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PD- 95663
Document Number: 91232
www.vishay.com
1
SMPS MOSFET
IRFP450NPbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.8 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 1.6 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
500V 0.37Ω 14A
TO-247AC
D
°C
Typical SMPS Topologies
l Two transistor Forward
l Half Bridge and Full Bridge
l PFC Boost
Notes through are on page 8
7/30/04
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IRFP450NPbF
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Document Number: 91232
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 110 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.59 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.37 Ω VGS = 10V, ID = 8.4A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
= 30V
GS
nA
V
= -30V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 7.9 ––– ––– S VDS = 50V, ID = 8.4A
Total Gate Charge ––– ––– 77 ID = 14A
Gate-to-Source Charge ––– ––– 26 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 34 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 20 –– – VDD = 250V
Rise Time ––– 63 – –– ID = 14A
Turn-Off Delay Time ––– 29 – –– RG = 6.2Ω
ns
Fall Time ––– 25 ––– VGS = 10V,See Fig. 10
Input Capacitance ––– 2260 ––– VGS = 0V
Output Capacitance ––– 210 ––– VDS = 25V
Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2410 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 59 –– – VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 170 mJ
Avalanche Current ––– 14 A
Repetitive Avalanche Energy ––– 20 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.4 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 430 650 ns TJ = 25°C, IF = 14A
Reverse RecoveryCharge ––– 3.7 5.6 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
14
56
showing the
A
p-n junction diode.
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IRFP450NPbF
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Document Number: 91232
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100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 10
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM
6.0V
6.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
6.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
1
1 10 10
V , Drain-to-Sou rce Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
14A
°
T = 150 C
J
10
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
6.0 7.0 8.0 9.0 10
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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IRFP450NPbF
Document Number: 91232
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100000
10000
)
F
p
(
e
1000
c
n
a
t
i
c
a
p
100
a
C
,
C
10
1
1 10 100 1000
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
iss
C
rss
C
oss
VDS, Drain-to-Source Volt age (V )
gd
Ciss
Coss
Crss
SHORTED
ds
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
°
T = 150 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
20
I =
14A
D
V = 400V
DS
V = 250V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
DS
V = 100V
DS
FOR TEST CIRCUIT
0
0 20 40 60 80
Q , Total Gate C harge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
u
10
o
S
-
o
t
-
n
i
a
r
1
D
,
D
Tc = 25°C
I
Tj = 150°C
Single Pulse
0.1
1 10 100 1000 10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V )
DS
100µsec
1msec
10msec
13
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFP450NPbF
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Document Number: 91232
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R
D.U.T.
D
V
DD
14
12
10
V
DS
V
GS
R
G
8
6
D
4
I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 10a. Switching Time Test Circuit
DS
0%
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0%
GS
Fig 9. Maximum Drain Current Vs.
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty fa c to r D = t / t
2. Peak T =P x Z + T
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP450NPbF
V
S
Current Regulator
I
A
Document Number: 91232
www.vishay.com
6
15V
V
DS
R
G
20V
t
L
D.U.T
I
AS
0.01
p
Ω
DRIVER
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
AS
Fig 12b. Unclamped Inductive Waveforms
300
TOP
250
200
+
V
DD
-
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Tempe r ature ( C)
J
BOTTOM
I
D
6.3A
8.9A
14A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
V
GS
Q
GS
Q
GD
G
Charge
Fig 13a. Basic Gate Charge Waveform
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
+
V
D
-
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IRFP450NPbF
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Document Number: 91232
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7
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
e-Applied
oltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
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IRFP450NPbF
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Document Number: 91232
www.vishay.com
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TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRFPE30
W I TH ASSEMBLY
LOT CODE 5657
ASSE MBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNATIONAL
RECTIFIE R
LOGO
ASSEMBLY
LO T CODE
IRFPE 30
56 57
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
C
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 1.7mH
J
AS
≤ 14A, di/dt ≤ 510A/µs, V
= 14A. (See Figure 12)
≤ V
DD
(BR)DSS
,
oss
as C
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
PART NUMBER
035H
DATE CO DE
YEAR 0 = 200
WEEK 35
LINE H
eff. is a fixed capacitance that gives the same charging time
oss
while V
is rising from 0 to 80% V
DS
DSS
TAC Fax: (310) 252-7903
07/04
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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