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PD - 95041
Document Number: 91213
www.vishay.com
1
IRFP254NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
G
D
S
V
R
DS(on)
= 250V
DSS
= 125mΩ
I
= 23A
D
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 16 A
I
DM
PD @TC = 25°C Power Dissipation 220 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 7.4 V/ns
T
J
T
STG
Pulsed Drain Current 92
Linear Derating Factor 1.5 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 300 mJ
Avalanche Current 14 A
Repetitive Avalanche Energy 22 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.68
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Typ. Max. Units
2/24/04
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IRFP254NPbF
Document Number: 91213
www.vishay.com
2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 125 mΩ VGS = 10V, ID = 14A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 15 ––– ––– S VDS = 25V, ID = 14A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 250V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 100 ID = 14A
Gate-to-Source Charge ––– ––– 17 nC VDS = 200V
Gate-to-Drain ("Miller") Charge ––– ––– 44 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 125V
Rise Time ––– 34 ––– ID = 14A
Turn-Off Delay Time ––– 37 ––– RG = 3.6Ω
ns
Fall Time ––– 29 ––– VGS = 10V, See Fig. 10
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2040 ––– VGS = 0V
Output Capacitance ––– 260 ––– VDS = 25V
Reverse Transfer Capacitance ––– 62 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 210 310 ns TJ = 25°C, IF = 14A
Reverse Recovery Charge ––– 1.7 2.6 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 14A, di/dt ≤ 460A/µs, V
SD
TJ ≤ 175°C
= 25°C, L = 3.1mH
J
= 14A,VGS=10V
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
23
92
showing the
A
p-n junction diode.
≤ V
DD
(BR)DSS
D
G
S
,
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IRFP254NPbF
Document Number: 91213
www.vishay.com
3
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 175 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
4.0
I =
D
23A
°
T = 175 C
J
10
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
3.0
2.0
(Normalized)
1.0
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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IRFP254NPbF
Document Number: 91213
www.vishay.com
4
4000
3000
)
F
p
(
e
c
n
a
t
i
2000
c
a
p
a
C
,
C
1000
0
Coss
Crss
1 10 100 1000
Ciss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 175 C
J
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
SHORTED
ds
V = 0 V
GS
20
I =
14A
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
D
V = 200V
DS
V = 125V
DS
V = 50V
DS
FOR TEST CIRCUIT
0
0 20 40 60 80 100
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
10
u
o
S
o
t
n
i
a
r
1
D
,
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100 1000 10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
13
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFP254NPbF
Document Number: 91213
www.vishay.com
5
25
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP254NPbF
A
Document Number: 91213
www.vishay.com
6
15V
DRIVER
+
V
DD
-
R
V
20V
V
DS
G
GS
L
D.U.T
I
AS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
600
TOP
500
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
I
D
5.6A
9.8A
14A
°
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
+
V
DS
-
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IRFP254NPbF
Document Number: 91213
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P. W .
Period
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 14. For N-channel HEXFET
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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IRFP254NPbF
Document Number: 91213
www.vishay.com
8
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3.65 (.143)
3.55 (.140)
0.25 (.010)
5.50 (.217)
4.50 (.177)
M
C
D
MMB
A
S
20.30 (. 800)
19.70 (. 775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
3X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRFPE 30
WITH ASSEMBLY
LOT CODE 5657
ASS EMB LED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
positio n indicates "L ead-Free"
INTER NATIONAL
RECTIF IER
LOGO
ASSEMBLY
LOT CODE
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
IRFPE30
56 57
5.30 (.209)
4.70 (.185)
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
LEAD ASSIGNMENTS
Hexfet
0.80 (.031)
0.40 (.016)
035H
LEAD ASSIGNMENTS
1 - Gate
2 - Drain
3 - Source
4 - Drain
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WE EK 35
LINE H
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBT
1 - Gate
2 - Coll ector
3 - Emitter
4 - Coll ector
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
02/04
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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