Datasheet IRFNG40 Datasheet (International Rectifier)

Provisional Data Sheet No. PD-9.1555

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®

HEXFET

1000 Volt, 3.5

POWER MOSFET

ΩΩ

Ω HEXFET

ΩΩ

HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis­tors. The efficient geometry achieves very low on­state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es­tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.

The Surface Mount Device (SMD-1) package repre­sents another step in the continual evolution of sur­face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en­gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.

IRFNG40

N-CHANNEL

Product Summary

Part Number BVDSS RDS(on) ID

IRFNG40 1000V 3. 5Ω 3.9A

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

Absolute Maximum Ratings

Parameter IRFNG40 Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 3.9

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 2.5

I

DM

PD @ TC = 25°C Max. Power Dissipation 125 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 1.0

T

J

T

STG

Pulsed Drain Current ➀ 15.6

Linear Derating Factor 1.0 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 530 mJ
Avalanche Current ➀ 3.9 A
Repetitive Avalanche Energy ➀ 12.5 mJ

Operating Junction -55 to 150
Storage Temperature Range

Package Mounting Surface Temperature 300
Weight 2.6 (typical) g

(for 5 seconds)

A

V/ns

o

C

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 1000 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 1.4 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 3.5 VGS = 10V, ID = 2.5A
On-State Resistance — — 4.2 Ω VGS = 10V, ID = 3.9A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.3 — — S ( )VDS > 15V, IDS = 2.5A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 51 — 120 VGS =10V, ID = 3.9A
Gate-to-Source Charge 5.4 — 1 2 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 29 — 66 see figures 6 and 13
Turn-On Delay T ime — — 30 VDD = 500V, ID = 3.9A,
Rise Time — — 50 RG = 9.1Ω, VGS = 10V
Turn-Off Delay Time — — 170
Fall Time — — 50 see figure 10
Internal Drain Inductance — 2.0 —

Internal Source Inductance — 6.5 —

Input Capacitance — 1700 — VGS = 0V, VDS = 25V
Output Capacitance — 250 — f = 1.0 MHz
Reverse Transfer Capacitance — 100 — see figure 5

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 3.9 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ — — 15.6 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 3.9A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 1000 ns Tj = 25°C, IF = 3.9A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 5.6 µCV

RR

t

Forward Turn-On Time

on

Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJPCB

Junction-to-Case — — 1.0
Junction-to-PC Board — TBD — K/W Soldered to a copper clad PC board

A

≤ 50V ➃

DD

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Fig. 1 — Typical Output Characteristics

Fig. 3 — Typical Transfer Characteristics

T

C

= 25°C

Fig. 2 — Typical Output Characteristics

TC = 150°C

ID = 3.9A

Fig. 4 — Normalized On-Resistance Vs.Temperature

ID = 3.9A

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

10

1

D

I , Drain Current (A)I , Drain Current (A)

= 25 C°

C

°

T T= 150 C

J

Single Pulse

0.1
10 100 1000 10000

V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig. 8 — Maximum Safe Operating Area

Fig. 10a — Switching Time Test Circuit

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

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10

thJC

1

0.50

0.20

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

P

DM

1 2

J DM thJC C

t

1

t

2

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

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Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions — SMD-1

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.
(see figure 11)

➁ @ V

➂ I

= 50V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I
Peak IL = 3.9A, VGS = 10V, 25 ≤ RG ≤ 200Ω

≤ 3.9A, di/dt ≤ 100A/µs,

SD
VDD ≤ BV
Suggested RG = 2.35Ω

, TJ ≤ 150°C

DSS

2

) * [BV

L

DSS

/(BV

DSS-VDD

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W

W/K = W/°C

)]

All dimensions in millimeters (inches)

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http://www.irf.com/ Data and specifications subject to change without notice. 9/96

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