Datasheet IRFP460 Datasheet (Philips)

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

d

= 500 V

DSS

• Stable off-state characteristics

• High thermal cycling performance I

• Low thermal resistance

g

s

R

DS(ON)

= 20 A

D

≤ 0.27 Ω

GENERAL DESCRIPTION PINNING SOT429 (TO247)

N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.

The IRFP460 is supplied in the

tab drain

2

1

3

SOT429 (TO247) conventional
leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

I

DM

P

D

Tj, T

Drain-source voltage Tj = 25 ˚C to 150˚C - 500 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V
Gate-source voltage - ± 30 V
Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 20 A

Tmb = 100 ˚C; VGS = 10 V - 12.4 A
Pulsed drain current Tmb = 25 ˚C - 80 A
Total dissipation Tmb = 25 ˚C - 250 W
Operating junction and - 55 150 ˚C

stg

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

E

AR

IAS, I

1 pulse width and repetition rate limited by Tj max.

September 1999 1 Rev 1.000

Non-repetitive avalanche Unclamped inductive load, IAS = 20 A; - 1300 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
Repetitive avalanche energy1IAR = 20 A; tp = 2.5 µs; Tj prior to - 32 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive - 20 A

AR

avalanche current

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V

(BR)DSS

∆T

j

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

Thermal resistance junction - - 0.5 K/W
to mounting base
Thermal resistance junction SOT429 package, in free air - 45 - K/W
to ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 500 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 10 A - 0.2 0.27 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 10 A 13 18 - S
Drain-source leakage current VDS = 500 V; VGS = 0 V - 2 50 µA

VDS = 400 V; VGS = 0 V; Tj = 125 ˚C - 100 1000 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Total gate charge ID = 20 A; V
Gate-source charge - 12 18 nC

= 400 V; VGS = 10 V - 147 190 nC

DD

Gate-drain (Miller) charge - 78 100 nC
Turn-on delay time VDD = 250 V; RD = 12 Ω; - 23 - ns

Turn-on rise time RG = 3.9 Ω -72-ns
Turn-off delay time - 150 - ns
Turn-off fall time - 75 - ns

Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 3000 - pF

Output capacitance - 480 - pF
Feedback capacitance - 270 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

September 1999 2 Rev 1.000

Continuous source current Tmb = 25˚C - - 20 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 80 A
diode)
Diode forward voltage IS = 20 A; VGS = 0 V - - 1.5 V

Reverse recovery time IS = 20 A; VGS = 0 V; dI/dt = 100 A/µs - 900 - ns
Reverse recovery charge - 15 - µC

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

P

D

PHW20N50E

D = tp/T

tp

T

Zth j-mb (K/W)

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

single pulse

0.001
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Pulse width, tp (s)

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

Drain Current, ID (A)

20

Tj = 25 C

18
16
14
12
10

8
6
4
2
0

012345

Drain-Source Voltage, VDS (V)

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

PHW20N50E

VGS = 10 V

8 V

5 V

4.8 V

4.6 V

4.4 V

4.2 V
4 V

.

GS

Peak Pulsed Drain Current, IDM (A)

100

10

RDS(on) = VDS/ ID

1

0.1
10 100 1000

Drain-Source Voltage, VDS (V)

d.c.

PHW20N50E

tp = 10 us

100us

1 ms

10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Drain-Source On Resistance, RDS(on) (Ohms)

0.5
4V

4.2V

0.45

0.4

0.35

0.3

0.25

0.2

0 2 4 6 8 101214161820

4.6 V

4.4 V

4.8V

Drain Current, ID (A)

5V

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

PHW20N50E

Tj = 25 C

VGS = 6 V

10V

.

GS

September 1999 3 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

Drain current, ID (A)

30

VDS > ID X RDS(ON)

25

20

15

10

5

0

012345678

Gate-source voltage, VGS (V)

150 C

PHW20N50E

Tj = 25 C

Fig.7. Typical transfer characteristics.

ID = f(VGS); parameter T

Transconductance, gfs (S)

20

VDS > ID X RDS(ON)

18
16
14
12
10

8
6
4
2
0

0 5 10 15 20 25 30

Drain current, ID (A)

Tj = 25 C

Fig.8. Typical transconductance

gfs = f(ID); parameter T

j

PHW20N50E

150 C

.

j

VGS(TO) / V

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage

V

= f(Tj); conditions: ID = 0.25 mA; VDS = V

GS(TO)

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

0 1 2 3 4

SUB-THRESHOLD CONDUCTION

2 %

typ

VGS / V

Fig.11. Sub-threshold drain current.

ID = f(V

; conditions: Tj = 25 ˚C; VDS = V

GS)

.

GS

98 %

GS

a

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

Normalised RDS(ON) = f(Tj)

Tj / C

= f(Tj); ID = 10 A; VGS = 10 V

Capacitances, Ciss, Coss, Crss (pF)

10000

1000

100

0.1 1 10 100
Drain-Source Voltage, VDS (V)

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

PHW20N50E

, C

iss

oss

Ciss

Coss
Crss

, C

rss

.

September 1999 4 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

Gate-source voltage, VGS (V)

15
14

ID = 20A

13

Tj = 25 C

12
11
10

9
8
7
6
5
4
3
2
1
0

0 25 50 75 100 125 150 175 200

Gate charge, QG (nC)

300V

200V

VDD = 400 V

PHW20N50E

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); parameter V

GS

Switching times, td(on), tr, td(off), tf (ns)

600

500

400

300

200

100

0

0 5 10 15 20 25 30

Gate resistance, RG (Ohms)

DS

PHW20N50E

td(off)

tr, tf

td(on)

Source-Drain Diode Current, IF (A)

50

VGS = 0 V

45
40
35
30
25
20
15
10

5
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

Drain-Source Voltage, VSDS (V)

150 C

PHW20N50E

Tj = 25 C

Fig.16. Source-Drain diode characteristic.

IF = f(V

Non-repetitive Avalanche current, IAS (A)

100

10

VDS

tp

ID

1
1E-06 1E-05 1E-04 1E-03 1E-02

); parameter T

SDS

Tj prior to avalanche = 25 C

125 C

PHW20N50E

Avalanche time, tp (s)

j

Fig.14. Typical switching times; t

d(on)

, tr, t

, tf = f(RG)

d(off)

Fig.17. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tp);

unclamped inductive load

Normalised Drain-source breakdown voltage

1.15

V(BR)DSS @ Tj
V(BR)DSS @ 25 C

1.1

1.05

1

0.95

0.9

0.85

-100 -50 0 50 100 150
Tj, Junction temperature (C)

Fig.15. Normalised drain-source breakdown voltage

V

(BR)DSS/V(BR)DSS 25 ˚C

= f(Tj)

;

Maximum Repetitive Avalanche Current, IAR (A)

100

10

1

0.1
1E-06 1E-05 1E-04 1E-03 1E-02

Avalanche time, tp (s)

Tj prior to avalanche = 25 C

125 C

PHW20N50E

Fig.18. Maximum permissible repetitive avalanche

current (IAR) versus avalanche time (tp)

September 1999 5 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

MECHANICAL DATA

Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429

α

E
P

R

(1)

L

1

b

2

123

b

DIMENSIONS (mm are the original dimensions)

A

A

UNIT

mm

Note

1. Tinning of terminals are uncontrolled within zone L1.

1

1.9

5.3

1.7

4.7

OUTLINE
VERSION

SOT429 TO-247

b

1

1.2

2.2

0.9

1.8

IEC JEDEC EIAJ

b

2

3.2

2.8

c

0.9

0.621201615

b
1

ee

DbE

REFERENCES

q

S

D

Y

L

w

M

0 10 20 mm

scale

L

16154.0

(1)

1

3.6

e

5.45

A

A

1

Q

3.7

2.6

3.3

5.3

2.4

c

7.5

3.5

7.1

3.3

EUROPEAN

PROJECTION

β

wSRqQPLY

15.7

0.4

15.3

ISSUE DATE

α

6°
4°

98-04-07
99-08-04

17°
13°

β

Fig.19. SOT429; pin 2 connected to mounting base

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT429 envelope.

3. Epoxy meets UL94 V0 at 1/8".

September 1999 6 Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistors IRFP460
Avalanche energy rated

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1999 7 Rev 1.000