3.55 (.140)
0.25 (.010)
5.50 (.217)
4.50 (.177)
M
CA
D
MMB
S
20.30 (. 800)
19.70 (. 775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
3X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
EXAMPL E:
THIS IS AN IRFPE30
WITH ASSE MBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 20 00
IN TH E ASSEMBLY LIN E "H"
Note: "P" in assembly line
positio n indicates "L ead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMB LY
LOT COD E
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
IRFPE30
56 57
5.30 (.209)
4.70 (.185)
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
LEAD ASSIGNMENTS
Hexfet
0.80 (.031)
0.40 (.016)
035H
LEAD ASSIGNMENTS
1 - Gate
2 - Drain
3 - Source
4 - Drain
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBT
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 1.8mH
J
= 20A. (See Figure 12)
AS
≤ 20A, di/dt ≤ 140A/µs, V
DD
≤ V
(BR)DSS
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
,
TJ ≤ 150°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
11/03
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
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for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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