Datasheet IRFP350 Datasheet (Intersil)

IRFP350

Data Sheet July 1999

16A, 400V, 0.300 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17434.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP350 TO-247 IRFP350

NOTE: When ordering, include the entire part number.

File Number

Features

• 16A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.300Ω

Components to PC Boards”

Symbol

D

G

2319.4

Packaging

DRAIN

(FLANGE)

S

JEDEC STYLE TO-247

TOP VIEW

SOURCE

DRAIN

GATE

4-335

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFP350

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP350 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

D
DM
GS

D

400 V
400 V

16
10

64 A
±20 V
180 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

700 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
DraintoSource OnResistance(Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

Q

g

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 16 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 8.9A (Figures 8, 9) - 0.250 0.300 Ω
VDS= 2 x VGS, ID = 8.0A (Figure 12) 8.0 10 - S
VDD= 200V, ID= 16A, RGS = 6.2Ω, VGS = 10V,

RL = 12.3Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1218ns

-5177ns

- 75 110 ns

-4771ns

VGS = 10V, ID = 16A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figure 14)

G(REF)

Gate Charge is Essentially Independent of Operating
Temperature

DSS

.

- 87 130 nC

-10- nC

-33- nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 2000 - pF

- 400 - pF

- 100 - pF

Measured Between the
ContactScrewon Header
that is Closer to Source
andGate Pins andCenter
of Die

Measured from the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.70oC/W

Free Air Operation - - 30

o

C/W

4-336

IRFP350

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 40V, starting TJ = 25oC, L = 5.66mH, RG = 50Ω, peak IAS = 15A.

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - 16 A

- - 64 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 16A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs 270 - 1300 ns

rr

TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs 1.7 - 8.1 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

-2

10

, NORMALIZED TRANSIENT

θJC

Z

THERMAL IMPEDANCE

-3

10

10

-5

SINGLE PULSE

10

-4

10

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t

, RECTANGULAR PULSE DURATION (S)

1

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

θJC

2

x R

2

θJC+TC

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDM x Z

0.1 1 10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-337

IRFP350

Typical Performance Curves

3

10

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

2

10

10

, DRAIN CURRENT (A)

1

D

I

TC = 25oC
TJ = MAX RATED
SINGLE PULSE

0.1
110

VDS, DRAIN TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

25

20

10µs
100µs

1ms

10ms

DC

2

10

3

10

15

10

, DRAIN CURRENT (A)

D

I

VGS = 10V

5

0

VGS = 4.0V

40 80 120 1600 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6.0V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

20

VGS = 10V

VGS = 6.0V

2

10

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 2 x V

V

DS

GS

15

10

, DRAIN CURRENT (A)

D

I

5

0

2468010
VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

10

TJ = 150oC

1

, DRAIN CURRENT (A)

D

I

0.1
0246810

VSD, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.75

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

0.60

39

VGS = 10V

VGS = 20V

52

0.45

0.30

, DRAIN TO SOURCE

ON RESISTANCE

0.15

DS(ON)

r

0

065

13 26

ID,DRAIN CURRENT (A)

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 8.9A, VGS = 10V

I

D

2.0

1.5

1.0

0.5

ON RESISTANCE VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

0 60 120 160

-20-40 20 40 100 140
T

, JUNCTION TEMPERATURE (oC)

J

80-60

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-338

FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRFP350

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-20 20 100 160

0-40 40 80 120 140

T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

60-60

FIGURE 10. NORMALIZED DRAINTOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 2 x V

V

DS

20

15

GS

TJ = 25oC

5000

4000

RSS

C

C

OSS

3000

2000

C, CAPACITANCE (pF)

1000

0

12 102 5

C

5

VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

VGS = 0V, f = 1MHz

= CGS + C

C
C

C

ISS
RSS

OSS

= C

≈ C

GD

DS

GD

+ C

GS

10

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2

10

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

10

2

10

, TRANSCONDUCTANCE (S)

5

fs

g

0

TJ = 150oC

TJ = 150oC

5101520025

ID, DRAIN CURRENT (A)

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1
0 0.4 0.8 1.2 1.6 2.0

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE

20

ID = 16A

16

VDS = 80V

12

8

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

30 60 90 1200 150

VDS = 200V

Qg, GATE CHARGE (nC)

V

DS

= 320V

4-339

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

IRFP350

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

R

G

V

GS

FIGURE 17. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

t

ON

t

d(ON)

t

R

L

+

V

DD

-

V

DS

0

r

90%

10%

DUT

V

GS

10%

0

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

10%

90%

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

GS

G

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-340

D

S

CURRENT

I

D

SAMPLING

DUT

V

DS

0

V

DS

I

G(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

IRFP350

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