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AUTOMOTIVE MOSFET
PD -93906A
IRFP2907
HEXFET® Power MOSFET
Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
D
V
= 75V
DSS
R
DS(on)
= 4.5mΩ
ID = 209A
S
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
®
Power MOSFETs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 209
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 148 A
I
DM
PD @TC = 25°C Power Dissipation 470 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 840
Linear Derating Factor 3.1 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 1970 mJ
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.32
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
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9/7/00
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IRFP2907
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 2320 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 75 –– – –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 3.6 4.5 mΩ VGS = 10V, ID = 125A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 130 ––– ––– S VDS = 25V, ID = 125A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 410 620 ID = 125A
Gate-to-Source Charge ––– 92 140 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 140 210 VGS = 10V
Turn-On Delay Time ––– 23 ––– VDD = 38V
Rise Time ––– 190 ––– ID = 125A
Turn-Off Delay Time ––– 130 ––– RG = 1.2Ω
ns
Fall Time ––– 130 ––– VGS = 10V
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 13000 ––– VGS = 0V
Output Capacitance ––– 2100 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 500 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 9780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1360 ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
209
840
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 125A, VGS = 0V
Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 125A
Reverse RecoveryCharge – –– 880 1320 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.25mH
J
= 125A. (See Figure 12).
AS
≤ 125A, di/dt ≤ 260A/µs, V
DD
≤ V
(BR)DSS
as C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
,
Limited by T
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
avalanche performance.
G
G
.
D
S
D
S
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IRFP2907
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
4.5V
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
209A
I =
D
°
T = 175 C
J
100
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRFP2907
20000
16000
12000
8000
C, Capacitance(pF)
4000
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
°
T = 175 C
100
J
SHORTED
ds
20
I =
125A
D
V = 60V
DS
V = 37V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 100 200 300 400 500 600 700
Q , Total Gate Charge (nC)
G
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
1000
BY R
DS(on)
10us
13
10
100us
°
T = 25 C
SD
J
V = 0 V
GS
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
100
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
10
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFP2907
240
LIMITED BY PACKAGE
200
160
120
80
D
I , Drain Current (A)
40
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP2907
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
DD
5000
TOP
4000
3000
2000
1000
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
I
D
51A
88A
125A
°
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
DS
-
I
D
Fig 13b. Gate Charge Test Circuit
3.5
3.0
ID = 250µA
2.5
, Variace ( V )
2.0
GS(th)
V
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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Page 7
1000
IRFP2907
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
0.01
assuming ∆Tj = 25°C due to
avalanche losses
0.05
0.10
10
Avalanche Current (A)
1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
2000
TOP Single Pulse
BOTTOM 10% Duty Cycle
1600
1200
800
ID = 125A
, Avalanche Energy (mJ)
AR
400
E
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
. This is validated for
jmax
2. Safe operation in Avalanche is allowed as long asT
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
avalanche pulse.
= Average power dissipation per single
D (ave)
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
= Allowable avalanche current.
av
7. ∆T = Allowable rise in junction temperature, not to exceed
T
(assumed as 25°C in Figure 15, 16).
jmax
t
Average time in avalanche.
av =
D = Duty cycle in avalanche = t
Z
(D, tav) = Transient thermal resistance, see figure 11)
thJC
av
·f
jmax
is
D (ave)·tav
∆∆
∆T/ Z
∆∆
thJC
Fig 16. Maximum Avalanche Energy
Vs. Temperature
P
= 1/2 ( 1.3·BV·Iav) =
D (ave)
I
av =
E
AS (AR)
∆∆
2
∆T/ [1.3·BV·Zth]
∆∆
= P
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IRFP2907
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 17. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
8 www.irf.com
Page 9
TO - 247 Package Outline
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)
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Dimensions are shown in millimeters (inches)
IRFP2907
.800
20.30
19.70 (.775
14.80 (.583
14.20 (.559
2.40 (.094
2.00 (.079
2X
.215
5.45
2X
15.90 (.6 26
15.30 (.6 02
- B -
12
3
3.40 (.1 33
3.00 (.1 18
1.40 (.056
3X
1.00 (.039
0.25
- A -
2X
4.30
3.70 (.145
.010
3.65 (.143
3.55 (.140
0.25 (.010
5.50 (.217
5.50
4.50 (.1 77
- C .170
M
MMB
.2 17
CA
D
S
- D -
2.50 (.089
1.50 (.059
3X
2.60 (.10 2
2.20 (.08 7
5.30
.20 9
4.70 (.18 5
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO - 2 47 - A C .
0.80
.031
0.40 (.016
LEAD ASS IGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
4 - DRAIN
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