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SMPS MOSFET
Document Number: 91207
www.vishay.com
1
PD - 95004
IRFP22N50APbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l Lead-Free
V
DSS
R
DS(on)
max I
500V 0.23Ω 22A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 22
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A
I
DM
PD @TC = 25°C Power Dissipation 277 W
V
GS
dv/dt Peak Diode Recovery dv/dt 4.8 V/ns
T
J
T
STG
Pulsed Drain Current 88
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
D
Typical SMPS Topologies
l Full Bridge Converters
l Power Factor Correction Boost
Notes through are on page 8
2/11/04
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IRFP22N50APbF
Document Number: 91207
www.vishay.com
2
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 264 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.23 Ω VGS = 10V, ID = 13A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 13A
Total Gate Charge ––– ––– 120 ID = 22A
Gate-to-Source Charge ––– ––– 32 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 52 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 26 ––– VDD = 250V
Rise Time ––– 94 ––– ID = 22A
Turn-Off Delay Time ––– 47 ––– RG = 4.3Ω
ns
Fall Time ––– 47 ––– RD = 11Ω,See Fig. 10
Input Capacitance ––– 3450 ––– VGS = 0V
Output Capacitance ––– 513 ––– VDS = 25V
Reverse Transfer Capacitance ––– 27 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 4935 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 137 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 1180 mJ
Avalanche Current ––– 22 A
Repetitive Avalanche Energy ––– 28 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 22A, VGS = 0V
Reverse Recovery Time ––– 570 850 ns TJ = 25°C, IF = 22A
Reverse RecoveryCharge ––– 6.1 9.2 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
22
88
showing the
A
p-n junction diode.
D
G
S
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IRFP22N50APbF
Document Number: 91207
www.vishay.com
3
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
22A
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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IRFP22N50APbF
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Document Number: 91207
www.vishay.com
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100000
10000
1000
100
C, Capacitance (pF)
10
1
1 10 100 1000
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
22A
D
V = 400V
DS
V = 250V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
DS
V = 100V
DS
FOR TEST CIRCUIT
0
0 20 40 60 80 100 120
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
10 100 1000 10000
°
J
V , Drain-to- Source Voltage (V)
DS
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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Document Number: 91207
www.vishay.com
5
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFP22N50APbF
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
1
D = 0.50
thJC
0.20
0.1
0.10
0.05
1 2
P
DM
t
1
t
2
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP22N50APbF
A
A
Document Number: 91207
www.vishay.com
6
15V
DRIVER
+
-
V
R
G
20V
V
DS
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
DD
3000
TOP
2500
2000
1500
1000
500
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
640
630
620
I
D
9.8A
14A
22A
°
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
DS
-
I
D
Fig 13b. Gate Charge Test Circuit
610
600
590
DSav
V , Avalanche Voltage (V)
580
570
0 4 8 12162024
I , Avalanche Current (A)
av
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Page 7
IRFP22N50APbF
Document Number: 91207
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
Page 8
IRFP22N50APbF
Document Number: 91207
www.vishay.com
8
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3.65 (.143)
3.55 (.140)
0.25 (.010)
5.50 (.217)
4.50 (.177)
M
C
D
MMB
A
S
20.30 (. 800)
19.70 (. 775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
123
3.40 (.133)
3.00 (.118)
3X
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRFPE 30
WITH ASSEMBLY
LOT CODE 5657
ASS EMB LED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
positio n indicates "L ead-Free"
INTER NATIONAL
RECTIF IER
LOGO
ASSEMBLY
LOT CODE
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
IRFPE30
56 57
5.30 (.209)
4.70 (.185)
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
LEAD ASSIGNMENTS
Hexfet
0.80 (.031)
0.40 (.016)
035H
LEAD ASSIGNMENTS
1 - Gate
2 - Drain
3 - Source
4 - Drain
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WE EK 35
LINE H
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBT
1 - Gate
2 - Coll ector
3 - Emitter
4 - Coll ector
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
C
eff. is a fixed capacitance that gives the same charging time
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 4.87mH
J
AS
≤ 22A, di/dt ≤ 190A/µs, V
= 22A. (See Figure 12a)
≤ V
DD
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
TJ ≤ 150°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
02/04
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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