Datasheet IRFP340 Datasheet (Intersil)

IRFP340

Data Sheet July 1999

11A, 400V, 0.550 Ohm, N-Channel
Power MOSFET

This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effecttransistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.

Formerly developmental type TA17424.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP340 TO-247 IRFP340

NOTE: When ordering, include the entire part number.

File Number

Features

• 11A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.550Ω

Components to PC Boards”

Symbol

D

G

2088.3

Packaging

DRAIN

(FLANGE)

S

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

4-329

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFP340

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP340 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

D
DM
GS

D

400 V
400 V

11 A

6.8 A
44 A

±20 V

150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

480 mJ

-55 to 150

300

260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage I
Drain to Source OnResistance(Note2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

, VGS = 10V 11 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 5.5A (Figures 8, 9) - 0.47 0.55 Ω
VDS≥ 50V, ID = 5.5A (Figure 12) 6.1 9.1 - S
VDD= 200V, ID≈ 11A, RGS = 9.1Ω, RL = 17.4Ω

MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1421ns

-2741ns

-5075ns

-2436ns

= 10V, ID = 10A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figure 14) Gate Charge is

g(REF)

DSS,

Essentially Independent of Operating Temperature

-4163nC

- 6.0 - nC

-23-nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1250 - pF

- 300 - pF

-80- pF

Measured from the Drain
Lead, 6mm (0.25in) fromthe
Package totheCenter of the
Die

Measured from the Source
Lead, 6mm (0.25in) from
Header to the Source
Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.83 oC/W

Free Air Operation - - 30 oC/W

4-330

IRFP340

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 7.0mH, RG= 50Ω, peak IAS = 11A.

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - 11 A

- - 44 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 11A, VGS = 0V (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs 170 370 790 ns

rr

TJ = 25oC, ISD= 10A, dISD/dt = 100A/µs 1.6 3.8 8.2 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

-2

10

THERMAL IMPEDANCE

-3

10

0.02

0.01

-5

10

SINGLE PULSE

-4

10

10

, NORMALIZED

θJC

Z

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t1, RECTANGULAR PULSE DURATION (s)

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

θJC

x R

2

θJC

2

+ T

C

NOTES:
DUTY FACTOR: D = t1/t
TJ= PDM x Z

0.1 1 10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-331

IRFP340

Typical Performance Curves

3

10

OPERATION IN THIS
REGION IS LIMITED
BY r

2

10

10

, DRAIN CURRENT (A)

1

D

I

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

0.1
110

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

Unless Otherwise Specified (Continued)

15

12

10µs

100µs

1ms

10ms

DC

2

10

3

10

, DRAIN CURRENT (A)

D

I

VGS = 6.0V

= 10V

V

GS

9

6

3

0

40 80 120 1600 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

12

9

VGS = 10V

VGS = 6.0V

VGS = 5.5V

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

≥ 50V

V

DS

10

6

, DRAIN CURRENT (A)

D

I

3

0

2468010
VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 5.0V

VGS = 4.5V

VGS = 4V

TJ = 150oC

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0.1
0246810

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

4

3

VGS = 10V

2

, DRAIN TO SOURCE

ON RESISTANCE

DS(ON)

1

R

0

050

10 20

ID, DRAIN CURRENT (A)

30

VGS = 20V

40

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

I

= 5.5A, VGS = 10V

D

2.4

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

0

-20-40 20 40 100 140 160
T

, JUNCTION TEMPERATURE (oC)

J

60 120

80-60

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-332

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRFP340

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-20 20 100

0-40 40 80 120 140

T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

60-60

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

≥ 50V

V

DS

12

TJ = 25oC

9

TJ = 150oC

6

, TRANSCONDUCTANCE (S)

3

fs

g

0

4 8 12 16020

ID, DRAIN CURRENT (A)

160

2500

2000

1500

1000

C, CAPACITANCE (pF)

500

0

C

RSS

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

C

OSS

ISS

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

2

≈ C

GD
DS

+ C

C

10

GD

GS

10

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

10

TJ = 150oC

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1
0 0.3 0.6 0.9 1.2 1.5

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

3

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 10A

16

VDS = 80V

12

8

4

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

12 24 36 48060

VDS = 200V

VDS = 320V

Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-333

IRFP340

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

G

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

4-334

S

CURRENT

I

D

SAMPLING

V

DS

I

g(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

IRFP340

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