Page 1
Trr
Absolute Maximum Ratings
I
T
Diode Characteristics
Units
)
PD - 95662
Document Number: 91205
www.vishay.com
1
IRFP17N50LPbF
Applications
SMPS MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity
I
@ TC = 25°C Continuous Drain Current, V
D
@ TC = 100°C Continuous Drain Current, VGS @ 10V
I
D
DM
@TC = 25°C
P
D
V
GS
dv/dt Peak Diode Recovery dv/dt
T
J
STG
.
Parameter Max. Units
@ 10V
GS
Pulsed Drain Current
Power Dissipation 220 W
Linear Derating Factor 1.8 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
c
e
V
DSSRDS(on)
500V
16
11 A
64
13 V/ns
10lbxin (1.1Nxm)
HEXFET® Power MOSFET
typ.
0.28
Ω 170ns 16A
typ.
TO-247AC
I
D
Symbol Parameter Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Conditions
Continuous Source Current ––– ––– 16 MOSFET symbol
(Body Diode) A showing the
Pulsed Source Current ––– ––– 64 integral reverse
(Body Diode)
Diode Forward Voltage ––– ––– 1.5 V
Reverse Recovery Time ––– 170 250 ns
Reverse Recovery Charge ––– 470 710 nC
Reverse Recovery Current ––– 7.3 11 A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD
c
––– 220 330
––– 810 1210
p-n junction diode.
T
= 25°C, IS = 16A, VGS = 0V
J
= 25°C, IF = 16A
T
J
T
= 125°C, di/dt = 100A/µs
J
= 25°C, IS = 16A, VGS = 0V
T
J
T
= 125°C, di/dt = 100A/µs
J
= 25°C
T
J
f
f
f
f
07/30/04
Page 2
IRFP17N50LPbF
V
V
/∆T
R
V
I
I
R
Q
Q
Q
t
t
t
t
C
C
C
C
VGS = 0V, V
= 1.0V, ƒ = 1.0MHz
C
VGS = 0V, V
= 400V, ƒ = 1.0MHz
C
eff.
C
eff. (ER)
EASSingle Pulse Avalanche Energy
d
IARAvalanche Current
c
EARRepetitive Avalanche Energy
c
R
R
R
Document Number: 91205
www.vishay.com
2
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
(BR)DSS
∆
DS(on)
GS(t h)
DSS
GSS
G
(BR)DSS
Drain-to-Source Breakdown Voltage 500 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C
J
Static Drain-to-Source On-Resistance ––– 0.28 0.32
Gate Threshold Voltage 3.0 ––– 5.0 V
Drain-to-Source Leakage Current ––– ––– 50 µA
––– ––– 2.0 mA
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Internal Gate Resistance ––– 1.4 –––
VGS = 0V, ID = 250µA
Reference to 25°C, I
V
Ω
GS
V
DS
V
DS
V
DS
V
GS
V
GS
Ω
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherw i s e spe cif ie d)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 11 ––– ––– S
g
gs
gd
d(on)
r
d(off)
f
iss
oss
rss
oss
oss
oss
oss
Total Gate Charge ––– ––– 130
Gate-to-Source Charge ––– ––– 33 nC
Gate-to-Drain ("Miller") Charge ––– ––– 59
Turn-On Delay Time ––– 21 –––
Rise Time ––– 51 ––– ns
Turn-Off Delay Time ––– 50 –––
Fall Time ––– 28 –––
Input Capacitance ––– 2760 –––
Output Capacitance ––– 325 –––
Reverse Transfer Capacitance ––– 37 –––
Output Capacitance ––– 3690 ––– pF
Output Capacitance ––– 84 –––
Effective Output Capacitance ––– 159 –––
Effective Output Capacitance ––– 120 –––
(Energy Related)
VDS = 50V, ID = 9.9A
= 16A
I
D
V
DS
V
GS
VDD = 250V
ID = 16A
R
G
V
GS
VGS = 0V
V
DS
ƒ = 1.0MHz, See Fig. 5
V
GS
Avalanche Characteristics
Symbol
Parameter Typ. Units
––– mJ
––– A
––– mJ
Thermal Resistance
Symbol Parameter Typ. Units
θJC
θCS
θJA
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
I
= 16A. (See Figure 12).
AS
I
= 16A, di/dt ≤ 347A/µs, V
SD
TJ ≤ 150°C.
Junction-to-Case –––
Case-to-Sink, Flat, Greased Surface 0.50 °C/W
Junction-to-Ambient ––– 62
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
= 25°C, L = 3.0mH, RG = 25Ω,
J
≤ V
DD
(BR)DSS
,
oss
as C
while V
oss
C
eff.(ER) is a fixed capacitance that stores the same energy
oss
as C
while VDS is rising from 0 to 80% V
oss
is rising from 0 to 80% V
DS
Conditions
= 1mA
D
= 10V, ID = 9.9A
f
= VGS, ID = 250µA
= 500V, VGS = 0V
= 400V, VGS = 0V, TJ = 125°C
= 30V
= -30V
Conditions
= 400V
= 10V, See Fig. 7 & 15
= 7.5Ω
= 10V, See Fig. 14a & 14b
= 25V
DS
DS
= 0V,VDS = 0V to 400V
Max.
390
16
22
Max.
0.56
–––
.
DSS
.
DSS
f
f
g
Page 3
IRFP17N50LPbF
Document Number: 91205
www.vishay.com
3
100
)
A
(
t
10
n
e
r
r
u
C
e
c
r
1
u
o
S
o
t
n
i
a
r
0.1
D
,
D
I
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100
°
T = 150 C
J
100
)
A
(
t
n
e
r
r
10
u
C
e
c
r
u
o
S
o
t
-
1
n
i
a
r
D
,
D
I
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
I =
D
16A
5.0V
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
Page 4
IRFP17N50LPbF
Document Number: 91205
www.vishay.com
4
100000
10000
)
F
p
(
e
c
n
a
t
i
1000
c
a
p
a
C
,
C
100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
C
C
iss
rss
oss
Ciss
Coss
ds
gd
Crss
10
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I =
16A
D
16
V = 400V
DS
V = 250V
DS
V = 100V
DS
SHORTED
20
15
)
J
µ
(
y
10
g
r
e
n
E
5
0
0 100 200 300 400 500 600
V
Drain-to-Source Voltage (V)
DS,
Fig 6. Typ. Output Capacitance
100
Stored Energy vs. V
°
T = 150 C
J
DS
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 30 60 90 120 150
Q , Total Gate Charge (nC)
G
Fig 7. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.6 0.9 1.3 1.6
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 8. Typical Source-Drain Diode
Forward Voltage
Page 5
IRFP17N50LPbF
V
9
1
V
+
-
Document Number: 91205
www.vishay.com
5
R
D.U.T.
D
V
DD
20
16
R
V
DS
V
GS
G
12
8
D
I , Drain Current (A)
4
Fig 10a. Switching Time Test Circuit
DS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0%
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
0%
GS
Fig 9. Maximum Drain Current Vs.
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
thJC
0.01
Thermal Response(Z )
0.001
0.20
0.1
0.10
0.05
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
P
DM
t
1
t
2
Notes:
1. Duty factor D =t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRFP17N50LPbF
A
I
S
Current Regulator
V
0
DS
Document Number: 91205
www.vishay.com
6
1000
OPERATION IN THIS AREA LIMITED
100
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 150 C
J
Single Pulse
0.1
10 100 1000 1000
BY R
DS(on)
10us
100us
1ms
10ms
°
V , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating
Area
15V
V
DS
L
DRIVER
800
TOP
640
480
320
160
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
t
p
I
D
7A
10A
16A
°
R
G
20V
D.U.T
I
AS
Ω
0.01
t
p
+
V
-
Fig 14a. Unclamped Inductive Test Circuit
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
D
-
I
D
Fig 15a. Gate Charge Test Circuit
DD
AS
Fig 14b. Unclamped Inductive Waveforms
Q
G
V
GS
Q
GS
Q
GD
G
Charge
Fig 15b. Basic Gate Charge Waveform
Page 7
IRFP17N50LPbF
R
V
+
-
Document Number: 91205
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
V
DD
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
e-Applied
oltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 16. For N-Channel HEXFET® Power MOSFETs
Page 8
IRFP17N50LPbF
0
Document Number: 91205
www.vishay.com
8
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
THIS IS AN IRFPE3 0
WITH AS SE MBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LI NE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
AS S EMB LY
LOT CODE
IRFPE30
035H
56 57
PART NUMBER
DATE CODE
YEAR 0 = 200
WEEK 35
LINE H
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
TAC Fax: (310) 252-7903
07/04
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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