PD - 94112
IRFP064V
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
D
R
DS(on)
V
DSS
= 60V
= 5.5mΩ
ID = 130A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
TO-247AC
mounting hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 95 A
I
DM
PD @TC = 25°C Power Dissipation 250 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.7 V/ns
T
J
T
STG
Pulsed Drain Current 520
Linear Derating Factor 1.7 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 130 A
Repetitive Avalanche Energy 25 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
www.irf.com 1
Junction-to-Case ––– 0.60
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
3/30/01
IRFP064V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 60 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.067 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance – –– ––– 5.5 mΩ VGS = 10V, ID = 78A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 88 ––– ––– S VDS = 25V, ID = 78A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 260 ID = 130A
Gate-to-Source Charge ––– ––– 68 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– – –– 94 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 26 ––– VDD = 30V
Rise Time ––– 200 ––– ID = 130A
Turn-Off Delay Time ––– 100 ––– RG = 4.3Ω
ns
Fall Time ––– 150 ––– VGS = 10V, See Fig. 10
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 6760 ––– VGS = 0V
Output Capacitance ––– 1330 ––– VDS = 25V
Reverse Transfer Capacitance ––– 29 0 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1880310 mJ I
= 130A, L = 37µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
130
520
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 130A, VGS = 0V
Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 130A
Reverse Recovery Charge ––– 360 540 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
= 25°C, L = 260µH
J
= 50A. (See Figure 12)
AS
≤ 130A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
,
junction temperature. Package limitation current is 90A.
= 175°C .
J
2 www.irf.com
D
S
IRFP064V
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
70A
I =
D
2.5
°
T = 175 C
J
100
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
www.irf.com 3
IRFP064V
12000
10000
8000
6000
4000
C, Capacitance(pF)
2000
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
gd
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
SHORTED
ds
20
I =
130A
D
V = 48V
DS
V = 30V
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 50 100 150 200 250 300
Q , Total Gate Charge (nC)
G
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
°
T = 175 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
1000
100
100µsec
10
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
1msec
10msec
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com
IRFP064V
140
LIMITED BY PACKAGE
120
100
80
60
D
40
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.20
0.1
0.10
0.05
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
IRFP064V
A
15V
DRIVER
R
V
G
20V
DS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
600
TOP
450
+
V
DD
-
300
150
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
I
D
53A
92A
130A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
6 www.irf.com
+
V
DS
-
IRFP064V
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
www.irf.com 7
IRFP064V
(
)
)
)
)
(
)
)
)
)
)
)
(
)
(
)
)
(
)
)
)
)
)
)
)
)
)
)
(
)
)
)
)
)
)
(
)
A
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- A -
5.50 (.217
2X
- C -
4.30
3.70 (.145
1.40 (.056
1.00 (.039
.010
0.25
3.65 (.143
3.55 (.140
0.25 (.010
5.50
4.50 (.177
.170
M
D
MM
.217
CA
S
20.30
.800
19.70 (.775
14.80 (.583
14.20 (.559
2.40 (.094
2.00 (.079
2X
5.45
.215
2X
15.90 (.626
15.30 (.602
- B -
1
23
3X
3.40 (.133
3.00 (.118
TO-247AC Part Marking Information
EX AM P L E : T H IS IS AN IR F P E 3 0
WITH A S S EM B L Y
L O T C O D E 3 A1 Q
INTERNATIONAL
R E C T IFIER
LO GO
ASSEMBLY
LOT CODE
B
- D -
5.30
4.70 (.185
2.50 (.089
1.50 (.059
4
NOTES:
0.80
3X
0.40 (.016
2.60 (.102
2.20 (.087
IRFPE30
3A1Q 9302
.209
1 DIMENSIONING & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO -2 4 7 -A C .
.031
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW WEEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8 www.irf.com
Loading...