Datasheet IRFN340 Datasheet (International Rectifier)

Provisional Data Sheet No. PD-9.1550

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®

HEXFET

400 V olt, 0.55

POWER MOSFET

ΩΩ

Ω HEXFET

ΩΩ

HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi­cient geometry achieves very low on-state resistance com­bined with high transconductance.

HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param­eter temperature stability . They are well-suited for appli­cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.

The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology . The SMD-1 will give designers the extra flex­ibility they need to increase circuit board density . Inter­national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas­ing the size of the termination pads, thereby enhancing
thermal and electrical performance.

IRFN340

N-CHANNEL

Product Summary

Part Number BVDSS RDS(on) I D

IRFN340 400V 0.55Ω 10A

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

Absolute Maximum Ratings

ID @ VGS = 10V , TC = 25°C Continuous Drain Current 10

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 6

I

DM

PD @ TC = 25°C Max. Power Dissipation 125 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 4.0

T

J

T

STG

Parameter IRFN340 Units

A

Pulsed Drain Current ➀ 40

Linear Derating Factor 1.0 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 650 mJ
Avalanche Current ➀ 10 A
Repetitive Avalanche Energy ➀ 12.5 mJ

V/ns

Operating Junction -55 to 150
Storage Temperature Range

Package Mounting Surface Temperature 300
Weight 2.6 (typical) g

(for 5 seconds)

o

C

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source — — 0.55 VGS = 10V, ID = 6A
On-State Resistance — — 0.70 Ω VGS = 10V, ID = 10A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.9 — — S ( )VDS > 15V, IDS = 6A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 32 — 65 VGS =10V, ID = 10A
Gate-to-Source Charge 2 .2 — 10.0 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 13.8 — 40.5 see figures 6 and 13
Turn-On Delay Time — — 2.5 VDD = 200V , ID = 10A,
Rise Tim e — — 92 RG = 9.1Ω, VGS = 10V
Turn-Off Delay Time — — 79
Fall Time — — 58 see figure 10
Internal Drain Inductance — 2.0 —

Internal Source Inductance — 6 . 5 —

Input Capacitance — 1400 — VGS = 0V, VDS = 25V
Output Capacitance — 3500 — f = 1.0 MHz
Reverse Transfer Capacitance — 2300 — see figure 5

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 10 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ —— 40 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 1. 5 V Tj = 25°C, IS = 10A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 600 ns Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 5. 6 µCV

RR

t

Forward Turn-On Time

on

Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJ-PCB

Junction-to-Case — — 1.0
Junction-to-PC Board — TBD — K/W Soldered to a copper clad PC board

A

≤ 50V ➃

DD

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Fig. 1 — Typical Output Characteristics

Fig. 3 — Typical Transfer Characteristics

T

C

= 25°C

Fig. 2 — Typical Output Characteristics

TC = 150°C

ID = 10A

Fig. 4 — Normalized On-Resistance Vs.Temperature

ID = 10A

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

1000

I , Drain Current (A)I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

100

10

D

1

= 25 C°

C

T T= 150 C

J

Single Pulse

0.1
10 100 1000

V , Drain-to-Source Voltage (V)

DS

BY R

DS(on)

10us

100us

1ms

10ms

°

Fig. 8 — Maximum Safe Operating Area

Fig. 10a — Switching Time Test Circuit

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

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10

thJC

1

0.50

0.20

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T=P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit

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Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions — SMD-1

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.
(see figure 11)

➁ @ V

➂ I
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 50V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I
Peak IL = 10A, VGS = 10V, 25 ≤ RG ≤ 200Ω

≤ 10A, di/dt ≤ 120A/µs,

SD

VDD ≤ BV

, TJ ≤ 150°C

DSS

2

) * [BV

L

DSS

/(BV

DSS-VDD

➄ K/W = °C/W

W/K = W/°C

)]

All dimensions in millimeters (inches)

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