Datasheet IRFP3703 Datasheet (International Rectifier)

PD - 93917A

SMPS MOSFET

IRFP3703

HEXFET® Power MOSFET

Applications

l Synchronous Rectification l Active ORing

Benefits

l Ultra Low On-Resistance

l Low Gate Impedance to Reduce Switching

Losses

l Fully Avalanche Rated

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210  ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100  A I

DM

PD @TC = 25°C Power Dissipation 230 W PD @TA = 25°C Power Dissipation 3.8

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J, TSTG

Pulsed Drain Current  1000

Linear Derating Factor 1.5 W/°C Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 175 °C

V

DSS

R

DS(on)

max I

30V 0.0028Ω 210A

TO-247AC

D



Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.65 Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W Junction-to-Ambient ––– 40

Typical SMPS Topologies

l Forward and Bridge Converters with Synchronous Rectification for Telecom and

Industrial Applications

l Offline High Power AC/DC Convertors using Synchronous Rectification

Notes  through  are on page 8

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5/18/01

IRFP3703

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V 

oss

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

––– 2.3 2.8 VGS = 10V, ID = 76A  ––– 2.8 3.9 VGS = 7.0V, ID = 76A 

mΩ

Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 24V, VGS = 0V

µA

nA

VGS = -20V

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 150 ––– ––– S VDS = 24V, ID = 76A Total Gate Charge ––– 20 9 ––– ID = 76A Gate-to-Source Charge ––– 62 ––– nC VDS = 24V Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V,  Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V Rise Time ––– 123 – –– ID = 76A Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω

ns

Fall Time ––– 24 ––– VGS = 10V  Input Capacitance ––– 8250 ––– VGS = 0V Output Capacitance ––– 3000 ––– VDS = 25V Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

E

AR

Single Pulse Avalanche Energy ––– 1700 mJ Avalanche Current ––– 76 A Repetitive Avalanche Energy ––– 23 mJ

Diode Characteristics

Parameter Min. Typ. Max. Unit s Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

210

1000

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V  Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, VDS = 16V Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRFP3703

10000

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

10000

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output Characteristics

2.0

260A

I =

D

1.5

°

1000

100

D

I , Drain-to-Source Current (A)

10

4.0 5.0 6.0 7.0 8.0 9.0 10.0

Fig 3. Typical Transfer Characteristics

T = 25 C

J

T = 175 C

J

V = 15V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

°

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

V =

10V

GS

°

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFP3703

14000

12000

10000

8000

6000

C, Capacitance (pF)

4000

2000

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C + C

C

C SHORTED

iss

oss

rss

C C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

76A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 40 80 120 160 200 240 280 320

Q , Total Gate Charge (nC)

G

V = 24V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

°

T = 175 C

J

10

°

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

1000

100

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C Single Pulse

10

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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250

200

LIMITED BY PACKAGE

IRFP3703

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

150

100

D

I , Drain Current (A)

50

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

1

D = 0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

Thermal Response (Z )

0.001

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

P

DM

1 2

J DM thJC C

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP3703

A

15V

DRIVER

+

-

V

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

DD

6000

TOP

5000

4000

3000

2000

1000

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

°

D 31A 54A 76A

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

3mA

Current Sampling Resistors

+

V

D.U.T.

I

G

DS

-

I

D

10 V

Q

G

Q

GS

V

G

Q

GD

12V

V

GS

Charge

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFP3703

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

Driver Gate Drive

P.W.

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

-

VGS=10V

V

DD

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

®

Power MOSFET

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IRFP3703

(

)

(

)

(

)

(

)

(

)

(

)

(

)

TO - 247 Package Outline

Dimensions are shown in millimeters (inches)

15.90 (.6 26

15.30 (.6 02

20.30

.800

19.70 (.775

14.80 (.583

14.20 (.559

2.40 (.094

2.00 (.079 2X

.215

5.45 2X

- B -

12

3

3.40 (.1 33

3.00 (.1 18

1.40 (.056

3X

1.00 (.039

0.25

- A -

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 I

≤ 76A, di/dt ≤ 100A/µs, V

SD

T

≤ 175°C

J

= 25°C, L = 0.6mH

J

= 76A.

AS

DD

≤ V

(BR)DSS

3.65 (.143

3.55 (.140

0.25 (.010

5.50 (.217

5.50

2X

4.50 (.1 77

- C -

4.30

.170

3.70 (.145

.010

M

,

- D -

5.30

.20 9

MMB

.2 17

CA

D

S

4.70 (.18 5

2.50 (.089

1.50 (.059 4

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSIO N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO - 2 47 - A C .

0.80

3X

0.40 (.016

2.60 (.10 2

2.20 (.08 7

.031

LEAD ASS IGNMENTS

1 - GAT E 2 - DRAIN 3 - SOURCE 4 - DRAIN

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

oss

while V

is rising from 0 to 80% V

DS

DSS

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 90A

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.5/01

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