Datasheet irfm9240 Datasheet

POWER MOSFET
THRU-HOLE (TO-254AA)

Product Summary

Part Number RDS(on) ID

IRFM9240 0.51Ω -11A

PD - 90497E

IRFM9240

JANTX2N7237

JANTXV2N7237

REF:MIL-PRF-19500/595

200V, P-CHANNEL

HEXFET

®

MOSFET TECHNOLOGY

HEXFET

Rectifier’s advanced line of power MOSFET tr ansistors. The
efficient geometry design achieves very low on-state resis­tance combined with high transconductance. HEXFET tran­sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability . They are well-suited f or applications such as switch­ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The

HEXFET transistor’s totally isolated pac kage eliminates the

need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.

®

MOSFET technology is the key to International

TO-254AA

Features:

n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current -11

ID @ VGS = -10V, TC = 100°C Continuous Drain Current -7.0

I

DM

PD @ TC = 25°C Max. Power Dissipation 125 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ -5.0

T

J

T

STG

Pulsed Drain Current ➀ -44

Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ -11 A
Repetitive Avalanche Energy ➀ 12.5 mJ

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature
Weight 9.3 (typical) g

300 ( 0.063 in.(1.6mm) from case for 10s)

A

V/ns

o

C

For footnotes refer to the last page

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02/06/02

IRFM9240

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV
∆BV

R

V
g
I

I
I
Q
Q
Q
t
t
t

t

L

C
C
C

DSS

GSS
GSS

d(on)
r
d(off)
f

DSS

DSS

DS(on)

GS(th)

fs

g
gs
gd

S + LD

iss

oss
rss

Drain-to-Source Breakdown V oltage -200 — — V VGS = 0V, ID = -1.0mA

/∆TJTemperature Coefficient of Breakdown — -0.2 — V/°C Reference to 25°C, ID = -1.0mA

Voltage
Static Drain-to-Source On-State — — 0.51 VGS = -10V, ID = -7.0A➃
Resistance — — 0.52 VGS = -10V, ID = -11A ➃
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 4.0 — — S ( ) VDS > -15V, IDS = -7.0A➃
Zero Gate Voltage Drain Current — — - 25 VDS= -160V, VGS= 0V

— — -250 VDS = -160V

Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS =20V
Total Gate Charge — — 60 VGS = -10V, ID= -11A
Gate-to-Source Charge — — 15 nC VDS = -100V
Gate-to-Drain (‘Miller’) Charge — — 3 8
Turn-On Delay Time — — 35 VDD = -100V, ID = -11A,
Rise Time — — 85 RG =9.1Ω, VGS = -10V
Turn-Off Delay Time — — 85
Fall Time — — 65
Total Inductance — 6.8 —

Input Capacitance — 1200 VGS = 0V, VDS = -25V
Output Capacitance — 570 — pF f = 1.0MHz
Reverse Transfer Capacitance — 81 —

Ω

Ω

µA

VGS = 0V, TJ = 125°C

nA

ns

nH

Measured from drain lead (6mm/

0.25in. from package) to source lead
(6mm/0.25in. from package)

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — -1 1

S

I

Pulse Source Current (Body Diode) ➀ — — -44

SM

V

Diode Forward Voltage — — -4.6 V Tj = 25°C, IS = -11A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 440 nS Tj = 25°C, IF = -11A, di/dt ≤-100A/µs

rr

Q

Reverse Recovery Charge — — 7.2 µ c VDD ≤ -50V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thCS

R

thJA

For footnotes refer to the last page

2 www.irf.com

Junction-to-Case — — 1.0
Case-to-sink — 0.21 —
Junction-to-Ambient — — 48 Typical socket mount

°C/W

+ LD.

IRFM9240

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFM9240

13a & b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

4 www.irf.com

IRFM9240

R

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

D

D.U.T.

-

+

V

DD

Fig 9. Maximum Drain Current Vs.

Case Temperature

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFM9240

(BR)

L

D.U.T

I

AS

0.01

t

p

DRIVER

Ω

15V

V

DD

R

-10V

-20V

V

DS

G

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

Fig 12b. Unclamped Inductive Waveforms

A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

-10V

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

-3mA

Current Sampling Resistors

­V

DS

D.U.T.

I

G

+

I

D

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IRFM9240

Foot Notes:

➀ Repetitive Rating; Pulse width limited by

➂ I

maximum junction temperature.

➁ V

=-50V, starting TJ = 25°C, L = 8.3mH

DD

Peak IL = -11A, V

GS

= -10V

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — TO-254AA

3.78 [.149]

3.53 [.139]
A

17.40 [.685]

16.89 [.665]

123

C

3.81 [.150]
2X

NOTES:

1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: INCH.
4 . CONFORMS TO JEDEC OUTLINE TO-254AA.

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

1.14 [.045]
3X

0.89 [.035]

0.36 [.014] B A

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

0.84 [.033]
MAX.

3.81 [.150]

22.73 [.895]

21.21 [.835]

3.78 [.149]

3.53 [.139]

≤ -11A, di/dt ≤ −150A/µs,

SD

VDD≤ -200V, TJ ≤ 150°C

13.84 [.545]

123

13.59 [.535]

20.32 [.800]

20.07 [.790]

1.14 [.04 5 ]
3X

0.89 [.03 5 ]

0.36 [.014]

A

17.40 [.685]

16.89 [.665]

4.82 [.190]

3.81 [.150]

3.81 [.150]
2X

PIN ASS IGNMENT S

1 = DRAIN
2 = SOURCE
3 = G ATE

BA

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

BERYLLIA WARNING PER MIL-PRF-19500

CAUTION

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/02

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