Page 1
PD - 95007
IRFP250NPbF
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
G
HEXFET® Power MOSFET
D
V
R
DS(on)
= 200V
DSS
= 0.075Ω
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
I
DM
PD @TC = 25°C Power Dissipation 214 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 8.6 V/ns
T
J
T
STG
Pulsed Drain Current 120
Linear Derating Factor 1.4 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 315 mJ
Avalanche Current 30 A
Repetitive Avalanche Energy 21 mJ
Operating Junction and -55 to +175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
www.irf.com 1
Junction-to-Case ––– 0.7
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
2/11/04
Page 2
IRFP250NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 18A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 18A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 123 ID = 18A
Gate-to-Source Charge ––– ––– 21 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 57 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 100V
Rise Time ––– 43 ––– ID = 18A
Turn-Off Delay Time ––– 41 ––– RG = 3.9Ω
ns
Fall Time ––– 33 ––– RD = 5.5Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
4.5
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2159 ––– VGS = 0V
Output Capacitance ––– 315 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 83 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
RG = 25Ω, I
2 www.irf.com
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
30
120
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
Reverse Recovery Time ––– 186 279 ns TJ = 25°C, IF = 18A
Reverse Recovery Charge ––– 1.3 2.0 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 18A, di/dt ≤ 374A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25°C, L = 1.9mH
J
= 18A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
Page 3
IRFP250NPbF
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
3.0
I =
D
30A
100
°
T = 175 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
www.irf.com 3
Page 4
IRFP250NPbF
5000
4000
)
F
p
(
e
3000
c
n
a
t
i
c
a
p
a
2000
C
,
C
1000
0
1 10 100 1000
Ciss
Coss
Crss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
oss
= C
gd
ds
C
+ Cgd, C
+ C
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
SHORTED
ds
1000
16
I =
18A
D
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
V = 160V
DS
V = 100V
DS
V = 40V
DS
100
T = 175 C
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
°
J
°
T = 25 C
J
V = 0 V
GS
V ,Source-to-Drain Voltage (V)
SD
Forward Voltage
Forward Voltage
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
4 www.irf.com
Page 5
35
35
30
30
25
25
20
20
15
15
D
10
I , Drain Current (A)
D
10
I , Drain Current (A)
5
5
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
T , Case Temperature ( C)
C
°
IRFP250NPbF
R
D.U.T.
D.U.T.
D
t
t
d(off)tf
d(off)tf
+
V
DD
-
V
V
DS
DS
V
V
GS
GS
R
R
G
G
10V
10V
Pulse Width ≤ 1 µs
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
V
V
DS
DS
90%
90%
°
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
Case Temperature
Case Temperature
1
D = 0.50
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
0.02
Thermal Response(Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
SINGLE PULSE
(THERMAL RESPONSE)
Note s:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJ C C
www.irf.com 5
Page 6
IRFP250NPbF
A
15V
DRIVER
R
G
20V
V
DS
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
800
TOP
I
D
7.3A
13A
600
+
V
DD
-
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
18A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
6 www.irf.com
+
V
DS
-
Page 7
IRFP250NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
www.irf.com 7
Page 8
IRFP250NPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3.65 (.143)
3.55 (.140)
0.25 (.010)
5.50 (.217)
4.50 (.177)
M
C
D
MMB
A
S
20.30 (. 800)
19.70 (. 775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
3X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRFPE 30
WITH ASSEMBLY
LOT CODE 5657
ASS EMB LED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
positio n indicates "L ead-Free"
INTER NATIONAL
RECTIF IER
LOGO
ASSEMBLY
LOT CODE
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
IRFPE30
56 57
5.30 (.209)
4.70 (.185)
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
LEAD ASSIGNMENTS
Hexfet
0.80 (.031)
0.40 (.016)
035H
LEAD ASSIGNMENTS
1 - Gate
2 - Drain
3 - Source
4 - Drain
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WE EK 35
LINE H
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBT
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
8 www.irf.com
Loading...