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Preliminary Data Sheet PD - 9.1251
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements
of most safety specifications.
IRFP2410
V
= 100V
DSS
R
DS(on)
ID = 61A
= 0.025Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 61
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 A
I
DM
PD @TC = 25°C Power Dissipation 230 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
T
STG
Pulsed Drain Current 240
Linear Derating Factor 1.5 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 830 mJ
Avalanche Current 37 A
Repetitive Avalanche Energy 23 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 0.65
Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W
Junction-to-Ambient –––– –––– 40
Revision 0
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IRFP2410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω VGS = 10V, ID = 37A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 16 ––– ––– S VDS = 25V, ID = 37A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
––– ––– 25 VDS = 100V , VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
µA
nA
Total Gate Charge ––– ––– 180 ID = 37A
Gate-to-Source Charge ––– ––– 30 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 69 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 16 ––– VDD = 50V
Rise Time ––– 100 ––– ID = 37A
Turn-Off Delay Time ––– 120 ––– RG = 6.2Ω
ns
Fall Time ––– 97 ––– RD = 1.3Ω, See Fig. 10
Internal Drain Inductance ––– 5.0 –––
Internal Source Inductance ––– 13 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 4600 ––– VGS = 0V
Output Capacitance ––– 1100 --–– pF VDS = 25V
Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 61
––– ––– 240
Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 37A, VGS = 0V
Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 37A
Reverse Recovery Charge ––– 990 1500 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 270µH
= 37A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
A
≤ 37A, di/dt ≤ 200A/µs, V
DD
≤ V
(BR)DSS
,
Page 3
IRFP2410
A
A
A
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 25°C
1
0.01 0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics,
TC = 25oC
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.01 0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics,
TC = 175oC
3.0
I = 61A
D
2.5
T = 25°C
J
100
10
D
I , Drain-to-Source Current (A)
1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
T = 175°C
J
V = 50V
DS
20µs PULSE WIDTH
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( °C)
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10V
GS
Page 4
IRFP2410
A
A
A
A
8000
6000
4000
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
2000
C
rss
0
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = 37A
D
V = 80V
DS
V = 50V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
DS
V = 20V
DS
FOR TEST CIRCUIT
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
J
100
SD
I , Reverse Drain Current (A)
10
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V , Source-to-Drain Voltage (V)
SD
T = 175°C
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
10µs
100
100µs
1ms
10
D
I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Page 5
IRFP2410
A
R
D.U.T.
D
V
DD
V
DS
V
70
60
GS
R
G
50
40
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
30
20
D
I , Drain Current (Amps)
10
0
25 50 75 100 125 150 175
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1
D = 0.50
thJC
0.01
Thermal Response (Z )
0.001
0.20
0.1
0.10
0.05
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
N otes :
1. D uty fac tor D = t / t
2. P eak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
DM
J
P
D M
t
1
t
2
2
1
thJC
C
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRFP2410
A
10 V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
2000
1600
1200
800
400
AS
V = 25V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( °C)
J
I
TOP 15A
26A
BOTTOM 37A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
10 V
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
Page 7
IRFP2410
Peak Diode Recovery dv/dt Test Circuit
D.U.T
R
G
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
G
V
DD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
Page 8
IRFP2410
A
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
15.90 (.626)
15.30 (.602)
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
- B -
1 2
3
3.40 (.133)
3.00 (.118)
1.40 (.056)
3X
1.00 (.039)
0.25 (.010)
- A -
Part Marking Information
TO-247AC
3.65 (.143)
3.55 (.140)
0.25 (.010)
5.50 (.217)
5.50 (.217)
2X
4.50 (.177)
- C -
4.30 (.170)
3.70 (.145)
M
C A
D
MMB
S
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
5.30 (.209)
4.70 (.185)
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
0.80 (.031)
0.40 (.016)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 3A1Q
INTERNATIONAL
RECTIFIER
IRFPE30
PART NUMBER
LOGO
3A1Q 9302
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW WEEK
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Data and specifications subject to change without notice.
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